BT134E

BT134E PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Triacs BT134 series E sensitive gate GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT134- 500E 600E 800E bidirectional switching and phase VDRM Repetitive peak off-state 500 600 800 V control applications, where high voltages sensitivity is required in all four IT(RMS) RMS on-state current 4 4 4 A quadrants. I TSM Non-repetitive peak on-state 25 25 25 A current PINNING - SOT82 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 -800 VDRM Repetitive peak off-state - 500 1 6001 800 V voltages IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 ˚C - 4 A ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge t = 20 ms - 25 A t = 16.7 ms - 27 A I2tI 2t for fusing t = 10 ms - 3.1 A 2s dIT/dt Repetitive rate of rise of ITM = 6 A; IG = 0.2 A; on-state current after dIG /dt = 0.2 A/µs triggering T2+ G+ - 50 A/ µs T2+ G- - 50 A/ µs T2- G- - 50 A/ µs T2- G+ - 10 A/ µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature T1T2 G1 23 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. August 1997 1 Rev 1.200

Philips Semiconductors Product specification Triacs BT134 series E sensitive gate THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-mb Thermal resistance full cycle - - 3.0 K/W junction to mounting base half cycle - - 3.7 K/W R th j-a Thermal resistance in free air - 100 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 2.5 10 mA T2+ G- - 4.0 10 mA T2- G- - 5.0 10 mA T2- G+ - 11 25 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 3.0 15 mA T2+ G- - 10 20 mA T2- G- - 2.5 15 mA T2- G+ - 4.0 20 mA I H Holding current V D = 12 V; IGT = 0.1 A - 2.2 15 mA VT On-state voltage I T = 5 A - 1.4 1.70 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID Off-state leakage current VD = VDRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; - 50 - V/ µs off-state voltage exponential waveform; gate open circuit tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max) ; IG = 0.1 A; - 2 - µs time dI G /dt = 5 A/µs August 1997 2 Rev 1.200

Philips Semiconductors Product specification Triacs BT134 series E sensitive gate Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS) , where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.3. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb . Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 012345 = 180 120 BT136 IT(RMS) / A Ptot / W Tmb(max) / C 125 122 119 116 113 110 107 104 101 -50 0 50 100 1500 BT136 Tmb / C IT(RMS) / A 107 C 10us 100us 1ms 10ms 100ms10 100

1000 BT136

I Tj initial = 25 C max T dI /dt limitT T2- G+ quadrant 0.01 0.1 1 100 BT136 surge duration / s IT(RMS) / A 1 10 100 10000 BT136 Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT136 Tj / C VGT(Tj) VGT(25 C) August 1997 3 Rev 1.200

Philips Semiconductors Product specification Triacs BT134 series E sensitive gate Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5

3 BT136E

IGT(Tj) IGT(25 C) T2+ G+ T2+ G- T2- G- T2- G+ 0 0.5 1 1.5 2 2.5 30 BT136 VT / V IT / A Tj = 125 C Tj = 25 C typ max Vo = 1.27 V Rs = 0.091 ohms -50 0 50 100 1500 0.5 1.5 2.5

3 TRIAC

IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s0.01 0.1

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Zth j-mb (K/W) unidirectional bidirectional tpP t D -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25C) 0 50 100 1501 100 1000 Tj / C dVD/dt (V/us) August 1997 4 Rev 1.200

Philips Semiconductors Product specification Triacs BT134 series E sensitive gate MECHANICAL DATA Dimensions in mm Net Mass: 0.8 g Fig.13. SOT82; pin 2 connected to mounting base. Notes 1. Refer to mounting instructions for SOT82 envelopes. 2. Epoxy meets UL94 V0 at 1/8". 4.58 2.54 max 1.2 2.8 2.3 3.1 2.5 1 23 0.88 max 2.29 15.3 min 11.1 max 3.75 7.8 max 1) Lead dimensions within this zone uncontrolled. 0.5 mounting base August 1997 5 Rev 1.200

Philips Semiconductors Product specification Triacs BT134 series E sensitive gate DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1997 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. August 1997 6 Rev 1.200