BT136 LUGUANG | Alldatasheet

Document overview

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Technical content

Features

◇The LGE BT136, 4A Ⅲ &Ⅳquadrants series triacs ,which can be operated in Ⅲ & Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blocking voltage and high temperature stability.

Applications

The LGE BT136 is suitable for inductive load switching operations,also can be used in ON/OFF function applications such as washing machine,induction motor starting circuits,vacuum cleaners,power tools and other motors such as speed control maker; heating regulation, solid state relay; phases control circuit ; AC motor speed regulation,and so on. Mechanical Data ◇ Moisture Sensitivity: MSL Level 1,per J-STD-020 ◇ Terminals:Matte Tin Finish. Solderable per MIL-STD-202 Method 208 ◇ Case Material：Molded Plastic; ◇ Molding compound meet UL Flammability ClassificationRating 94V-0 ◇ Case:JEDEC TO-220AB,TO-252 MAXIMUM RATING Ratings at 25℃ ambient tepmerature unless otherwise specified. PARAMETER SYMBOL VALUE Units R.M.S. On-State Current Tc=90 ℃ IT(RMS) 4 A Non-Repetitive Surge Peak On-State Current(fFull Cycle,Tj initial=25℃) F=50HZ T=20ms ITSM 40 A F=60HZ T=16.7ms 41 I2t Value for Fusing tp=10ms I2t 5.1 A 2s Critical Rate of Rise of On-State Current IG=2×IGT，tr≤100ns F=120HZ Tj=125℃ di/dt 50 A/μs Repetitive peak Off-State voltage Tj=25℃ VDRM/VRRM 500/600/800 V Non repetitive surge peak off-state voltage tp=10ms Tj=25℃ VDSM/VRSM V DRM/VRRM+100 V Peak Gate Current tp=20μs Tj=125℃ IGM 4 A Average Gate Power Dissipation Tj=125℃ PG(AV) 1 W Typical Thermal Resistance(Junction to Ambient) TO-220AB(Non-ins) RΘJA 60 ℃/W TO-252 70 Typical Thermal Resistance(Junction to Case (AC)) TO-220AB(Non-ins) RΘJC 2.4 ℃/W TO-252 4.2 Maximum Operating Junction temperature TJ -40~+125 ℃ Storage temperature range TSTG -40~+150 ℃ T1(1) G(3) T2(2) TO-252 TO-220AB

http://www.lgesemi.com Revision:20170615-P2 m a i l : l g e @ l g e s e m i . c o m ELECTRICAL CHARACTERISTICS(Ⅲ QUADRANTS) PARAMETER TEST CONDITIONS SYMBOL VALUES UNIT S TW SW CW BW Gate Trigger Current VD=12V,RL=100 Ω (ⅠⅡⅢquadrant) IGT MAX 5 10 35 50 mA Gate Trigger Voltage VGT M A X 1 . 5 V Gate Non-Trigger Voltage Tj=125 ℃(ⅠⅡⅢquadrant) VGD M I N 0.2 V Holding Current I T=0.5A IH MAX 10 15 35 60 mA Latching Current I G=1.2IGT ⅠⅢ quadrant IL MAX 10 20 50 70 mA Ⅱquadrant MAX 15 35 60 80 Critical Rate of Rise of Off-State Voltage VD=2/3VDRM,Tj=125℃ dv/dt MIN 20 40 400 1000 V/ μs Critical Rate of Rise of Off-State Voltage at Commutation, Tj=125℃ (dv/dt)c MIN 1.8 2.7 2.5 10 V/ μs ELECTRICAL CHARACTERISTICS(Ⅳ QUADRANTS) PARAMETER TEST CONDITIONS SYMBOL VALUE UNIT S D E F G Gate Trigger Current VD=12V,RL=100 Ω (ⅠⅡⅢⅣ quadra nt) ⅠⅡⅢ IGT MAX 5 10 25 50 mA Ⅳ MAX 10 25 50 100 Gate Trigger Voltage All V GT M A X 1 . 3 V Gate Non-Trigger Voltage Tj=125 ℃(ⅠⅡⅢquadrant) VGD M I N 0.2 V Holding Current I T=0.5A IH MAX 10 15 25 50 mA Latching Current =1.2I GT ⅠⅢ Ⅳquadrant IL MAX 10 15 40 50 mA Ⅱquadrant MAX 15 20 80 100 Critical Rate of Rise of Off-State Voltage VD=2/3VDRM,Tj=125℃ dv/dt MIN 10 20 200 400 V/ μs Critical Rate of Rise of Off-State Voltage at Commutation, Tj=125℃ (dv/dt)c MIN 1.8 2.7 2.5 10 V/ μs STATIC CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL VALUE UNITS Peak On-State Voltage ITM=A,Tj=25℃ VTM MAX 1 .55 V Threshold Voltage Tj=125℃ V TO MAX 0.87 V Dynamic Resistance Tj=125℃ Rd MAX 120 mΩ Repetitive Peak Off-Statte Curren VDRM=VRRM Tj=25℃ I DRM M A X 5 μA Tj=125℃ I RRM M A X 1 m A

http://www.lgesemi.com Revision:20170615-P3 m a i l : l g e @ l g e s e m i . c o m RATING AND CHARACTERISTICS CURVES FIG.1: Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature FIG.6: Relative variations of gate trigger current, holding current and latching current versus junction temperature FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp<20ms and corresponding value of I t (dI/dt < 50A/μs) 140 FIG.3: Surge peak on-state current versus number of cycles FIG.4: On-state characteristics (maximum values)

http://www.lgesemi.com Revision:20170615-P4 m a i l : l g e @ l g e s e m i . c o m PACKAGE OUTLINE DIMENSIONS TO-220AB units:mm PACKAGE OUTLINE DIMENSIONS TO-252 units:mm

http://www.lgesemi.com Revision:20170615-P5 m a i l : l g e @ l g e s e m i . c o m

ORDERING INFORMATION

16=16A Voltage 600=600V 800=800V Sensitivity and Type G = 5 0 m A F = 2 5 m A E = 1 0 m A D = 5 m A B W = 5 0 m A C W = 3 5 m A S W = 1 0 m A T W = 5 m A