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'HVFULSWLRQ Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domes tic lighting, heating and static switching. 6\\PERO 6&5

Ordering Information

Part No. Package Packing BT151-500R TO-220 50pcs / Tube 50pcs / Tube BT151-650R BT151-800R TO-220 TO-220 50pcs / Tube Mar.2015-REV.00 www.sddydz.com %7 Series R BT151F-400R ITO-220 50pcs / Tube 50pcs / Tube BT151F-650R BT151F-800R ITO-220 ITO-220 50pcs / Tube

ABSOLUTE MAXIMUM RATING (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltages BT151(F)-500R VDRM, VRRM 500 (Note 2) V BT151(F)-650R 650 (Note 2) BT151(F)-800R 800 Average On-State Current (half sine wave; Tmb ≤109°C) I T(AV) 7.5 A RMS on-State Current (all conduction angles) IT(RMS) 12 A Non-Repetitive Peak On-State Current (half sine wave; TJ = 25 °C prior to surge) t = 10 ms ITSM 100 A t = 8.3 ms 110 I2t for Fusing (t = 10 ms) I2t 50 A2s Repetitive Rate of Rise of On-State Current After Triggering (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/μs) dIT /dt 50 A/μs Peak Gate Current IGM 2 A Peak Gate Voltage VGM 5 V Peak Reverse Gate Voltage VRGM 5 V Peak Gate Power PGM 5 W Average Gate Power (Over any 20 ms period) PG(AV) 0.5 W Operating Junction Temperature TJ 125 °C Storage Temperature TSTG -40 ~150 °C Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. 2. Although not recommended, off-st ate voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/μs. THERMAL DATA PARAMETER SYMBOL RATINGS UNIT Junction to Mounting Base TO-220 θJMb 1.3 K/W Junction to Ambient TO-220 θJA 60 K/W STATIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate Trigger Current IGT V D = 12 V, IT = 0.1 A 4.2 5 mA Latching Current IL V D = 12 V, IGT = 0.1 A 12.6 40 mA Holding Current IH V D = 12 V, IGT = 0.1 A 12 20 mA On-State Voltage VT I T = 23 A 1.59 1.75 V Gate Trigger Voltage VGT VD = 12 V, IT = 0.1 A VD = VDRM(max) , IT = 0.1 A, TJ = 125 °C 0.35 0.7 0.5 1.5 V Off-State Leakage Current I D , IR V D = VDRM(max) , VR = VRRM(max) ,TJ = 125°C 0.1 0.5 mA DYNAMIC CHARACTERISTICS (TJ = 25°C, unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN MAX UNIT Critical Rate of Rise of Off-State Voltage dV D /dt VDM = 67% VDRM(max), TJ = 125 °C, exponential waveform; Gate open circuit 50 130 V/μs RGK = 100Ω 200 1000 Gate Controlled Turn-on Time t GT ITM = 40 A, VD = VDRM(max), IG = 0.1 A, dIG /dt = 5 A/μs 2 μs Circuit Commutated Turn-off tIme t Q VD = 67% VDRM(max), TJ = 125°C; ITM = 20 A, VR = 25 V, dITM /dt = 30 A/μs, dVD /dt = 50 V/μs, RGK = 100 Ω 70 μs 6&5 Mar.2015-REV.00 www.sddydz.com %7 Series R

1ms100µs10µs 1000 T/s 100 10ms ITSM/A dIT/dt limit Fig 2. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Pulse Width tp, for Sinusoidal Currents, tp ≤ 10ms IT time ITSM TJ initial=25°C max Fig 1. Maximum On-State Dissipation, ptot, Versus Average On-State Current, IT(AV), Where a=form factor=IT(RMS)/IT(AV) IT(AV)/A 105.5 125 118.5 Ptot/W 10 112 Conduction angle degrees form factor a 120 180 2.8 2.2 1.9 1.57 α 2.8 2.2 1.9 α=1.57 12 3 4 567 8 Tmb(max)/°C T ITSM/A Fig 4. Maximum Permissible Non-Repetitive Peak On-State Current ITSM,Versus Number Of Cycles,For Sinusoidal Currents, f=50HZ 100 Number Of Half Cycles At 50Hz 0 10 1001 IT time ITSM TJ initial=25°C max 120 1000100 150-50 50 0 Tmb/°C IT(RMS)/A Fig 3. Maximum Permissible Rms Current lT(RMS), Versus Mounting Base Temperature Tmb 109°C T 6&5 Mar,2015-REV.00 www.sddydz.com %7 Series R

TYPICAL CHARACTERISTICS(Cont.) 100 150-50 50 0 TJ/°C 2.5 1.5 0.5 Fig 7. Normalised Gate Trigger Current IGT(TJ)/ IGT(25°C), Versus Junction Temperature TJ IGT(25°C) IGT(TJ) 100 150-50 500 TJ/°C 2.5 1.5 0.5 IL(25°C) IL(TJ) Fig 8. Normalised Latching Current IL(TJ)/IL(25°C), Versus Junction Temperature TJ VT/V 100 150-50 500 TJ/°C 2.5 1.5 0.5 Fig 9. Normalised Holding Current IH(TJ)/IH(25 ), Versus Junction Temperature TJ IH(25°C) IH(TJ) TJ=125°C 00 . 5 1 1 . 5 Fig 10. Typical and Maximum On-State Characteristic TJ=25°C typ max

30 IT/A

1ms0.1ms10us 0.1 tp/s 0.001 0.01 10ms 0.1s Zth j-mb(K/W) 1s 10s tp t PD 100 150500 10000 TJ/°C 1000 Fig 12. Typical, Critical Rate Of Rise Of Off-State Voltage, dVD/dt Versus Junction Temperature TJ dVD/dt(V/µs) RGK=100Ω 100 gate open circuit Fig 11.Transient Thermal Impedance Zthj-mb, Versus Pulse Width tp 6&5 Mar.2015-REV.00 www.sddydz.com %7 Series

ITO-220 Mechanical Drawing 5 of 5 6&5 TO-220 Mechanical Drawing Mar,2015-REV.00 www.sddydz.com %7 Series