BT100-8 KODENSHI | Alldatasheet
Document overview
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Technical content
Features
◇ Repetitive Peak Off-State Voltage : 600V ◇ R.M.S On-State Current (IT(RMS)=0.8 A) ◇ Low On-State Voltage (1.2V(Typ.)@ITM) General Description Sensitive triggering SCR is suitable for the application where gate current limited such as small motor control, gate driver for large SCR, sensing and detecting circuits. Absolute Maximum Ratings (TJ=25 ℃ unless otherwise specified) Symbol Parameter Condition Ratings Units VDRM Repetitive Peak Off-state Voltage 600 V IT(AV) Average On-State Current Half Sine Wave : TC =74℃ 0.5 A IT(RMS) R.M.S On-State Current All Conduction Angle 0.8 A ITSM Surge On-State Current 1/2 Cycle, 60Hz, Sine Wave Non- Repetitive 10 A I2 t I²t for Fusing t = 8.3ms 0.415 A² S PGM Forward Peak Gate Power Dissipation TA=25℃, Pulse Width≤1.0㎲ 2 W PG(AV) Forward Average Gate Power Dissipation TA=25℃, t=8.3ms 0.1 W IFGM Forward Peak Gate Current 1 A VRGM Reverse Peak Gate Voltage 5.0 V TJ Operating Junction Temperature -40 ~ 125 ℃ TSTG Storage Temperature -40 ~ 150 ℃
Electrical Characteristics
VAK=VDRM, or VRRM:RGK=1000Ω Tc=25℃ Tc=125℃ 200 ㎂ VTM Peak On-State Voltage(1) (ITM=1A, Peak) ━ 1.2 1.7 V IGT Gate Trigger Current(2) VAK=6V, RL=100Ω Tc=25℃ Tc=-40℃ 200 500 ㎂ VGT Gate Trigger Voltage(2) VD=7V, RL=100Ω Tc=25℃ Tc=-40℃ 0.8 1.2 V VGD Non-Trigger Gate Voltage(1) VAK=12V, RL=100Ω Tc=125℃ 0.2 ━ ━ V dv/dt Critical Rate of Rise Off-State Voltage VD=Rated VDRM, Exponential wave-form RGK=1000Ω TJ=125℃ 500 800 ━ V/㎲ di/dt Critical Rate of Rise Off-State Voltage ITM=2A ; Ig=10mA ━ ━ 50 A/㎲ VAK=12V, Gate Open IH Holding Current Initiating Current=50mA Tc=25℃ Tc=-40℃ 5.0 10 mA Rth(j-c) Thermal Impedance Junction to case ━ ━ 60 ℃/W Rth(j-a) Thermal Impedance Junction to Ambient ━ ━ 150 ℃/W ※ Notes : 1. Pulse Width ≤1.0ms, Duty cycle ≤1% 2. Does not include RGK in measurement. BT100-8
- TO-92 BT100-8