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Product specification April 2004 /g3DISCRETE SEMICONDUCTORS/g3 BT151 series C Thyristors
/g49/g59/g51 Semiconductors Product specification Thyristors BT151 series C GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plastic SYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT151- 500C 650C 800C bidirectional blocking voltage V DRM, Repetitive peak off-state 500 650 800 V capability and high thermal cycling V RRM voltages performance. Typical applications I T(AV) Average on-state current 7.5 7.5 7.5 A include motor control, industrial I T(RMS) RMS on-state current 12 12 12 A and domestic lighting, heating and I TSM Non-repetitive peak on-state 100 100 100 A static switching. current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 60134). SYMBO PARAMETER CONDITIONS MIN. MAX. UNIT L -500C -650C -800C VDRM, Repetitive peak - 500 1 6501 800 V VRRM off-state voltages IT(AV) Average on-state half sine wave; T mb ≤ 109 ˚C - 7.5 A current IT(RMS) RMS on-state current all conduction angles - 12 A ITSM Non-repetitive peak half sine wave; T j = 25 ˚C on-state current prior to surge t = 10 ms - 100 A t = 8.3 ms - 110 A I 2tI 2t for fusing t = 10 ms - 50 A2s dIT/dt Repetitive rate of rise of I TM = 20 A; IG = 50 mA; - 50 A/μs on-state current after dI G/dt = 50 mA/μs triggering IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate - 5 V voltage PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature ak g12 3 tab 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/μs. April 2004 1 Rev 1.000
/g49/g59/g51 Semiconductors /g3Product specification Thyristors BT151 series C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Rth j-mb Thermal resistance - - 1.3 K/W junction to mounting base Rth j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current V D = 12 V; IT = 0.1 A - 2 15 mA IL Latching current VD = 12 V; IGT = 0.1 A - 10 40 mA IH Holding current VD = 12 V; IGT = 0.1 A - 7 20 mA VT On-state voltage IT = 23 A - 1.44 1.75 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.6 1.5 V VD = VDRM(max); IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID, IR Off-state leakage current V D = VDRM(max); VR = VRRM(max); Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D/dt Critical rate of rise of V DM = 67% VDRM(max); Tj = 125 ˚C; off-state voltage exponential waveform; Gate open circuit 50 130 - V/μs RGK = 100 Ω 200 1000 - V/μs tgt Gate controlled turn-on I TM = 40 A; VD = VDRM(max); IG = 0.1 A; - 2 - μs time dI G/dt = 5 A/μs tq Circuit commutated V D = 67% VDRM(max); Tj = 125 ˚C; - 70 - μs turn-off time I TM = 20 A; VR = 25 V; dITM/dt = 30 A/μs; dVD/dt = 50 V/μs; RGK = 100 Ω April 2004 2 Rev 1.000
/g49/g59/g51 Semiconductors /g3/g3/g3Product specification Thyristors BT151 series C Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS)/ IT(AV). Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. Fig.4. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 109˚C. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. 0123456780 a = 1.57 1.9 2.2 2.8 IT(AV) / A Ptot / W Tmb(max) / C 125 118.5 112 105.5 conduction angle form factor degrees 120 180 2.8 2.2 1.9 1.57 a 1 10 100 10000 100 120 Number of half cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T 100 1000 10us 100us 1ms 10ms T / s ITSM / A T ITSM time I Tj initial = 25 C max T dI /dt limitT 0.01 0.1 1 100 surge duration / s IT(RMS) / A -50 0 50 100 1500
15 BT151
IT(RMS) / A 109 C -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 Tj / C VGT(Tj) VGT(25 C) April 2004 3 Rev 1.000
/g49/g59/g51 Semiconductors /g3Product specification Thyristors BT151 series C Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH(Tj)/ IH(25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 VT (V) IT typ max (A) Vo = 1.06 V Rs = 0.0304 ohms Tj = 125 °C Tj = 25 °C -50 0 50 100 1500 0.5 1.5 2.5
3 BT145
IL(Tj) IL(25 C) 0.001 0.01 0.1 tp / s Zth j-mb (K/W) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tpP t D -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IH(Tj) IH(25 C) 0 50 100 15010 100 1000 10000 Tj / C dVD/dt (V/us) gate open circuit RGK = 100 Ohms April 2004 4 Rev 1.000
/g49/g59/g51 Semiconductors /g3Product specification Thyristors BT151 series C MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,03,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min April 2004 5 Rev 1.000
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