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Product specification August 2018 DISCRETE SEMICONDUCTORS BT151U series C Thyristors
WeEn Semiconductors /g3Product specification Thyristors BT151U series C GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT151U- 500C 650C 800C bidirectional blocking voltage V DRM, Repetitive peak off-state 500 650 800 V capability and high thermal cycling V RRM voltages performance. Typical applications I T(AV) Average on-state current 7.5 7.5 7.5 A include motor control, industrial I T(RMS) RMS on-state current 12 12 12 A and domestic lighting, heating and I TSM Non-repetitive peak 100 100 100 A static switching. on-state current PINNING - SOT533, (I-PAK) PIN CONFIGURATION SYMBOL PIN DESCRIPTION NUMBER 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500C -650C -800C VDRM, VRRM Repetitive peak off-state - 500 1 6501 800 V voltages IT(AV) Average on-state current half sine wave; T mb ≤ 104 ˚C - 7.5 A IT(RMS) RMS on-state current all conduction angles - 12 A ITSM Non-repetitive peak half sine wave; T j = 25 ˚C prior to on-state current surge t = 10 ms - 100 A t = 8.3 ms - 110 A I 2tI 2t for fusing t = 10 ms - 50 A2s dIT/dt Repetitive rate of rise of I TM = 20 A; IG = 50 mA; - 50 A/μs on-state current after dI G/dt = 50 mA/μs triggering IGM Peak gate current - 2 A VRGM Peak reverse gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Junction temperature - 125 ˚C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μ August 2018 1 Rev 1.100 mb 1 2 3 IPAK (TO-251) sym037 A K G
WeEn Semiconductors /g3Product specification Thyristors BT151U series C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance - - 1.3 K/W junction to mounting base K/W Rth j-a Thermal resistance in free air - 70 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current V D = 12 V; IT = 0.1 A - 2 15 mA IL Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA IH Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA VT On-state voltage IT = 23 A - 1.44 1.75 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.6 1.5 V VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID, IR Off-state leakage current V D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; off-state voltage exponential waveform Gate open circuit 50 130 - V/μs RGK = 100 Ω 200 1000 - V/μs tgt Gate controlled turn-on I TM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs time dIG/dt = 5 A/μs tq Circuit commutated V D = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs turn-off time ITM = 20 A; VR = 25 V; dITM/dt = 30 A/μs; dVD/dt = 50 V/μs; RGK = 100 Ω August 2018 2 Rev 1.100
WeEn Semiconductors /g3Product specification Thyristors BT151U series C Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 100 ˚C. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 024680 1.9 2.2 2.8 IT(AV) (A) Ptot (W) Tmb(max) (°C) 125 118.5 112 105.5 30 4 conduction angle form 60˚ 90˚ 120˚ 180˚ (a) 2.8 2.2 1.9 1.57 factor (α) 30˚ 4.0 α a = 1.57 1 10 100 10000 100 120 Number of half cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T 100 1000 10us 100us 1ms 10ms T / s ITSM / A T ITSM time I Tj initial = 25 C max T dI /dt limitT 0.01 0.1 1 100 surge duration / s IT(RMS) / A -50 0 50 100 150 Tmb (°C) IT(RMS) 104 ˚C(A) -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 Tj / C VGT(Tj) VGT(25 C) August 2018 3 Rev 1.100
WeEn Semiconductors /g3/g3/g3Product specification Thyristors BT151U series C Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 VT (V) IT typ max (A) Vo = 1.06 V Rs = 0.0304 ohms Tj = 125 °C Tj = 25 °C -50 0 50 100 1500 0.5 1.5 2.5
3 BT145
IL(Tj) IL(25 C) 0.001 0.01 0.1 tp (s) Zth(j-mb) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tpP t D (K/W) -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IH(Tj) IH(25 C) 0 50 100 15010 100 1000 10000 Tj / C dVD/dt (V/us) gate open circuit RGK = 100 Ohms August 2018 4 Rev 1.100
WeEn Semiconductors /g3Product specification Thyristors BT151U series C MECHANICAL DATA August 2018 5 Rev 1.100 REFERENCESO UTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT533 TO-251 SOT533 05-02-11 06-02-14 DIMENSIONS (mm are the original dimensions) Plastic single-ended package (IPAK); 3 leads (in-line) E 1 2 3 L A b c Q e w M mounting b ase 0 2 .5 5 mm scale UNIT m m 0.93 0.46 0.89 0.71 0.56 0.46 6.22 5.98 6.73 6.47 2.285 BSC(1) 4.57 BSC(1) 9.6 9.2 2.38 2.22 A b c D 2 E e e1 .21 5.00 1.10 0.96 L1( 2) max 2.7 0.3 L w 1.1 1.0 Q Notes . Basic spacing between centers. 2. Terminal dimensions are uncontrolled within zone L1.
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