BT151X PHILIPS | Alldatasheet
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Technical content
- Product profile
1.1 General description
Passivated thyristors in a SOT186A full pack plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
- Pinning information BT151X series Thyristors Rev. 04 — 9 June 2004 Product data sheet ■ High thermal cycling performance ■ Isolated mounting base. ■ High bidirectional blocking voltage capability ■ Motor control ■ Industrial and domestic lighting, heating and static switching. ■ VDRM , VRRM ≤ 800 V (BT151X-800) ■ IT(RMS) ≤ 12 A ■ VDRM , VRRM ≤ 650 V (BT151X-650) ■ IT(AV)≤ 7.5 A ■ VDRM , VRRM ≤ 500 V (BT151X-500) ■ ITSM ≤ 120 A. Table 1: Discrete pinning Pin Description Simplified outline Symbol 1 cathode (k) SOT186A (TO-220) 2 anode (a) 3 gate (g) mb mounting base; isolated mb sym037
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 2 of 11 Philips Semiconductors BT151X series Thyristors 3. Ordering information 4. Limiting values [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. Table 2: Ordering information Type number Package Name Description Version BT151X-500 - plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 ‘full pack’ SOT186A BT151X-650 BT151X-800 Table 3: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit VDRM , VRRM repetitive peak off-state voltage BT151X-500 [1] - 500 V BT151X-650 [1] - 650 V BT151X-800 - 800 V IT(AV) average on-state current half sinewave; Ths ≤ 69 °C; Figure1 - 7.5 A IT(RMS) RMS on-state current all conduction angles; Figure4 andFigure5 -1 2 A ITSM non-repetitive peak on-state current half sinewave; Tj=2 5°C prior to surge;Figure2 and Figure3 t=1 0m s - 1 2 0 A t = 8.3 ms - 132 A I 2tI 2t for fusing t = 10 ms - 72 A 2s dIT/dt repetitive rate of rise of on-state current after triggering ITM =2 0A ;IG =5 0m A ; dIG /dt 50 mA/µs -5 0 A / µs IGM peak gate current - 2 A VRGM peak reverse gate voltage - 5 V PGM peak gate power - 5 W PG(AV) average gate power over any 20 ms period - 0.5 W Tstg storage temperature −40 +150 °C Tj junction temperature - 125 °C
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 3 of 11 Philips Semiconductors BT151X series Thyristors a = form factor = IT(RMS) /IT(AV). Fig 1. Total power dissipation as a function of average on-state current; maximum values. f = 50 Hz. Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values. IT(AV) (A) 0 8642 001aaa961 P tot (W) 102.5 57.5 T hs(max) (°C) 125 a = 1.57 2.8 2.2 1.9 conduction angle (degrees) form factor a 120 180 2.8 2.2 1.9 1.57 a 001aaa957 120 160 ITSM (A) n1 10310210 tp Tj initial = 25 °C max IT ITSM t
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 4 of 11 Philips Semiconductors BT151X series Thyristors tp ≤ 10 ms. Fig 3. Non-repetitive peak on-state current as a function of pulse width; maximum values. f = 50 Hz; Ths ≤ 87 °C. Fig 4. RMS on-state current as a function of surge duration; maximum values. Fig 5. RMS on-state current as a function of heatsink temperature; maximum values. 001aaa956 tp (s) 10−5 10−210−310−4 102 103 ITSM (A) dlT/dt limit tp Tj initial = 25 °C max IT ITSM t surge duration (s) 10−2 10110−1 001aaa955 IT(RMS) (A) Ths (°C) −50 150 10005 0 001aaa960 IT(RMS) (A)
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 5 of 11 Philips Semiconductors BT151X series Thyristors 5. Thermal characteristics 6. Isolation characteristics Table 4: Thermal characteristics Symbol Parameter Conditions Typ Max Unit R th(j-hs) thermal resistance from junction to heatsink Figure6 with heatsink compound - 4.5 K/W without heatsink compound - 6.5 K/W R th(j-a) thermal resistance from junction to ambient in free air 55 - K/W (1) Without heatsink compound. (2) With heatsink compound. Fig 6. Transient thermal impedance as a function of pulse width. 001aaa964 10-1 10-2 Zth(j-hs) (K/W) 10-3 tp (s) 10-5 11 010-110-210-4 10-3 tp tp T P t Td = (2) (1) Table 5: Isolation limiting values and characteristics Ths =2 5°C unless otherwise specified Symbol Parameter Conditions Typ Max Unit Visol RMS isolation voltage from all three terminals to external heatsink f = 50 to 60 Hz; sinusoidal waveform; R.H.≤ 65%; clean and dust free - 2500 V C isol capacitance from pin 2 to external heatsink f = 1 MHz 10 - pF
