BT131_V01 LUGUANG | Alldatasheet

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1.terminal 1 2.terminal 2 3.gate 4.terminal 2 1.80 (max) 0.02 ~ 0.1 4.60 (typ) 10b 7.0±0.3 3.50±0.2 6.50±0.2 3.00±0.1 2.30 (typ) SOT-223 Unit:mm 1 2 3 0.250 Gauge Plane 0.84 (max) 0.75 (min) Ƶ Features ƽ VDRM İ 600 V (BT131-600) ƽ VDRM İ 800 V (BT131-800) ƽ IT(RMS) İ 1 A ƽ ITSM İ 12.5 A G Ƶ Absolute Maximum Ratings Symbol Rating Unit BT131-600 *1 600 BT131-800 800 IT(RMS) 1 t=20ms 12.5 t=16.7ms 13.8 Circuit Fusing Considerations t = 10ms I2t 1.28 A2s T2+ G+ 50 T2+ G- 50 T2- G- 50 T2- G+ 10 IGM 2A PGM 5 PG(AV) 0.1 Rth j-a 150 ć/W TJ 125 Tstg -40 ~ 150 *1: Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/ μs. *2: Mounted on a printed-circuit board Peak Gate Current Peak Gate Power Average Gate Power Junction Temperature Storage Temperature Range Non-Repetitive Peak on-state Current Thermal Resistance Junction to Ambient *2 Parameter Repetitive Peak off-state Voltage RMS on-state Current VDRM V Rate of Rise of on-state Current ITM = 1.5 A; I G = 20mA; dIG/dt = 200 mA/μs dIT/dt A/μs ć ITSM W A http://www.lgesemi.com Revision:20240722-P1 mail:lge@lgesemi.com

Exponential waveform; RGK=1kȍ; see Figure 8 10 20 Rate of Change of Commutating Current dV COM/dt V DM = 400 V; Tj = 125ć; dIcom/dt = 0.5 A/ms 2 tgt ITM =1.5A; VD=VDRM(max); IG=100mA; dIG/dt=5A/μs 2 μs On-state Voltage Gate Trigger Voltage Off-state Current Rate of Rrise of off-state Voltage Gate Controlled turn-on time mA V V/μs IGT Gate Trigger Current V D = 12 V; IT = 100mA; see Figure 4 Latching Current V D = 12 V; IT = 100mA; see Figure 6IL VGT Parameter Repetitive Peak off-state Voltage VDRM IDRM=50μAV Holding Current Ƶ Marking Marking BT131 K**** Ƶ Electrical Characteristics (Tj = 25ć, unless otherwise noted.) Symbol Test Conditions Min Typ. Max Unit BT131-600 600 BT131-800 800 T2+ G+ 0.4 3 T2+ G- 1.3 3 T2- G- 1.4 3 T2- G+ 3.8 7 T2+ G+ 1.2 5 T2+ G- 48 T2- G- 15 T2- G+ 2.5 8 IH VD = 12 V; IT = 100mA; see Figure 7 1.3 5 VT IT = 1.4 A; see Figure 5 1.2 1.5 IT = 10 mA; gate open circuit, see Figure 3; VD = 12 V; IGT = 100 mA 0.7 1.5 IT = 10 mA; gate open circuit, see Figure 3; VD = 400 V; IGT = 100 mA;Tj = 125ć 0.2 0.3 ID VD = VDRM(max); Tj = 125 °C 0.1 0.5 mA dVD/dt VDM=67% VDRM(max); Tj=125 ć; Triacs BT131 Series http://www.lgesemi.com Revision:20240722-P2 mail:lge@lgesemi.com

Ƶ Typical Characterisitics f=5 0H z ; Tlead ›51.2 lead = 51.2 ¥ Fig 1. RMS on-state current as a function of surge duration, for sinusoidal currents; maximum values Fig 2. RMS on-state current as a function of lead temperature; maximum values IT(RMS) (A) surge duration (s) 102 101101 0.4 0.8 1.2 50 0 50 100 150 Tlead (¢C) IT(RMS) (A) 51.2 ¢C Tj (¢C)50 150 10005 0 0.8 1.2 1.6 0.4 VGT(Tj) VGT(25¢C) Tj (¢C) 50 150 10005 0 IGT(Tj) IGT(25¢C) (1) (2) (3) (4) (1) (2) (3) (4) Triacs BT131 Series http://www.lgesemi.com Revision:20240722-P3 mail:lge@lgesemi.com

Vo =0 . 9 2V Rs =0 . 4Ȥ. (1) T j = 125 ¥ ; typical values (2) T j = 125 ¥ ; maximum values (3) T j =2 5 ¥ ; maximum values Fig 5. On-state current characteristics junction temperature VT (V) 201 . 6 0.8 1.20.4 0.8 1.2 0.4 1.6 IT (A) (1) (2) (3) Tj (¢C) 50 150 10005 0 IL IL(25¢C) Tj (¢C) 50 150 10005 0 IH IH(25¢C) Tj (¢C)0 150 10050 102 103 dVD/dt (V/Ȱs) Fig 7. Normalized holding cu rrent as a function of junction temperature Fig 8. Rate of rise of off-state voltage as a function of junction temperature; minimum values Fig 6. Normalized latching current as a function of Triacs BT131 Series http://www.lgesemi.com Revision:20240722-P4 mail:lge@lgesemi.com