BT150

BT150 UTC | Alldatasheet

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UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R301-008,B SCRs

DESCRIPTION

Passivated thyristors in a plastic envelope, intended for use in applications requiring high bidirectional blocking voltage capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting, heating and static switching. SYMBOL KA G TO-220 1: CATHODE 2: ANODE 3: GATE ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL RATING UNIT Repetitive peak off-state voltages BT150-500 BT150-650 BT150-800 V DRM , VRRM 500* 650* 800 V Average on-state current (half sine wave; Tmb ≤113 °C) IT(AV) 2.5 A RMS on-state current (all conduction angles) IT(RMS) 4 A Non-repetitive peak on-state current (half sine wave; Tj = 25 °C prior to surge) t = 10 ms t = 8.3 ms I TSM A I2t for fusing (t = 10 ms) I 2t 6.1 A 2s Repetitive rate of rise of on-state current after triggering (ITM = 10 A; IG = 50 mA; dIG /dt = 50 mA/ms) dIT /dt 50 A/μs Peak gate current I GM 2 A Peak gate voltage V GM 5 V Peak reverse gate voltage V RGM 5 V Peak gate power (over any 20 ms period) P GM 5 W Average gate power P G(AV) 0.5 W Storage temperature T stg -40~150 ℃ Operating junction temperature T j 125** ℃ *Although not recommended, off-state voltages up to 800V may be applied without damage, but the thyristor may switch to the on-state. The rate of rise of current should not exceed 15A/ µs. ** Note: operation above 110℃ may require the use of a gate to cathode resistor of 1k Ω or less.

UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R301-008,B THERMAL RESISTANCES PARAMETER SYMBOL MIN TYP MAX UNIT Thermal resistance Junction to mounting base R th j-mb 2.5 K/W Thermal resistance Junction to ambient In free air R th j-a 60 K/W STATIC CHARACTERISTICS (Tj=25°C,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Gate trigger current I GT V D = 12 V; IT = 0.1 A 15 200 mA Latching current I L V D = 12 V; IGT = 0.1 A 0.17 10 mA Holding current I H V D = 12 V; IGT = 0.1 A 0.10 6 MA On-state voltage V T I T = 5 A 1.23 1.8 V Gate trigger voltage VGT VD = 12 V; IT = 0.1 A VD = VDRM(max) ; IT = 0.1 A; Tj = 110 °C 0.1 0.4 0.2 1.5 V Off-state leakage current ID , IR VD = VDRM(max) ; VR = VRRM(max) ; Tj = 125 °C 0.1 0.5 mA DYNAMIC CHARACTERISTICS(Tj=25°C,unless otherwise stated) PARAMETER SYMBOL CONDITIONS MIN TYP MAX UNIT Critical rate of rise of off-state voltage dVD /dt VDM = 67% VDRM(max) ; Tj = 125 °C; exponential waveform; RGK = 100Ω

50 V/µs

time tgt ITM = 10 A; VD = VDRM(max) ; IG = 5mA; dIG /dt = 0.2A/µs 2 µs Circuit commutated Turn-off time t q VD = 67% VDRM(max) ; Tj = 125 °C; ITM = 8A; VR = 10V; dITM /dt = 10 A/μs; dVD /dt = 2V/μs; RGK = 1kΩ 100 µs

UTC UNISONIC TECHNOLOGIES CO., LTD. 3 QW-R301-008,B 1ms100us10us 1000 T/s Fig.1. Maximum on-state dissipation,Ptot ,versus average on-state current,IT(AV) ,where a=form factor=IT(RMS)/IT(AV). 100 2.50 IF(AV)/A 10ms 110 117.5 115 Ptot/W Tmb(max)/C ITSM/A ITSM/A dIT/dt limit surge duration /S Fig4.Maximum Permissible non-repetitive peak on-state current ITSM,versus number of cycles,for sinusoidal currents,f=50Hz. IT(RMS)/A 0.01 0.1 1 10 Fig.2.Maximum Permissible non-repetitive peak on-state Current ITSM,versus pulse width tp, for sinusoidal currents,tp 10ms≒ 100 150 -50 500 1.6 0.8 Tj/℃ 1.2 1.4 0.6 0.4 Fig. 5.Maximum permissible repetitive rms on-state current lT(RMS),versus surge duration,for sinusoidal currents,f=50Hz;Tmb ≦113℃ VGT(25℃) VGT(Tj) 20.5 112.5 13 1.5 α 2.8 2.2 1.9 a=1.57 conduction angle degrees form factor a 120 180 2.8 2.2 1.9 1.57 Number of half cycles at 50Hz 0 10 1001 IT time ITSM Tj initial=25℃max 1000 T IT time ITSM Tj initial=25℃max 100 150-50 50 0 Tmb/C IT(RMS)/A 113℃ Fig.3. Maximum permissible rms current lT(RMS), versus mounting base temperature Tmb Fig.6. Normalised gate trigger voltage VGT(Tj)/VGT(25℃,versus junctiontemperature Tj 0 50 100 150 122.5 120 125 T T 2

UTC UNISONIC TECHNOLOGIES CO., LTD. 4 QW-R301-008,B 1.501 0.5 VT/V Fig.10.Typical and maximum on-state characteristic. IT/A 100 150-50 50 0 Tj/C 2.5 1.5 0.5 Fig. 7.Normalised gate trigger Current IGT(Tj)/IGT(25℃),versus junction temperature Tj. IGT(25℃) IGT(Tj) typ max 100 150-50 50 0 Tj/C 2.5 1.5 0.5 Fig.8.Normalised latching Current IL(Tj)/IL(25℃), versus junction temperature Tj IL(25℃) IL(Tj) 100 150-50 50 0 Tj/C 2.5 1.5 0.5 Fig. 9.Normalised holding current IH(Tj)/IH(25℃), versus junction temperature Tj. IH(25℃) IH(Tj) 100 150500 1000 Tj/C 100 Fig.12.Typical, critical rate of rise of off-state voltage, dVD/dt versus junction temperature Tj. dVD/dt(V/us) Tj=125℃ Tj=25℃ Vo=1.26V Rs=0.099Ω RGK=100Ω 1ms0.1ms10us 0.1 tp/s Fig.11.Transient thermal impedance Zthj-mb,versus pulse width tp. 0.01 10ms 0.1s Zth j-mb(K/W) 1s 10s tp t P D 32.5

UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R301-008,B UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.