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 6 of 11 Philips Semiconductors BT151X series Thyristors 7. Characteristics Table 6: Characteristics Tj=2 5°C unless otherwise stated Symbol Parameter Conditions Min Typ Max Unit Static characteristics I GT gate trigger current VD = 12 V; IT = 0.1 A;Figure8 - 2 15 mA IL latching current V D = 12 V; IGT = 0.1 A;Figure10 - 1 04 0m A IH holding current V D = 12 V; IGT = 0.1 A;Figure11 - 7 20 mA VT on-state voltage I T =2 3A ;Figure9 - 1.4 1.75 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A;Figure7 - 0.6 1.5 V VD =V DRM(max) ; IT = 0.1 A; Tj= 125°C 0.25 0.4 - V ID , IR off-state leakage current VD =V DRM(max) ; VR =V RRM(max) ; Tj= 125°C - 0.1 0.5 mA Dynamic characteristics dVD /dt critical rate of rise of off-state voltage VDM = 67% VDRM(max) ;Tj= 125°C; exponential waveform;Figure12 gate open circuit 50 130 - V/ µs R GK = 100Ω 200 1000 - V/ µs tgt gate controlled turn-on time ITM = 40 A; VD =V DRM(max) ; IG = 0.1 A; dIG /dt = 5 A/µs -2 - µs tq circuit commuted turn-on time VD = 67% VDRM(max) ; Tj= 125°C; ITM = 20 A; VR =2 5V ; dITM / d t=3 0A /µs; dVD / d t=5 0V /µs; RGK = 100Ω -7 0 - µs Fig 7. Normalized gate trigger voltage as a function of junction temperature. Fig 8. Normalized gate trigger current as a function of junction temperature. Tj (°C) −50 150 10005 0 001aaa953 0.8 1.2 1.6 V GT (Tj) VGT (25 °C) 0.4 Tj (°C) −50 150 10005 0 001aaa952 I GT (Tj) IGT (25 °C)
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 7 of 11 Philips Semiconductors BT151X series Thyristors 8. Package information Epoxy meets requirements of UL94 V-0 at1⁄8 inch. VO = 1.06 V. R S = 0.0304Ω . (1) Tj= 125°C; typical values. (2) Tj= 125°C; maximum values. (3) Tj=2 5°C; maximum values. Fig 9. On-state current characteristics. Fig 10. Normalized latching current as a function of junction temperature. (1) RGK = 100Ω . (2) Gate open circuit. Fig 11. Normalized holding current as a function of junction temperature. Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values. VT (V) 02 1.50.5 1 001aaa959 I T (A) (3)(2)(1) Tj (°C) −50 150 10005 0 001aaa951 I L (Tj) IL (25 °C) Tj (°C) −50 150 10005 0 001aaa950 I H (Tj) IH (25 °C) 001aaa949 103 102 104 dVD /dt (V/ms) Tj (°C) 0 150 10050 (2) (1)
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 8 of 11 Philips Semiconductors BT151X series Thyristors 9. Package outline Fig 13. Package outline. REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT186A 3-lead TO-220F 0 5 10 mm scale Plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3 lead TO-220 'full pack' SOT186A A Q c K j Notes 1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned. 2. Both recesses are ˘ 2.5 · 0.8 max. depth D D 1 L L2 L1 e b w M 1 23 q E P T UNIT Db1 D 1 e qQPLc L2 (1) max. e1A 5.08 3mm 4.6 4.0 A 1 2.9 2.5 b 0.9 0.7 1.1 0.9 1.4 1.0 0.7 0.4 15.8 15.2 6.5 6.3 E 10.3 9.7 2.54 14.4 13.5 T(2) 2.5 0.4 3.30 2.79 j 2.7 1.7 K 0.6 0.4 2.6 2.3 3.0 2.6 w 3.2 3.0 DIMENSIONS (mm are the original dimensions) 02-03-12 02-04-09 mounting base
9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 9 of 11 Philips Semiconductors BT151X series Thyristors 10. Revision history Table 7: Revision history Document ID Release date Data sheet status Change notice Order number Supersedes BT151X_SERIES_4 20040609 Product specification - 9397 750 13162 BT151X_SERIES_3 Modifications:
- The format of this specification has be redesigned to comply with Philips Semiconductors’ new presentation and information standard BT151X_SERIES_3 20030901 Product specification - - BT151X_SERIES_2 BT151X_SERIES_2 19990601 Product specification - - BT151X_SERIES_1 BT151X_SERIES_1 19970901 Product specification - - -
Philips Semiconductors BT151X series Thyristors 9397 750 13162 © Koninklijke Philips Electronics N.V. 2004. All rights reserved. Product data sheet Rev. 04 — 9 June 2004 10 of 11 11. Data sheet status [1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. [3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 12. Definitions Short-form specification —The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Limiting values definition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 13. Disclaimers Life support —These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Right to make changes —Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. 14. Contact information For additional information, please visit: http://www.semiconductors.philips.com For sales office addresses, send an email to: sales.addresses@www.semiconductors.philips.com Level Data sheet status[1] Product status[2][3] Definition I Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN).
© Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Date of release: 9 June 2004 Document order number: 9397 750 13162 Published in The Netherlands Philips Semiconductors BT151X series Thyristors 15. Contents