BT132

BT132 PHILIPS | Alldatasheet

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Philips Semiconductors Product specification Triacs BT132 series D logic level GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT132- 500D 600D bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These devices IT(RMS) RMS on-state current 1 1 A are intended to be interfaced directly ITSM Non-repetitive peak on-state current 16 16 A to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO92 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 2 2 gate 3 main terminal 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 VDRM Repetitive peak off-state - 500 1 6001 V voltages IT(RMS) RMS on-state current full sine wave; Tlead ≤51 ˚C - 1 A ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge t = 20 ms - 16 A t = 16.7 ms - 17.6 A I2tI 2t for fusing t = 10 ms - 1.28 A 2s dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A; on-state current after dIG /dt = 0.2 A/µs triggering T2+ G+ - 50 A/ µs T2+ G- - 50 A/ µs T2- G- - 50 A/ µs T2- G+ - 10 A/ µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature T1T2 G32 1 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. January 1998 1 Rev 1.000

Philips Semiconductors Product specification Triacs BT132 series D logic level THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-lead Thermal resistance full cycle - - 60 K/W junction to lead half cycle - - 80 K/W R th j-a Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 2.0 5 mA T2+ G- - 2.5 5 mA T2- G- - 2.5 5 mA T2- G+ - 5.0 10 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 1.6 10 mA T2+ G- - 4.5 15 mA T2- G- - 1.2 10 mA T2- G+ - 2.2 15 mA I H Holding current V D = 12 V; IGT = 0.1 A - 1.2 10 mA VT On-state voltage I T = 5 A - 1.4 1.70 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.25 0.4 - V ID Off-state leakage current VD = VDRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; - 5 - V/ µs off-state voltage exponential waveform; R GK = 1 kΩ tgt Gate controlled turn-on ITM = 6 A; VD = VDRM(max) ; IG = 0.1 A; - 2 - µs time dI G /dt = 5 A/µs January 1998 2 Rev 1.000

Philips Semiconductors Product specification Triacs BT132 series D logic level Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS) , where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.3. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 51˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0.2 0.4 0.6 0.8 1.2 1.4 =180 120 BT132D IT(RMS) / A Ptot / W Tmb(max) / C 125 113 101 -50 0 50 100 1500 0.2 0.4 0.6 0.8 1.2 BT132D 51 C Tmb / C IT(RMS) / A 10us 100us 1ms 10ms 100ms10 100 1000 BT132D T / s ITSM / A T ITSM time I Tj initial = 25 C max T T2- G+ quadrant dI /dt limitT 0.01 0.1 1 100 0.5 1.5 2.5 BT132D surge duration / s IT(RMS) / A 10 100 10000 BT136 Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT136 Tj / C VGT(Tj) VGT(25 C) January 1998 3 Rev 1.000

Philips Semiconductors Product specification Triacs BT132 series D logic level Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5

3 BT136D

IGT(Tj) IGT(25 C) 0 0.5 1 1.5 2 2.5 30 BT136 VT / V IT / A Tj = 125 C Tj = 25 C typ max Vo = 1.27 V Rs = 0.091 ohms -50 0 50 100 1500 0.5 1.5 2.5

3 TRIAC

IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 Zth j-sp (K/W)100 tpP t D unidirectional bidirectional BT134W -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25C) 0 50 100 1501 100 1000 Tj / C dVD/dt (V/us) January 1998 4 Rev 1.000

Philips Semiconductors Product specification Triacs BT132 series D logic level MECHANICAL DATA Dimensions in mm Net Mass: 0.2 g Fig.13. TO92 Variant; plastic envelope. Notes 1. Epoxy meets UL94 V0 at 1/8". 0.48 0.40 0.40 min 12.7 min 5.2 max 4.8 max 4.2 max 1.6 2.54 0.66 0.56 123 January 1998 5 Rev 1.000

Philips Semiconductors Product specification Triacs BT132 series D logic level DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.  Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. January 1998 6 Rev 1.000