BT151L-8-TA3-T

BT151_10 UTC | Alldatasheet

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UNISONIC TECHNOLOGIES CO., LTD BT151 SCR w w w . u n i s o n i c . c o m . t w 1 of 5 Copyright © 2010 Unisonic Technologies Co., Ltd QW-R301-017,C SCRS „ DESCRIPTION Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domes tic lighting, heating and static switching. „ SYMBOL TO-252 TO-2201 „ ORDERING INFORMATION Order Number Pin Assignment Lead Free Halogen Free Package 1 2 3 Packing BT151L-5-TA3-T BT151G-5-TA3-T TO-220 K A G Tube BT151L-5-TN3-R BT151G-5-TN3-R TO-252 K A G Tape Reel BT151L-6-TA3-T BT151G-6-TA3-T TO-220 K A G Tube BT151L-6-TN3-R BT151G-6-TN3-R TO-252 K A G Tape Reel BT151L-8-TA3-T BT151G-8-TA3-T TO-220 K A G Tube BT151L-8-TN3-R BT151G-8-TN3-R TO-252 K A G Tape Reel Note: Pin assignment: K: CATHODE A: ANODE G: GATE

UNISONIC TECHNOLOGIES CO., LTD 2 of 5 www.unisonic.com.tw Q W - R 3 0 1 - 0 1 7 , C „ ABSOLUTE MAXIMUM RATING PARAMETER SYMBOL RATINGS UNIT BT151-5 500 (Note 1) BT151-6 650 (Note 1) Repetitive Peak Off-State Voltages BT151-8 VDRM, VRRM 800 V Average On-State Current (half sine wave; Tmb ≤109°C) I T(AV) 7.5 A RMS on-State Current (all conduction angles) I T(RMS) 12 A t = 10 ms 100 Non-Repetitive Peak On-State Current (half sine wave; TJ = 25 °C prior to surge) t = 8.3 ms ITSM 110 A I2t for Fusing (t = 10 ms) I 2t 50 A 2s Repetitive Rate of Rise of On-State Current After Triggering (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs) dIT /dt 50 A/ μs Peak Gate Current I GM 2 A Peak Gate Voltage V GM 5 V Peak Reverse Gate Voltage V RGM 5 V Peak Gate Power P GM 5 W Average Gate Power (Over any 20 ms period) P G(AV) 0.5 W Storage Temperature T stg -40 ~150 °C Operating Junction Temperature T J 125 °C Note: 1. Although not recommended, off-state voltages up to 800V may be applie d without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/μs. 2. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. „ THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Mounting Base θJMb 1.3 K/W Junction to Ambient θJA 60 K/W „ STATIC CHARACTERISTICS (TJ=25℃,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate Trigger Current I GT V D = 12 V, IT = 0.1 A 2 15 mA Latching Current I L V D = 12 V, IGT = 0.1 A 10 40 mA Holding Current I H V D = 12 V, IGT = 0.1 A 7 20 mA On-State Voltage V T I T = 23 A 1.4 1.75 V Gate Trigger Voltage V GT VD = 12 V, IT = 0.1 A VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C 0.25 0.6 0.4 1.5 V Off-State Leakage Current I D , IR V D = VDRM(max) , VR = VRRM(max) ,TJ = 125°C 0.1 0.5 mA „ DYNAMIC CHARACTERISTICS(TJ=25℃,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate open circuit 50 130 Critical Rate of Rise of Off-State Voltage dVD /dt VDM = 67% VDRM(max), TJ = 125 °C, exponential waveform; RGK = 100Ω 200 1000 V/μs Gate Controlled Turn-on Time tGT ITM = 40 A, VD = VDRM(max), IG = 0.1 A, dIG /dt = 5 A/μs 2 μs Circuit Commutated Turn-off tIme tQ VD = 67% VDRM(max), TJ = 125°C; ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs, dVD /dt = 50 V/μs, RGK = 100 Ω 70 μs

UNISONIC TECHNOLOGIES CO., LTD 3 of 5 www.unisonic.com.tw Q W - R 3 0 1 - 0 1 7 , C „ TYPICAL CHARACTERISTICS 1ms100µs10µs 1000 T/s 100 10ms ITSM/A dIT/dt limit Fig 2. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Pulse Width tp, for Sinusoidal Currents, tp ≤ 10ms IT time ITSM TJ initial=25°C max Fig 1. Maximum On-State Dissipation, ptot, Versus Average On-State Current, IT(AV), Where a=form factor=IT(RMS)/IT(AV) IT(AV)/A 105.5 125 118.5 Ptot/W 10 112 Conduction angle degrees form factor a 120 180 2.8 2.2 1.9 1.57 α 2.8 2.2 1.9 α=1.57 12 3 4 567 8 Tmb(max)/°C T ITSM/A Fig 4. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Number Of Cycles,For Sinusoidal Currents, f=50HZ 100 Number Of Half Cycles At 50Hz 0 10 1001 IT time ITSM TJ initial=25°C max 120 1000100 150-50 50 0 Tmb/°C IT(RMS)/A Fig 3. Maximum Permissible Rms Current lT(RMS), Versus Mounting Base Temperature Tmb 109°C T

UNISONIC TECHNOLOGIES CO., LTD 4 of 5 www.unisonic.com.tw Q W - R 3 0 1 - 0 1 7 , C „ TYPICAL CHARACTERISTICS (Cont.) 100 150-50 50 0 TJ/°C 2.5 1.5 0.5 Fig 7. Normalised Gate Trigger Current IGT(TJ)/ IGT(25°C), Versus Junction Temperature TJ IGT(25°C) IGT(TJ) 100 150-50 500 TJ/°C 2.5 1.5 0.5 IL(25°C) IL(TJ) Fig 8. Normalised Latching Current IL(TJ)/IL(25°C), Versus Junction Temperature TJ VT/V 100 150-50 500 TJ/°C 2.5 1.5 0.5 Fig 9. Normalised Holding Current IH(TJ)/IH(25 ), Versus Junction Temperature TJ IH(25°C) IH(TJ) TJ=125°C 00 . 5 1 1 . 5 Fig 10. Typical and Maximum On-State Characteristic TJ=25°C typ max

30 IT/A

1ms0.1ms10us 0.1 tp/s 0.001 0.01 10ms 0.1s Zth j-mb(K/W) 1s 10s tp t PD 100 150500 10000 TJ/°C 1000 Fig 12. Typical, Critical Rate Of Rise Of Off-State Voltage, dVD/dt Versus Junction Temperature TJ dVD/dt(V/µs) RGK=100Ω 100 gate open circuit Fig 11.Transient Thermal Impedance Zthj-mb, Versus Pulse Width tp

UNISONIC TECHNOLOGIES CO., LTD 5 of 5 www.unisonic.com.tw Q W - R 3 0 1 - 0 1 7 , C UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.