BT151-500C

BT151-500C NXP | Alldatasheet

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Philips Semiconductors Product specification Thyristors BT151 series C GENERAL DESCRIPTION QUICK REFERENCE DATA Passivated thyristors in a plasticSYMBOL PARAMETER MAX. MAX. MAX. UNIT envelope, intended for use in applications requiring high BT151- 500C 650C 800C bidirectional blocking voltage VDRM , Repetitive peak off-state 500 650 800 V capability and high thermal cycling VRRM voltages performance. Typical applications IT(AV) Average on-state current 7.5 7.5 7.5 A include motor control, industrial IT(RMS) RMS on-state current 12 12 12 A and domestic lighting, heating and ITSM Non-repetitive peak on-state 100 100 100 A static switching. current PINNING - TO220AB PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 cathode 2 anode 3 gate tab anode LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 60134). SYMBO PARAMETER CONDITIONS MIN. MAX. UNIT L -500C -650C -800C VDRM , Repetitive peak - 500 1 6501 800 V VRRM off-state voltages IT(AV) Average on-state half sine wave; Tmb ≤ 109 ˚C - 7.5 A current IT(RMS) RMS on-state current all conduction angles - 12 A ITSM Non-repetitive peak half sine wave; Tj = 25 ˚C on-state current prior to surge t = 10 ms - 100 A t = 8.3 ms - 110 A I2tI 2t for fusing t = 10 ms - 50 A 2s dIT/dt Repetitive rate of rise of ITM = 20 A; IG = 50 mA; - 50 A/ µs on-state current after dIG /dt = 50 mA/µs triggering IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V VRGM Peak reverse gate - 5 V voltage PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature ak g12 3 tab 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. April 2004 1 Rev 1.000

Philips Semiconductors Product specification Thyristors BT151 series C THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance - - 1.3 K/W junction to mounting base R th j-a Thermal resistance in free air - 60 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A - 2 15 mA IL Latching current V D = 12 V; IGT = 0.1 A - 10 40 mA IH Holding current V D = 12 V; IGT = 0.1 A - 7 20 mA VT On-state voltage I T = 23 A - 1.44 1.75 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.6 1.5 V VD = VDRM(max) ; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID , IR Off-state leakage current VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; off-state voltage exponential waveform; Gate open circuit 50 130 - V/ µs R GK = 100 Ω 200 1000 - V/ µs tgt Gate controlled turn-on ITM = 40 A; VD = VDRM(max) ; IG = 0.1 A; - 2 - µs time dI G /dt = 5 A/µs tq Circuit commutated V D = 67% VDRM(max) ; Tj = 125 ˚C; - 70 - µs turn-off time I TM = 20 A; VR = 25 V; dITM /dt = 30 A/µs; dVD /dt = 50 V/µs; RGK = 100 Ω April 2004 2 Rev 1.000

Philips Semiconductors Product specification Thyristors BT151 series C Fig.1. Maximum on-state dissipation, Ptot, versus average on-state current, IT(AV), where a = form factor = IT(RMS) / IT(AV). Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 10ms. Fig.3. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb . Fig.4. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 109˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0123456780 a = 1.57 1.9 2.2 2.8 IT(AV) / A Ptot / W Tmb(max) / C 125 118.5 112 105.5 conduction angle form factor degrees 120 180 2.8 2.2 1.9 1.57 a 1 10 100 10000 100 120 Number of half cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T 100 1000 10us 100us 1ms 10ms T / s ITSM / A T ITSM time I Tj initial = 25 C max T dI /dt limitT 0.01 0.1 1 100 surge duration / s IT(RMS) / A -50 0 50 100 1500 BT151 Tmb / C IT(RMS) / A 109 C -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 Tj / C VGT(Tj) VGT(25 C) April 2004 3 Rev 1.000

Philips Semiconductors Product specification Thyristors BT151 series C Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 VT (V) IT typ max (A) Vo = 1.06 V R s = 0.0304 ohms Tj = 125 °C Tj = 25 °C -50 0 50 100 1500 0.5 1.5 2.5

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IL(Tj) IL(25 C) 0.001 0.01 0.1 tp / s Zth j-mb (K/W) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tpP t D -50 0 50 100 1500 0.5 1.5 2.5 Tj / C IH(Tj) IH(25 C) 0 50 100 15010 100 1000 10000 Tj / C dVD/dt (V/us) gate open circuit RGK = 100 Ohms April 2004 4 Rev 1.000

Philips Semiconductors Product specification Thyristors BT151 series C MECHANICAL DATA Dimensions in mm Net Mass: 2 g Fig.13. SOT78 (TO220AB). pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT78 (TO220) envelopes. 2. Epoxy meets UL94 V0 at 1/8". 10,3 max 3,7 2,8 3,03,0 max not tinned 1,3 max (2x) 123 2,4 0,6 4,5 max 5,9 min 15,8 max 1,3 2,54 2,54 0,9 max (3x) 13,5 min April 2004 5 Rev 1.000

Philips Semiconductors Product specification Thyristors BT151 series C DEFINITIONS DATA SHEET STATUS DATA SHEET PRODUCT DEFINITIONS STATUS 2 STATUS 3 Objective data Development This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product Product data Production This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Changes will be communicated according to the Customer Product/Process Change Notification (CPCN) procedure SNW-SQ-650A Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 2 Please consult the most recently issued datasheet before initiating or completing a design. 3 The product status of the device(s) described in this datasheet may have changed since this datasheet was April 2004 6 Rev 1.000