BT134W KEXIN | Alldatasheet

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Repetitive peak off-state voltages :VDRM=500V 800V RMS on-state current :IT(RMS)=1A Non-repetitive peak on-state current :ITSM=10A SOT-223 Unit: mm 3.00+0.1 -0.1 0.70+0.1 -0.1 2.9 4.6 6.50+0.2 -0.2 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 1.65+0.15 -0.15 0.1max 0.90+0.05 -0.05 1T 1 2T 2 Triacs BT134W Series Absolute Maximum Ratings Ta = 25 Parameter Symbol Testconditons BT134W- 500 BT134W- 600 BT134W-

800 Unit

Repetitive peak off-state voltages VDRM 500 600 800 V RMS on-state current IT(RMS) full sine wave; Tmb 108 A full sine wave; Tj = 25prior to surge t=2 0m s A t = 16.7 ms A I2t for fusing I2t t=1 0m s A2S ITM =1 . 5A ;I G=0 . 2A ; dIG/dt =0 . 2A /s T2+ G+ A/ s T2+ G- A/ s T2- G- A/ s T2- G+ A/ s Peak gate current IGM A Peak gate voltage VGM V Peak gate power PGM W Average gate power PG(AV) over any 20 ms period W Storage temperature Tstg Operating junction temperature Tj Thermal resistance junction to solder point Rth j-sp full or half cycle K/W pcb mounted; minimum footprint K/W pcb mounted; K/W 156 0.5 - 4 0t o1 5 0 125 R th j-a Thermal resistance junction to ambient Non-repetitive peak on-state current I TSM dIT/dt Repetitive rate of rise of on-state current after triggering 0.5

www.kexin.com.cn2 SMD Type Electrical Characteristics Ta = 25 E F G E F G VD =1 2V ;IT =0 . 1A T2+ G+ 5 35 25 50 mA T2+ G- 8 35 25 50 mA T2- G- 11 35 25 50 mA T2- G+ 30 70 70 100 mA VD =1 2V ;IGT =0 . 1A T2+ G+ 7 20 20 30 mA T2+ G- 16 30 30 45 mA T2- G- 5 20 20 30 mA T2- G+ 7 30 30 45 mA Holding current I H VD =1 2V ;IGT = 0.1 A 5 15 15 30 mA On-state voltage V T IT =2A 1 . 2 V VD =1 2V ;IT = 0.1 A 0.7 V VD =4 0 0V ;IT = 0.1 A 0.4 V Off-state leakage current I D VD =V DRM(max);Tj = 125 0.1 mA Critical rate of rise of off-state voltage dVD/dt VDM =67% VDRM(max);Tj =1 2 5 ; exponential waveform; gate open circuit 100 50 200 250 V/ s Critical rate of change of commutating voltage dVcom/dt VDM = 400 V; Tj =9 5 ;IT(RMS) = 1A;dIcom/dt = 1.8 A/ms; gate open circuit 10 50 V/ s Gate controlled turn-on time t gt ITM =1 . 5A ;VD =V DRM(max);IG =0 . 1 A; dIG/dt =5A / s; 2 s 1.5 1.5 0.5 Parameter Symbol Testconditons Typ 0.25 Unit ILLatching current Min VGTGate trigger voltage IGTGate trigger current Max Thyristor BT134W Series

www.kexin.com.cn SMD Type Thyristor BT134W Series Fig.1. Maximum on-state dissipation, P tot , versus rms on-state current, I T(RMS) , where α = conduction angle. 0.2 0.4 0.6 0.8 1.2 1.4 = 180 120 BT134W IT(RMS) / A Ptot / W Tsp(max) / C 125 122 119 116 113 110 107 104 Fig.2. Maximum permissible non-repetitive peak on-state current I TSM , versus pulse width t p , for sinusoidal currents, t p 20ms. 100 1000 BT134W T / s ITSM / A 10us 100us 1ms 10ms 100ms T ITSM time I Tj initial = 25 C max T dI /dt limit T T2- G+ quadrant Fig.3. Maximum permissible non-repetitive peak on-state current I TSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. 1 10 100 10000 BT134W Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T Fig.4. Maximum permissible rms current I T(RMS) versus solder point temperature T sp -50 0 50 100 1500 0.2 0.4 0.6 0.8 1.2 BT134W Tsp / C IT(RMS) / A 108 C Fig.5. Maximum permissible repetitive rms on-state current I T(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; T sp 108˚C. 0.01 0.1 1 100 0.5 1.5 BT134W surge duration / s IT(RMS) / A Fig.6. Normalised gate trigger voltage V GT j )/ V GT (25˚C), versus junction temperature T j -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT136 Tj / C VGT(Tj) VGT(25 C)

www.kexin.com.cn Fig.7. Normalised gate trigger current I GT j )/ I GT (25˚C), versus junction temperature T j -50 0 50 100 1500 0.5 1.5 2.5 BT136 Tj / C T2+ G+ T2+ G- T2- G- T2- G+ IGT(Tj) IGT(25 C) Fig.8. Normalised latching current I L j )/ I L (25˚C), versus junction temperature T j -50 0 50 100 1500 0.5 1.5 2.5 TRIAC Tj / C IL(Tj) IL(25 C) Fig.9. Normalised holding current I H j )/ I H (25˚C), versus junction temperature T j -50 0 50 100 1500 0.5 1.5 2.5 TRIAC Tj / C IH(Tj) IH(25C) Fig.10. Typical and maximum on-state characteristic. 0 0.5 1 1.5 20 0.5 1.5 BT134W VT / V IT / A Tj = 125 C typ max Tj = 25 C Vo = 1.0 V Rs = 0.21 Ohms Fig.11. Transient thermal impedance Z th j-sp , versus pulse width t p 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 Zth j-sp (K/W)100 tp P t D unidirectional bidirectional BT134W Fig.12. Typical commutation dV/dt versus junction temperature, parameter commutation dI T should commutate when the dV/dt is below the value on the appropriate curve for pre-commutation dI T /dt. 0 50 100 1501 100 1000 1.83 Tj / C dIcom/dt = 5.1 3.9 2.3 dVcom/dt (V/us) A/ms 1.4 off-state dV/dt limit BT134...G SERIES BT134 SERIES BT134...F SERIES