BT151S-800R

BT151S-500R LUGUANG | Alldatasheet

Document overview

• Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
• PDF pages: 5

Technical content

12A Silicon Controlled Rectifiers http://www.lgesemi.com Revision:20240716-P1 m a i l : l g e @ l g e s e m i . c o m Features: ◇Single side grooving technology with independent Intellectualproperty rights,table glass passivation Technology; ◇Multi-layer metallized electrode; ◇High blocking voltage and high temperature stability.

Applications

It is widely used in the fields of lighting, temperature adjustment, speed regulation, electric tools,massager, solid -state relay,washing machine, vacuum cleaners, AC motor speed regulation and so on. Mechanical Data ◇ Moisture Sensitivity: MSL Level 1,per J-STD-020 ◇ Terminals:Matte Tin Finish. Solderable per MIL-STD-202 Method 208 ◇ Case Material：Molded Plastic; ◇ Molding compound meet UL Flammability ClassificationRating 94V-0 ◇ Case:JEDEC TO-252 MAXIMUM RATING Ratings at 25℃ ambient tepmerature unless otherwise specified. PARAMETER SYMBOL VALUE UNITS R.M.S. On-State Current Tc=105 ℃ IT(RMS) 12 A On-State average current Tc=105 ℃ IT(AV) 7.5A A Non-Repetitive Surge Peak On-State Current(Full Cycle,Tj initial=25℃) F=50HZ T=10ms I TSM 120 A F=60HZ T=8.3ms 132 I2t Value for Fusing tp=10ms I 2t 72 A 2s Critical Rate of Rise of On-State Current F=120HZ Tj=125 ℃ di/dt 50 A/ μs Repetitive peak Off-State voltage Tj=25 ℃ V DRM/VRRM 500/600/800 V Non repetitive surge peak off-state voltage tp=10ms Tj=25 ℃ V DSM/VRSM V DRM/VRRM+100 V Peak Gate Current tp=20μs Tj=125 ℃ I GM 5 A Peak Gate Current tp=20μs Tj=125 ℃ V GM 5.0 V Peak Gate Power Dissipation Tj=125 ℃ P GM 20 W Average Gate Power Dissipation Tj=125 ℃ P G(AV) 1.0 W Typical Thermal Resistance(Junction to Ambient) TO-252 R ΘJA 55 ℃/W Typical Thermal Resistance(Junction to Case (AC)) TO-252 R ΘJC 1.1 ℃/W Operating Junction temperature T J -40~+125 ℃ Storage temperature range TSTG -40~+150 ℃ TO-252

12A Silicon Controlled Rectifiers http://www.lgesemi.com Revision:20240716-P2 m a i l : l g e @ l g e s e m i . c o m ELECTRICAL CHARACTERISTICS(Tj=25℃ unless otherwise specified) PARAMETER TEST CONDITIONS SYMBOL VALUE UNITS Gate Trigger Current V D=12V,IT=0.1A IGT MAX 15 mA Gate Trigger Voltage V D=12V,RL=30Ω V GT M A X 1 . 5 V Gate Non-Trigger Voltage V D=VDRM,Tj=125℃, RL=3.3KΩ,RGK=1KΩ VGD M I N 0.25 V Holding Current I T=0.1A IH M A X 2 0 m A Latching Current I T=1.2IGT IL M A X 40 mA Critical rate of rise of on-state current Tj=125℃,IG=2×IGT, tr≤100ns di/dt MIN 50 A/μs Critical Rate of Rise of Off-State Voltage VD=2/3VDRM,Tj=125℃ dv/dt MIN 500 V/ μs Critical Rate of Rise of Off-State Voltage at Commutation, Tj=125℃ (dv/dt)c MIN 10 V/μs STATIC CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL VALUE UNITS Peak On-State Voltage IT=23A,tp=380μs V TM M A X 1 . 7 V Threshold Voltage Tj=125℃ V TO MAX 0.87 V Dynamic Resistance Tj=125℃ Rd MAX 36.6 mΩ Repetitive Peak Off-State Curren VD =VDRM Tj=25℃ IDRM M A X 10 μA Tj=125℃ 1 mA Repetitive Peak Off-State Curren VR=VRRM Tj=25℃ IRRM M A X 10 μA Tj=125℃ 1 mA RATING AND CHARACTERISTICS CURVES IT(AV) (A) 0 8642 Ptot (W) 2.8 2.2 1.9 a = 1.57 α Tmb(max) (°C) 125 105.5 108.8 115.3 121.8 118.5 112.0 conduction angle (degrees) form factor a 120 180 2.8 2.2 1.9 1.57 α Fig. 1. Total power dissipation as a function of average on-state current; maximum values

12A Silicon Controlled Rectifiers http://www.lgesemi.com Revision:20240716-P3 m a i l : l g e @ l g e s e m i . c o m RATING AND CHARACTERISTICS CURVES Tmb (°C) - 50 1501000 50 IT(RMS) (A) Fig. 2. RMS on-state current as a function of mounting base temperature; maximum values surge duration (s) 10- 2 10110- 1 IT(RMS) (A) Fig. 3. RMS on-state current as a function of surge duration; maximum values 001aaa956 tp (s) 10- 5 10- 210- 310- 4 102 103 ITSM (A) dlT/dt limit tp Tj initial = 25 °C max IT ITSM t Fig. 4. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values 10-1 10-2 Zth(j-mb) (K/W) 10-3 tp (s) 10-5 1 1010-110-210-4 10-3 Fig. 6. Transient thermal impedance from junction to mounting base as a function of pulse width 120 160 ITSM (A) number of cycles1 10310210 tp Tj initial = 25 °C max IT ITSM t Fig. 5. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values

12A Silicon Controlled Rectifiers http://www.lgesemi.com Revision:20240716-P4 m a i l : l g e @ l g e s e m i . c o m RATING AND CHARACTERISTICS CURVES Tj (°C) - 50 1501000 50 IGT IGT(25°C) Fig. 7. Normalized gate trigger current as a function of junction temperature Tj (°C) - 50 1501000 50 IL IL(25°C) Fig. 8. Normalized latching current as a function of junction temperature Tj (°C) - 50 1501000 50 IH IH(25°C) Fig. 9. Normalized holding current as a function of junction temperature VT (V) 0 21.50.5 1 IT (A) (3)(2)(1) Vo = 1.06 V; Rs = 0.0304 Ω (1) Tj = 125 °C; typical values (2) Tj = 125 °C; maximum values (3) Tj = 25 °C; maximum values Fig. 10. On-state current as a function of on-state voltage 001aaa949 103 102 104 dVD/dt (V/µs) Tj (°C) 0 15010050 (2) (1) (1) RGK = 100 Ω; (2) gate open circuit Fig. 11. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values Tj (°C) - 50 1501000 50 001aaa953 0.8 1.2 1.6 0.4 VGT VGT(25°C) Fig. 12. Normalized gate trigger voltage as a function of junction temperature

12A Silicon Controlled Rectifiers http://www.lgesemi.com Revision:20240716-P5 m a i l : l g e @ l g e s e m i . c o m PACKAGE OUTLINE DIMENSIONS TO-252

Ordering Information

151=12A Package TO-252 Voltage 500=600V 800=800V Sensitivity and Type I G T = 1 5 m A