BT151 FCI | Alldatasheet
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For use in Applications Requiring high Bidirectional Blocking Voltage Capability and high Thermal Cycling Performance. Typical Applications include Motor Control, Industrial and Domestic Lighting, Heating and Static Switching ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITION UNIT BT151- 500 650 Repetitive Peak Off State Voltage VDRM, VRRM *500 *650 V Average On State Current IT (AV) half sine wave, Tmb < 109ºC 7.5 A RMS On State Current IT (RMS) all conduction angles A Non Repetitive Peak On State Current ITSM half sine wave, TJ=25ºC prior to surge t=10ms A t=8.3ms A l2t for Fusing I2t t=10ms A2s Repetitive Rate of Rise of On State Current After Triggering dlT/dt ITM=20A, IG=50mA, dlG/dt=50mA/µs A/µs Peak Gate Current IGM A Peak Gate Voltage VGM V Peak Reverse Gate Voltage VRGM V Peak Gate Power PGM W Average Gate Power PG (AV) Over any 20ms period W Storage Temperature Tstg - 40 to +150 ºC Operating Junction Temperature Tj ºC THERMAL RESISTANCE Junction to Mounting Base Rth (j-mb) K/W Junction to Ambient Rth (j-a) in free air K/W *Although not recommended, off state voltage upto 800V may be applied without damage, but the thyristor may switch to the on state. The rate of rise of current should not exceed 15A/mms 0.5 60 typ 125 1.3 max VALUE 110 100 5.0 5.0 2.0 5.0 C G A Description Mechanical Dimensions BT151-500~650 TO-220AB ***=Date Code Marking BT151 BT151 - 500 - 650 A
ELECTRICAL CHARACTERISTICS (TJ=25ºC unless specified otherwise) PARAMETER SYMBOL TEST CONDITION MIN MAX UNIT Gate Trigger Current IGT VD=12V, IT=0.1A 15 mA Latching Current IL VD=12V, IGT=0.1A 40 mA Holding Current IH VD=12V, IGT=0.1A 20 mA On State Voltage VT IT=23A 1.75 V Gate Trigger Voltage VGT VD=12V, IT=0.1A 1.5 V VD=VDRM (max), IT=0.1A,TJ=125ºC 0.25 V Off State Leakage Current ID, IR VD= VDRM (max), VR=VRRM(max) TJ=125ºC 0.5 mA DYNAMIC CHARACTERISTICS PARAMETER SYMBOL TEST CONDITION MIN TYP MAX UNIT Critical Rate of Rise of Off State Voltage dVD/dt VDM=67% VDRM=(max), TJ=125ºC, exponential waveform gate open circuit 50 V/µs RGK =100Ω 200 V/µs Gate Controlled Turn On time tgt ITM=40A, VD=VDRM (max), IG=0.1A, dlG/dt=5A/µs 2.0 µs Circuit Commutated Turn Off time tq VD=67% VDRM(max), TJ=125ºC, ITM=20A, VR=25V, dlTM/dt=30A/µs, dVD/dt=50V/µs, RGK=100Ω 70 µs