BT131 UTC | Alldatasheet
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UTC UNISONIC TECHNOLOGIES CO., LTD. 1 QW-R401-001,A TRIACS LOGIC LEVEL
DESCRIPTION
Passivated, sensitive gate triaces in a plastic envelope, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers. logic integrated circuits and other low power gate trigger circuits. SYMBOL MT2 MT1 G TO-92 1 : M T 1 2 : G A T E 3 : M T 2 ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Off-State Voltage BT131-500 BT131-600 BT131-800 V DRM 500* 600* 800* V RMS On-State Current Full Sine Wave; Tlead≤51°C IT(RMS) 1 A Non-Repetitive Peak On-State Current (Full Sine Wave; Tj=25°C prior to surge) t=20ms t=16.7ms ITSM 17.6 A Circuit Fusing (t=10ms) I 2t 1.28 A 2s Repetitive Rate of Rise of On-State Current after Triggering ITM=1.5A, IG=0.2A, dIG/dt=0.2A/µs T2+G+ T2+G- T2-G- T2-G+ dI T/dt A/µs Peak Gate Voltage V GM 5 V Peak Gate Current I GM 2 A Peak Gate Power P GM 5 W Average Gate Power (over any 20ms period) P G(AV) 0.5 W Operating Junction Temperature Tj 125 °C Storage temperature Tstg -40~150 °C *Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/ µs.
UTC UNISONIC TECHNOLOGIES CO., LTD. 2 QW-R401-001,A THERMAL RESISTANCES PARAMETER SYMBOL MIN TYP MAX UNIT Thermal Resistance Junction to Lead Full Cycle Half Cycle Rth j-lead K/W Thermal Resistance junciton to Ambient (PCB mounted ;lead length=4mm) Rth j-lead 150 K/W ELECTRICAL CHARACTERISTICS (Tj=25°C, unless otherwise specified) PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT STATIC CHARACTERISTICS Gate Trigger Current I GT V D=12V, IT=0.1A T2+G+ T2+G- T2-G- T2-G+ 0.4 1.3 1.4 3.8 mA Latching Current I L V D=12V, IGT=0.1A T2+G+ T2+G- T2-G- T2-G+ 1.2 4.0 1.0 2.5 mA On-State Voltage Latching Current V T I T=2.0A 1.2 1.5 V Gate Trigger Voltage V GT V D=12V, IT=0.1A VD=400V, IT=0.1A, Tj=125°C 0.2 0.7 0.3 1.5 V Off-state Leakage Current I D V D=VDRM(max), Tj=125°C 0.1 0.5 mA DYNAMIC CHARACTERISTICS Holding Current I H V D=12V, IGT=0.1A 1.3 5 mA Critical Rate of Rise ofoff-state Voltage dV D/dt V DM=67% VDRM(max), Tj=125°C Exponential waveform,RGK=1kΩ 5 15 V/ µs Gate Controlled Turn-on Time t gt I TM=1.5A,VD=VDRM(max), IG=0.1A dIG/dt=5A/µs 2 µs
UTC UNISONIC TECHNOLOGIES CO., LTD. 5 QW-R401-001,A UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.