BT136-500 KEXIN | Alldatasheet

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www.kexin.com.cn 1 Triacs 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max TO-252 Unit: mm T1T2 G ■ Features

  • Repetitive peak off-state voltages :VDRM=500V
  • RMS on-state current :IT(RMS)=4A
  • Non-repetitive peak on-state current :ITSM=25A BT136-500 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Testconditons Unit Repetitive peak off-state voltages VDRM V RMS on-state current IT(RMS) full sine wave; Tmb ≤ 1 ℃ A full sine wave; Tj = 25℃ prior to surge t = 20 ms A t = 16.7 ms A I2t for fusing I2t t = 10 ms A2S IT M = 6 A; IG = 0.2 A;dIG/dt = 0.2 A/μs T2+ G+ A/μs T2+ G- A/μs T2- G- A/μs T2- G+ A/μs Peak gate current IGM A Peak gate voltage VGM V Peak gate power PGM W Average gate power PG(AV) over any 20 ms period W Storage temperature Tstg ℃ Operating junction temperature Tj ℃ full cycle K/W half cycle K/W Thermal resistance junction to ambient Rth j-a in free air K/W Thermal resistance junction to mounting base 3.7 -40 to 150 125 Rth j-mb 3.1 3.0 Dit / dtRepetitive rate of rise of on-state current after triggering 0.5 500 Non-repetitive peak on-state current ITSM TriacsSMD Type 1 main terminal 1 3 gate 2 main teminal 2 Rating

www.kexin.com.cn 2 I ■ Electrical Characteristics Ta = 25℃ VD = 12 V; IT = 0.1 A T2+ G+ 5 35 25 50 mA T2+ G- 8 35 25 50 mA T2- G- 11 35 25 50 mA T2- G+ 30 70 70 100 mA VD = 12 V; IGT = 0.1 A T2+ G+ 7 20 20 30 mA T2+ G- 16 30 30 45 mA T2- G- 5 20 20 30 mA T2- G+ 7 30 30 45 mA Holding current IH VD = 12 V; IGT = 0.1 A 5 15 15 30 mA On-state voltage VT IT = 5 A 1.4 V VD = 12 V; IT = 0.1 A 0.7 V VD = 400 V; IT = 0.1 A;Tj = 125℃ 0.4 V Off-state leakage current ID VD = VDR M(max);Tj = 125℃ 0.1 mA Critical rate of rise of off-state voltage dVD /dt VDM =67% VDRM(max);Tj = 125 ℃ ; exponential waveform; gate open circuit 100 50 200 250 V/μs Critical rate of change of commutating voltage dVcom/dt VDM =400 V; Tj = 95 ℃ ;IT(RMS) =4 A;dIcom/dt =1.8 A/ms; gate open circuit 10 50 V/μs Gate controlled turn-on time tgt ITM =6 A; VD = VDRM(max);IG = 0.1 A; dIG/dt = 5 A/μs; 2 μs 0.25 Unit ILLatching current Min VGTGate trigger voltage IGTGate trigger current Max Parameter Symbol Testconditons Typ 1.70 1.5 0.5 BT136-500 SMD Type Triacs