BT134 LUGUANG | Alldatasheet
Document overview
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Technical content
http://www.lgesemi.com Revision:20240918-P1 m a i l : l g e @ l g e s e m i . c o m F e a t u r e s ◇The LGE BT134, 4A Ⅳquadrants series triacs ,which can be operated in Ⅳquadrants.As silicon bidirectional device,with NPNPN five-layer structure; singlesided trenching technology,mesa glass passivation process; ◇multi-layer metallized electrode on the back side; ◇High blocking voltage and high temperature stability.
Applications
The LGE BT134 is suitable for inductive load switching operations,also can be used in ON/OFF function applications such as dometic lighting,washing machine, induction motor starting circuits,vacuum cleaners,power tools and other motors such as speed control maker; heating regulation,solid state relay; phases control circuit ; AC motor speed regulation,and so on. Mechanical Data ◇ Moisture Sensitivity: MSL Level 1,per J-STD-020 ◇ Terminals:Matte Tin Finish. Solderable per MIL-STD-202 Method 208 ◇ Case Material：Molded Plastic; ◇ Molding compound meet UL Flammability ClassificationRating 94V-0 ◇ Case:JEDEC TO-126 MAXIMUM RATING Ratings at 25℃ ambient tepmerature unle ss otherwise specified. PARAMETER SYMBOL VALUE UNITS R.M.S. On-State Current BT134 Tc=107℃ IT(RMS) 4 A Non-Repetitive Surge Peak On-State Current(fFull Cycle,Tj initial=25℃) F=50HZ T=20ms I TSM 2 5 A F=60HZ T=16.7ms 27 I2t Value for Fusing tp=10ms I 2t 3.1 A 2s Critical Rate of Rise of On-State Current IG=2×IGT，tr≤100ns F=120HZ Tj=125℃ di/dt 50 A/μs Repetitive peak Off-State voltage Tj=25℃ VDRM/VRRM 400/500/600/800 V Non repetitive surge peak off-state voltage tp=10ms Tj=25℃ VDSM/VRSM V DRM/VRRM+100 V Peak Gate Current tp=20μs Tj=125℃ IGM 2 A Average Gate Power Dissipation Tj=125℃ PG(AV) 0 . 5 W Typical Thermal Resistance(Junction to Ambient) RΘJA 100 ℃/W Typical Thermal Resistance(Junction to Case (AC)) RΘJC 4.1 ℃/W Maximum Operating Junction temperature T J -40~+125 ℃ Storage temperature range T STG -40~+150 ℃ TO-126
http://www.lgesemi.com Revision:20240918-P2 m a i l : l g e @ l g e s e m i . c o m ELECTRICAL CHARACTERISTICS(Ⅳ QUADRANTS) PARAMETER TEST CONDITIONS SYMBOL VALUE UNITS D E Gate Trigger Current VD=12V,RL=100 Ω (ⅠⅡⅢⅣ quadrant) ⅠⅡⅢ IGT MAX 5 10 mA Ⅳ M A X 1 0 2 5 Gate Trigger Voltage All V GT M A X 1 . 5 V Gate Non-Trigger Voltage Tj=125 ℃(ⅠⅡⅢquadrant) VGD M I N 0.2 V Holding Current I T=0.5A I H M A X 1 0 2 0 m A Latching Current =1.2I GT ⅠⅢ Ⅳquadrant IL MAX 10 15 mA Ⅱquadrant MAX 15 20 Critical Rate of Rise of Off-State Voltage VD=2/3VDRM,Tj=125℃ dv/dt MIN 5 50 V/ μs Critical Rate of Rise of Off-State Voltage at Commutation, Tj=125℃ (dv/dt)c MIN 10 10 V/ μs STATIC CHARACTERISTICS PARAMETER TEST CONDITIONS SYMBOL VALUE UNITS Peak On-State Voltage ITM=5.5A,tp=380 μs,Tj=25℃ V TM MAX 1.70 V Threshold Voltage Tj=125 ℃ V TO MAX 0.95 V Dynamic Resistance Tj=125 ℃ Rd MAX 180 mΩ Repetitive Peak Off-Statte Curren VDRM=VRRM Tj=25℃ I DRM M A X 5 μA Tj=125℃ I RRM M A X 1 m A
http://www.lgesemi.com Revision:20240918-P3 m a i l : l g e @ l g e s e m i . c o m RATING AND CHARACTERISTICS CURVES Fig.1.Maximum Power Dissipation Versus on-state current Fig.2. RMS On-state Current Versus TL Fig.3.On-State Characteristics Fig.4.Surge Peak On-state Current Versus Number Cycles Fig.5.Relative Variation Of Gate Trigger Current , Holding Current And Latching Current Versus Junction Temperature (Typical Value)
http://www.lgesemi.com Revision:20240918-P4 m a i l : l g e @ l g e s e m i . c o m PACKAGE OUTLINE DIMENSIONS TO-126 units:mm
ORDERING INFORMATION
126=4A Voltage 600=600V 800=800V Sensitivity and Type D = 5 m A E = 1 0 m A Min Max Min Max A 2.500 2.900 0.098 0.114 A1 1.100 1.500 0.043 0.059 b 0.660 0.860 0.026 0.034 b1 1.170 1.370 0.046 0.054 c 0.450 0.600 0.018 0.024 D 7.400 7.800 0.291 0.307 E 10.600 11.000 0.417 0.433 e e1 4.480 4.680 0.176 0.184 h 0.000 0.300 0.000 0.012 L 15.300 15.700 0.602 0.618 L1 2.100 2.300 0.083 0.091 P 3.900 4.100 0.154 0.161 Φ 3.000 3.200 0.118 0.126 Symbol Dimensions In Millimeters Dimensions In Inches 2.290 TYP 0.090 TYP