BT131W PHILIPS | Alldatasheet
Document overview
- Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
- PDF pages: 7
Technical content
Philips Semiconductors Product specification Triacs BT131W series logic level GENERAL DESCRIPTION QUICK REFERENCE DATA Glasspassivated, sensitive gate triacsSYMBOL PARAMETER MAX. MAX. UNIT in a plastic envelope suitable for surface mounting, intended for use in BT131W- 500 600 general purpose bidirectional V DRM Repetitive peak off-state voltages 500 600 V switching and phase control I T(RMS) RMS on-state current 1 1 A applications. These devices are I TSM Non-repetitive peak on-state current 10 10 A intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - SOT223 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 1 2 main terminal 2 3 gate tab main terminal 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 VDRM Repetitive peak off-state - 500 1 6001 V voltages IT(RMS) RMS on-state current full sine wave; Tsp ≤ 108 ˚C - 1 A ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge t = 20 ms - 10 A t = 16.7 ms - 11 A I 2tI 2t for fusing t = 10 ms - 0.5 A 2s dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A; on-state current after dIG /dt = 0.2 A/µs triggering T2+ G+ - 50 A/ µs T2+ G- - 50 A/ µs T2- G- - 50 A/ µs T2- G+ - 10 A/ µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature T1T2 G 1 23 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. July 1998 1 Rev 1.000
Philips Semiconductors Product specification Triacs BT131W series logic level THERMAL RESISTANCES SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-sp Thermal resistance full or half cycle - - 15 K/W junction to solder point R th j-a Thermal resistance pcb mounted; minimum footprint - 156 - K/W junction to ambient pcb mounted; pad area as in fig:14 - 70 - K/W STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT I GT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 0.4 3 mA T2+ G- - 1.3 3 mA T2- G- - 1.4 3 mA T2- G+ - 3.8 7 mA I L Latching current V D = 12 V; IGT = 0.1 A T2+ G+ - 1.2 5 mA T2+ G- - 4.0 8 mA T2- G- - 1.0 5 mA T2- G+ - 2.5 8 mA I H Holding current V D = 12 V; IGT = 0.1 A - 1.3 5 mA VT On-state voltage I T = 2 A - 1.2 1.5 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.2 0.3 - V ID Off-state leakage current VD = VDRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dV D /dt Critical rate of change of VDM = 67% VDRM(max) ; Tj = 125 ˚C; 5 15 - V/ µs off-state voltage exponential waveform; R GK = 1 kΩ tgt Gate controlled turn-on ITM = 1.5 A; VD = VDRM(max) ; IG = 0.1 A; - 2 - µs time dI G /dt = 5 A/µs July 1998 2 Rev 1.000
Philips Semiconductors Product specification Triacs BT131W series logic level Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS) , where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.3. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 108˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0.2 0.4 0.6 0.8 1.2 1.4 = 180 120 BT134W IT(RMS) / A Ptot / W Tsp(max) / C 125 122 119 116 113 110 107 104 -50 0 50 100 1500 0.2 0.4 0.6 0.8 1.2 BT134W Tsp / C IT(RMS) / A 108 C 100
1000 BT134W
I Tj initial = 25 C max T dI /dt limitT T2- G+ quadrant 0.01 0.1 1 100 0.5 1.5 2.0 2.5 BT132D surge duration / s IT(RMS) / A 1 10 100 10000 BT134W Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT136 Tj / C VGT(Tj) VGT(25 C) July 1998 3 Rev 1.000
Philips Semiconductors Product specification Triacs BT131W series logic level Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-sp, versus pulse width tp. Fig.12. Minimum, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5
3 BT131
IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 0.5 1.5
2 BT134W
Tj = 125 C typ max Tj = 25 C Vo = 1.0 V Rs = 0.21 Ohms -50 0 50 100 1500 0.5 1.5 2.5
3 TRIAC
IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 Zth j-sp (K/W)100 tpP t D unidirectional bidirectional BT134W -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25C) 0 50 100 1501 100 1000 Tj / C dVD/dt (V/us) July 1998 4 Rev 1.000
Philips Semiconductors Product specification Triacs BT131W series logic level MOUNTING INSTRUCTIONS Dimensions in mm. Fig.13. soldering pattern for surface mounting SOT223. 3.8 min 6.32.3 4.6 1.5 min 1.5 min 1.5 min (3x) July 1998 5 Rev 1.000
Philips Semiconductors Product specification Triacs BT131W series logic level MECHANICAL DATA Dimensions in mm Net Mass: 0.11 g Fig.14. SOT223 surface mounting package. Notes 1. For further information, refer to Philips publication SC18 " SMD Footprint Design and Soldering Guidelines". Order code: 9397 750 00505. 2. Epoxy meets UL94 V0 at 1/8". 6.7 6.3 3.1 2.9 1 23 2.31.05 0.85 0.80 0.60 4.6 3.7 3.3 7.3 6.7 B A 0.10 0.02 1316 max 1.8 max max 0.32 0.24 (4x) BM0.1 AM0.2 July 1998 6 Rev 1.000
Philips Semiconductors Product specification Triacs BT131W series logic level DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification. Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 7 Rev 1.000