BT136 RECTRON | Alldatasheet
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Paramete r Symbol Value Unit Test condition peak repetitive off-stage voltage V DRM , V RRM 600 V on-state RMS current I T (RMS) 4A T L < 66ºC NON repetitive surge peak on-state current I TSM
25 A Tp=20ms, Tj=25 ºC
critical rate of rise on-state current dI/dt (Q 1-3 ) 50 A/ Ms I TM =20A, T G =0.2A peak gate current I GM average gate power dissipation P G (AV) 0.5W storage temperature range Tstg -40 to +150 o C operating junction temperature range Tj 125 o C Electrical characteristics ( Tj=25ºC) unless otherwise specified Paramete r Symbol Value Unit Test condition gate trigger current I GT 10 mA T2+G+ V D =12V, I T =0.1A 10 mA T2+G- V D =12V, I T =0.1A 10 mA T2-G- V D =12V, I T =0.1A 25 mA T2-G+ V D =12V, I T =0.1A gate trigger voltage V GT
1.5 V V
D =12V, I T =0.1A hold current I H 30 mA V D =12V, I T =0.1A critical rate of rise off-state voltage dv/dt >
50 V/ Ms V
D =67%V DRM on-state voltage V TM
1.7 V I
T =5A off-state leakage current I DRM 0.5 mA V D DRM ; Tj=125 o C Rth(j-a)6 0 Rth(j-c)< 3.7 thermal resistance ºC/W 2020-07/38/17 REV:C BT136 Marking TO-220AB PIN CONFIGURATION: 1.MAIN TERMINAL 1 2.MAIN TERMINAL 2 3.GATE Part No.: BT136 Month Code: YY(01~12) Year Code: X(2019---A,2020---B...2030---L)
A 10.15 10.2 B 14.9 15.5 C 4.5 4.7 D 1.27 1.35 E 0.65 0.85 F 0.4 0.5 G 1.26 1.29 H 3.32 3.78 L 13.67 14.67 N 2.24 2.54 3.84 3.87 Un (mm)i t
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