BT152 PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Thyristors BT152 series GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated thyristors in a plasticSYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT152- 400R 600R 800R bidirectional blocking voltage V DRM , Repetitive peak off-state 450 650 800 V capability and high thermal cycling VRRM voltages performance. Typical applications IT(AV) Average on-state current 13 13 13 A include motor control, industrial and IT(RMS) RMS on-state current 20 20 20 A domestic lighting, heating and static ITSM Non-repetitive peak on-state 200 200 200 A switching. current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -400R -600R -800R VDRM Repetitive peak off-state - 450 1 6501 800 V voltages IT(AV) Average on-state current half sine wave; Tmb ≤ 103 ˚C - 13 A IT(RMS) RMS on-state current all conduction angles - 20 A ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C prior to on-state current surge t = 10 ms - 200 A t = 8.3 ms - 220 A I 2tI 2t for fusing t = 10 ms - 200 A 2s dIT/dt Repetitive rate of rise of ITM = 50 A; IG = 0.2 A; - 200 A/ µs on-state current after dIG /dt = 0.2 A/µs triggering IGM Peak gate current - 5 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 20 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature ak g12 3 tab 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. March 1997 1 Rev 1.200

Philips Semiconductors Product specification Thyristors BT152 series THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance - - 1.1 K/W junction to mounting base R th j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 3 32 mA IL Latching current V D = 12 V; IGT = 0.1 A - 25 80 mA IH Holding current V D = 12 V; IGT = 0.1 A - 15 60 mA VT On-state voltage I T = 40 A - 1.4 1.75 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.6 1.5 V VD = VDRM(max) ; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID , IR Off-state leakage current VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 ˚C - 0.2 1.0 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; 200 300 - V/ µs off-state voltage exponential waveform gate open circuit tgt Gate controlled turn-on VD = VDRM(max) ; IG = 0.1 A; dIG /dt = 5 A/µs; - 2 - µs time I TM = 40 A tq Circuit commutated V D = 67% VDRM(max) ; Tj = 125 ˚C; - 70 - µs turn-off time I TM = 50 A; VR = 25 V; dITM /dt = 30 A/µs; dVD /dt = 50 V/µs; RGK = 100 Ω March 1997 2 Rev 1.200

Philips Semiconductors Product specification Thyristors BT152 series Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS) / IT(AV). Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb . Fig.4. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 103˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0 5 10 150 a = 1.57 1.9 2.2 2.8 BT152 IT(AV) / A Ptot / W Tmb(max) / C 125 119.5 114 108.5 103 97.5 conduction angle form factor degrees 120 180 2.8 2.2 1.9 1.57 a 1 10 100 10000 100 150 200 250 BT152 Number of half cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T 100

1000 BT152

I Tj initial = 25 C max T dI /dt limitT 0.01 0.1 1 100 BT152 surge duration / s IT(RMS) / A -50 0 50 100 1500 BT152 Tmb / C IT(RMS) / A 103 C -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT151 Tj / C VGT(Tj) VGT(25 C) March 1997 3 Rev 1.200

Philips Semiconductors Product specification Thyristors BT152 series Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5

3 BT152

IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 typ BT152 VT / V IT / A max Tj = 125 C Tj = 25 C Vo = 1.12 V Rs = 0.015 ohms -50 0 50 100 1500 0.5 1.5 2.5

3 BT145

IL(Tj) IL(25 C) 0.001 0.01 0.1

10 BT152

Zth j-mb (K/W) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tpP t D -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25 C) 0 50 100 15010 100 1000 10000 Tj / C dVD/dt (V/us) gate open circuit RGK = 100 Ohms March 1997 4 Rev 1.200

Philips Semiconductors Product specification Thyristors BT152 series MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.13. TO220AB; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,03,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min March 1997 5 Rev 1.200

Philips Semiconductors Product specification Thyristors BT152 series DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. March 1997 6 Rev 1.200