BT131 LUGUANG | Alldatasheet

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GENERAL DESCRIPTION QUICK REFERENCE DATA Glass passivated, sensitive gate SYMBOL PARAMETER MAX. MAX. UNIT triacs in a plastic envelope, intended for use in general purpose BT131- 500 600 bidirectional switching and phase VDRM Repetitive peak off-state voltages 500 600 V control applications. These devices IT(RMS) RMS on-state current 1 1 A are intended to be interfaced directly ITSM Non-repetitive peak on-state current 16 16 A to microcontrollers, logic integrated circuits and other low power gate trigger circuits. PINNING - TO92 PIN CONFIGURATION SYMBOL PIN DESCRIPTION 1 main terminal 2 2 gate 3 main terminal 1 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT -500 -600 VDRM Repetitive peak off-state - 500 1 6001 V voltages IT(RMS) RMS on-state current full sine wave; Tlead ≤51 ˚C - 1 A ITSM Non-repetitive peak full sine wave; Tj = 25 ˚C prior to on-state current surge t = 20 ms - 16 A t = 16.7 ms - 17.6 A I2tI 2t for fusing t = 10 ms - 1.28 A2s dIT/dt Repetitive rate of rise of ITM = 1.5 A; IG = 0.2 A; on-state current after dIG /dt = 0.2 A/µs triggering T2+ G+ - 50 A/µs T2+ G- - 50 A/µs T2- G- - 50 A/µs T2- G+ - 10 A/µs IGM Peak gate current - 2 A VGM Peak gate voltage - 5 V PGM Peak gate power - 5 W PG(AV) Average gate power over any 20 ms period - 0.5 W Tstg Storage temperature -40 150 ˚C Tj Operating junction - 125 ˚C temperature T1T2 G32 1 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. BT131 Series Triacs http://www.luguang.cn mail:lge@luguang.cn

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT R th j-lead Thermal resistance full cycle - - 60 K/W junction to lead half cycle - - 80 K/W R th j-a Thermal resistance pcb mounted;lead length = 4mm - 150 - K/W junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT IGT Gate trigger current V D = 12 V; IT = 0.1 A T2+ G+ - 0.4 3 mA T2+ G- - 1.3 3 mA T2- G- - 1.4 3 mA T2- G+ - 3.8 7 mA IL Latching current VD = 12 V; IGT = 0.1 A T2+ G+ - 1.2 5 mA T2+ G- - 4.0 8 mA T2- G- - 1.0 5 mA T2- G+ - 2.5 8 mA I H Holding current VD = 12 V; IGT = 0.1 A - 1.3 5 mA VT On-state voltage IT = 2.0 A - 1.2 1.5 V VGT Gate trigger voltage V D = 12 V; IT = 0.1 A - 0.7 1.5 V VD = 400 V; IT = 0.1 A; Tj = 125 ˚C 0.2 0.3 - V ID Off-state leakage current VD = VDRM(max) ; Tj = 125 ˚C - 0.1 0.5 mA DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD /dt Critical rate of rise of VDM = 67% VDRM(max) ; Tj = 125 ˚C; 5 15 - V/µs off-state voltage exponential waveform; RGK = 1 kΩ tgt Gate controlled turn-on ITM = 1.5 A; VD = VDRM(max) ; IG = 0.1 A; - 2 - µs time dIG /dt = 5 A/µs BT131 Series Triacs http://www.luguang.cn mail:lge@luguang.cn

Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS) , where α = conduction angle. Fig.2. Maximum permissible non-repetitive peak on-state current ITSM , versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.3. Maximum permissible non-repetitive peak on-state current ITSM , versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.4. Maximum permissible rms current IT(RMS) , versus lead temperature Tlead. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS) , versus surge duration, for sinusoidal currents, f = 50 Hz; Tlead ≤ 51˚C. Fig.6. Normalised gate trigger voltage VGT (Tj)/ VGT (25˚C), versus junction temperature Tj. 0.2 0.4 0.6 0.8 1.2 1.4 =180 120 BT132D IT(RMS) / A Ptot / W Tmb(max) / C 125 113 101 -50 0 50 100 1500 0.2 0.4 0.6 0.8 1.2 BT132D 51 C Tlead / C IT(RMS) / A 10us 100us 1ms 10ms 100ms10 100 1000 BT132D T / s ITSM / A T ITSM time I Tj initial = 25 C max T T2- G+ quadrant dI /dt limitT 0.01 0.1 1 100 0.5 1.5 2.0 2.5 BT132D surge duration / s IT(RMS) / A 10 100 10000 BT136 Number of cycles at 50Hz ITSM / A T ITSM time I Tj initial = 25 C max T -50 0 50 100 1500.4 0.6 0.8 1.2 1.4 1.6 BT136 Tj / C VGT(Tj) VGT(25 C) BT131 Series Triacs http://www.luguang.cn mail:lge@luguang.cn

Fig.7. Normalised gate trigger current IGT (Tj)/ IGT (25˚C), versus junction temperature Tj. Fig.8. Normalised latching current IL(Tj)/ IL(25˚C), versus junction temperature Tj. Fig.9. Normalised holding current IH (Tj)/ IH (25˚C), versus junction temperature Tj. Fig.10. Typical and maximum on-state characteristic. Fig.11. Transient thermal impedance Zth j-lead, versus pulse width tp. Fig.12. Typical, critical rate of rise of off-state voltage, dVD /dt versus junction temperature Tj. -50 0 50 100 1500 0.5 1.5 2.5

3 BT131

IGT(Tj) IGT(25 C) 0 0.5 1 1.5 20 0.5 1.5

2 BT134W

Tj = 125 C typ max Tj = 25 C Vo = 1.0 V Rs = 0.21 Ohms -50 0 50 100 1500 0.5 1.5 2.5

3 TRIAC

IL(Tj) IL(25 C) 10us 0.1ms 1ms 10ms 0.1s 1s 10s tp / s 0.01 0.1 Zth j-sp (K/W)100 tpP t D unidirectional bidirectional BT134W -50 0 50 100 1500 0.5 1.5 2.5 IH(Tj) IH(25C) 0 50 100 1501 100 1000 Tj / C dVD/dt (V/us) BT131 Series Triacs http://www.luguang.cn mail:lge@luguang.cn

Net Mass: 0.2 g Fig.13. TO92 ; plastic envelope. Notes 1. Epoxy meets UL94 V0 at 1/8". 0.48 0.40 0.40 min 12.7 min 5.2 max 4.8 max 4.2 max 1.6 2.54 0.66 0.56 1 2 3 BT131 Series Triacs http://www.luguang.cn mail:lge@luguang.cn