BT131-500B KEXIN | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 2

Technical content

www.kexin.com.cn 1 Triacs T1T2 G BT131-500B ■ Features

  • Repetitive peak off-state voltages :VDRM=500V
  • RMS on-state current :IT(RMS)=1A
  • Non-repetitive peak on-state current :ITSM=16A ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Testconditons Unit Repetitive peak off-state voltages VDRM V RMS on-state current IT(RMS) full sine wave; Tmb ≤ 51 ℃ A full sine wave; Tj = 25℃ prior to surge t = 20 ms A t = 16.7 ms A I2t for fusing I2t t = 10 ms A2S IT M = 1.5 A; IG = 0.2 A;dIG/dt = 0.2 A/μs T2+ G+ A/μs T2+ G- A/μs T2- G- A/μs T2- G+ A/μs Peak gate current IGM A Peak gate voltage VGM V Peak gate power PGM W Average gate power PG(AV) over any 20 ms period W Storage temperature Tstg ℃ Operating junction temperature Tj ℃ full cycle K/W half cycle K/W Thermal resistance junction to ambient Rth j-a in free air K/W BT131-500 500 Non-repetitive peak on-state current ITSM 17.6 Dit / dt Repetitive rate of rise of on-state current after triggering 0.5 150 Rth j-mb 1.28 Thermal resistance junction to mounting base 80 -40 to 150 125 ThyristorSMD Type SOT-223 Unit: mm 3.00+0.1 -0.1 0.70+0.1 -0.1 2.9 4.6 6.50+0.2 -0.2 3.50+0.2 -0.2 0.90+0.2 -0.2 7.00+0.3 -0.3 1.65+0.15 -0.15 0.1max 0.90+0.05 -0.05 1 2 1 main terminal1 3 gate 2 main teminal 2

www.kexin.com.cn 2 e I ■ Electrical Characteristics Ta = 25℃ Typ VD = 12 V; IT = 0.1 A T2+ G+ 0.4 mA T2+ G- 1.3 mA T2- G- 1.4 mA T2- G+ 4.0 mA VD = 12 V; IGT = 0.1 A T2+ G+ 1.2 mA T2+ G- 4.0 mA T2- G- 1.0 mA T2- G+ 2.5 mA Holding current IH VD = 12 V; IGT = 0.1 A 1.3 mA On-state voltage VT IT = 2.0 A 1.0 V VD = 12 V; IT = 0.1 A V VD = 400 V; IT = 0.1 A;Tj = 125℃ V Off-state leakage current ID VD = VDR M(max);Tj = 125℃ 0.1 mA Critical rate of rise of off-state voltage dVD /dt VDM =67% VDRM(max);Tj = 125 ℃ ; exponential waveform;RGK=1KΩ 20 V/μs Gate controlled turn-on time tgt ITM =1.5 A; VD = VDRM(max);IG = 0.1 A; dIG/dt = 5 A/μs; 2 μs 0.3 0.2 … E Min 1.5 0.5 Parameter Symbol Testconditons Unit ILLatching current VGTGate trigger voltage IGTGate trigger current Max BT131-500B SMD Type Thyristor 0.7 1.5