BT151

BT151 UTC | Alldatasheet

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UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-007,B SCRs

DESCRIPTION

Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SYMBOL KA G TO-220 1: CATHODE 2: ANODE 3: GATE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL RATING UNIT Repetitive peak off-state voltages BT151-500 BT151-650 BT151-800 V DRM , VRRM 500* 650* 800 V Average on-state current (half sine wave; Tmb ≤109 °C) IT(AV) 7.5 A RMS on-state current (all conduction angles) I T(RMS) 12 A Non-repetitive peak on-state current (half sine wave; Tj = 25 °C prior to surge) t = 10 ms t = 8.3 ms ITSM 100 110 A I2t for fusing (t = 10 ms) I 2t 50 A 2s Repetitive rate of rise of on-state current after triggering (ITM = 20 A; IG = 50 mA; dIG /dt = 50 mA/ms) dIT /dt 50 A/μs Peak gate current I GM 2 A Peak gate voltage V GM 5 V Peak reverse gate voltage V RGM 5 V Peak gate power (over any 20 ms period) P GM 5 W Average gate power P G(AV) 0.5 W Storage temperature T stg -40~150 ℃ Operating junction temperature T j 125 ℃ *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/ µs.

UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-007,B THERMAL RESISTANCES PARAMETER SYMBOL MIN TYP MAX UNIT Thermal resistance Junction to mounting base R th j-mb 1.3 K/W Thermal resistance Junction to ambient In free air Rth j-a 60 K/W STATIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate trigger current I GT V D = 12 V; IT = 0.1 A 2 15 mA Latching current I L V D = 12 V; IGT = 0.1 A 10 40 mA Holding current I H V D = 12 V; IGT = 0.1 A 7 20 mA On-state voltage V T I T = 23 A 1.4 1.75 V Gate trigger voltage VGT VD = 12 V; IT = 0.1 A VD = VDRM(max) ; IT = 0.1 A; Tj = 125 °C 0.25 0.6 0.4 1.5 V Off-state leakage current ID , IR VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 °C 0.1 0.5 mA DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Critical rate of rise of off-state voltage dVD /dt VDM = 67% VDRM(max) ; Tj = 125 °C; exponential waveform; Gate open circuit R GK = 100Ω 200 130 1000 V/µs Gate controlled turn-on time tgt ITM = 40 A; VD = VDRM(max) ; IG = 0.1 A; dIG /dt = 5 A/µs 2 µs Circuit commutated Turn-off time t q VD = 67% VDRM(max) ; Tj = 125 °C; ITM = 20 A; VR = 25 V; dITM /dt = 30 A/μs; dVD /dt = 50 V/μs; RGK = 100 Ω 70 µs

UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-007,B 1ms100us10us 1000 T/s 100 10ms ITSM/A dIT/dt limit surge duration /S IT(RMS)/A 0.01 0.1 1 10 Fig.2.Maximum Permissible non-repetitive peak on-state Current I TSM,versus pulse width t p, for sinusoidal currents,t p≦10ms Fig. 5.Maximum permissible repetitive rms on-state current l T(RMS) ,versus surge duration,for sinusoidal currents,f=50HZ;T mb ≦109℃ IT time ITSM Tj initial=25 ℃max Fig.1. Maximum on-state dissipation,P tot ,versus average on-state current,I T(AV) ,where a=form factor=I T(RMS) /IT(AV) . 480 IT(RMS)/A 105.5 125 118.5 Ptot/W Tmb(max)/C ITSM/A Fig4.Maximum Permissible non-repetitive peak on-state current I TSM ,versus number of cycles,for sinusoidal currents,f=50HZ. 112 1 35 7 α 2.8 2.2 1.9 a=1.57 conduction angle degrees form factor a 120 180 2.8 2.2 1.9 1.57 100 Number of half cycles at 50Hz 0 10 1001 IT time ITSM Tj initial=25 ℃max 120 1000 T 100 150 -50 500 1.6 0.8 Tj/℃ 1.2 1.4 0.6 0.4 VGT(25℃) VGT(Tj) 100 150-50 50 0 Tmb/C IT(RMS)/A 109℃ Fig.3. Maximum permissible rms current lT(RMS), versus mounting base temperature T mb Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25℃),versus junction temperature Tj. 05 0 1 0 0 1 5 0

UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-007,B 1ms0.1ms10us 0.1 tp/s Fig.11.Transient thermal impedance Zthj-mb, versus pulse width tp. 0.001 0.01 10ms 0.1s VT/V Fig.10.Typical and maximum on-state characteristic. IT/A Zth j-mb(K/W) 100 150-50 50 0 Tj/C 2.5 1.5 0.5 Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃),versus junction temperature Tj. IGT(25℃) IGT(Tj) max 100 150-50 50 0 Tj/C 2.5 1.5 0.5 Fig.8.Normalised latching Current IL(Tj)/IL(25℃), versus junction temperature Tj IL(25℃) IL(Tj) 100 150-50 50 0 Tj/C 2.5 1.5 Fig. 9.Normalised holding current IH(Tj)/IH(25℃), versus junction temperature Tj. IH(25℃) IH(Tj) 1s 10s tp t PD 100 150500 10000 Tj/C 1000 Fig.12.Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. dVD/dt(V/us) RGK=100Ω 100 gate open circuit Tj=25℃ Tj=125℃ 0 0.5 1 1.5 typ

UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-007,B UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.