BT151S NXP | Alldatasheet
Document overview
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Technical content
1.1 General description
Passivated thyristors in a SOT428 plastic package.
1.2 Features
1.3 Applications
1.4 Quick reference data
Table 1. Pinning
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. [1] Although not recommended, off-state voltages up to 800 V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/µs. Table 2. Ordering information Table 3. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 3 of 13 NXP Semiconductors BT151S series L and R Thyristors Form factor a = IT(RMS) /IT(AV) Fig 1. Total power dissipation as a function of average on-state current; maximum values f = 50 Hz Fig 2. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values IT(AV) (A) 0 8642 001aab019 P tot (W) 116 107 T mb(max) (°C) 125 a = 1.57 2.8 2.2 1.9 conduction angle (degrees) form factor a 120 180 2.8 2.2 1.9 1.57 α 001aaa957 120 160 ITSM (A) n1 10310210 tp Tj initial = 25 °C max IT ITSM t
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 4 of 13 NXP Semiconductors BT151S series L and R Thyristors tp ≤ 10 ms Fig 3. Non-repetitive peak on-state current as a function of pulse width for sinusoidal currents; maximum values f = 50 Hz; Tmb ≤ 103 °C Fig 4. RMS on-state current as a function of surge duration; maximum values Fig 5. RMS on-state current as a function of mounting base temperature; maximum values 001aaa956 tp (s) 10−5 10−210−310−4 102 103 ITSM (A) dlT/dt limit tp Tj initial = 25 °C max IT ITSM t surge duration (s) 10−2 10110−1 001aaa954 IT(RMS) (A) Tmb (°C) −50 150 10005 0 001aaa998 IT(RMS) (A)
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Table 4. Thermal characteristics
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Table 5. Characteristics Tj = 25°C unless otherwise stated.
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 7 of 13 NXP Semiconductors BT151S series L and R Thyristors Fig 7. Normalized gate trigger voltage as a function of junction temperature Fig 8. Normalized gate trigger current as a function of junction temperature Vo = 1.06 V R s = 0.0304Ω (1) Tj= 125°C; typical values (2) Tj= 125°C; maximum values (3) Tj=2 5°C; maximum values Fig 9. On-state current as a function of on-state voltage Fig 10. Normalized latching current as a function of junction temperature Tj (°C) −50 150 10005 0 001aaa953 0.8 1.2 1.6 0.4 V GT VGT(25°C) Tj (°C) −50 150 10005 0 001aaa952 IGT IGT(25°C) VT (V) 02 1.50.5 1 001aaa959 I T (A) (3)(2)(1) Tj (°C) −50 150 10005 0 001aaa951 IL IL(25°C)
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 8 of 13 NXP Semiconductors BT151S series L and R Thyristors (1) RGK = 100Ω (2) Gate open circuit Fig 11. Normalized holding current as a function of junction temperature Fig 12. Critical rate of rise of off-state voltage as a function of junction temperature; minimum values Tj (°C) −50 150 10005 0 001aaa950 I H IH(25°C) 001aaa949 103 102 104 dVD /dt (V/ms) Tj (°C) 0 150 10050 (2) (1)
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 9 of 13 NXP Semiconductors BT151S series L and R Thyristors 7. Package outline Fig 13. Package outline SOT428 (DPAK) REFERENCESOUTLINE VERSION EUROPEAN PROJECTION ISSUE DATE IEC JEDEC JEITA SOT428 SC-63 TO-252 SOT428 06-02-14 06-03-16 DIMENSIONS (mm are the original dimensions) Plastic single-ended surface-mounted package (DPAK); 3 leads (one lead cropped) A D 2 D 1 H D L e mounting base wAMb E b1 c y 0 5 10 mm scale UNIT mm 0.93 0.46 5.46 5.00 0.56 0.20 6.22 5.98 6.73 6.47 10.4 9.6 2.95 2.55 A 1 2.38 2.22 Ab 2 1.1 0.9 b1 e1 0.89 0.71 bc D 1 0.9 0.5 L2Ee 2.285 4.574.0 D 2 min 4.45 E 1 min 0.5 minH D Lw 0.2 y max 0.2 A
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 10 of 13 NXP Semiconductors BT151S series L and R Thyristors 8. Mounting Plastic meets requirements of UL94 V-O at 3.175 mm Fig 14. SOT428: minimum pad size for surface-mounting 001aab021 7.0 7.0 4.57 2.5 2.15 1.5
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Table 6. Revision history
- The format of this data sheet has been redesigned to comply with the new identity guidelines of NXP Semiconductors.
- Legal texts have been adapted to the new company name where appropriate.
- Added type numbers BT151S-500L and BT151S-650L BT151S_SERIES_4 (9397 750 13161)
20040609 Product specification - BT151S_SERIES_3
BT151S_SER_L_R_5 © NXP B.V. 2006. All rights reserved. Product data sheet Rev. 05 — 9 October 2006 12 of 13 NXP Semiconductors BT151S series L and R Thyristors 10. Legal information
10.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design. [2] The term ‘short data sheet’ is explained in section “Definitions”. [3] The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status information is available on the Internet at URL http://www.nxp.com.
10.2 Definitions
Draft —The document is a draft version only. The content is still under internal review and subject to formal approval, which may result in modifications or additions. NXP Semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. Short data sheet —A short data sheet is an extract from a full data sheet with the same product type number(s) and title. A short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail.
10.3 Disclaimers
General — Information in this document is believed to be accurate and reliable. However, NXP Semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. Right to make changes —NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. Suitability for use —NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of a NXP Semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. NXP Semiconductors accepts no liability for inclusion and/or use of NXP Semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customer’s own risk. Applications —Applications that are described herein for any of these products are for illustrative purposes only. NXP Semiconductors makes no representation or warranty that such applications will be suitable for the specified use without further testing or modification. Limiting values —Stress above one or more limiting values (as defined in the Absolute Maximum Ratings System of IEC 60134) may cause permanent damage to the device. Limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the Characteristics sections of this document is not implied. Exposure to limiting values for extended periods may affect device reliability. Terms and conditions of sale —NXP Semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www.nxp.com/profile/terms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. No offer to sell or license —Nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights.
10.4 Trademarks
Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. 11. Contact information For additional information, please visit:http://www.nxp.com For sales office addresses, send an email to:salesaddresses@nxp.com Document status[1][2] Product status[3] Definition Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification.
NXP Semiconductors BT151S series L and R Thyristors © NXP B.V. 2006. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 9 October 2006 Document identifier: BT151S_SER_L_R_5 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section ‘Legal information’. 12. Contents