BT08D-600B FS | Alldatasheet
Document overview
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Technical content
Features
- Blocking Voltage to 600 V
- On-State Current Rating of 8A RMS at 100℃
- Uniform Gate Trigger Currents in Three Quadrants
- High Immunity to dV/dt-1500V/us minimum at 125℃
- Minimizes Snubber Networks for Protection
- Industry Standard TO-252 Package
- High Commutating dI/dt- 4.0A/ms minimum at 125℃
- These are Pb-Free Devices mboSymbol m rParameter Value U tUnit IT(RMS) RMS on-state current(full since wave) TO-252 TC=110℃ 8 A ITSM Non repetitive surge peak on-state current(full cycle, Tj initial=25℃) F=50Hz t=20ms 80 A F=60Hz t=16.7ms 84 I2t I 2t Value for fusing tp=10ms 36 A 2s DI/DT Critical rate of rise of on-state current IG=2 XIGT,tr≤100ns F=120Hz Tj=125℃ 50 A/us IGM Peak gate current tp=20us Tj=125 ℃ 4 A PG(AV) Average gate power dissipation Tj=125℃ 1 W Tstg Tj Storage junction temperature range -40 to +150 Operating junction temperature range -40 to +125
1 ANODE (T1)
2 ANODE (T2)
3 GATE
D-PAK (TO-252) DIM MILLIMETERS A B C D F H I J L 6 50 ± 0 2 5 60 ± 0 2 5 20 ± 0 2 1 50 ± 0 2 2 70 ± 0 2 2 30 ± 0 1 1 00 MAX 2 30 ± 0 2 0 5 ± 0 1 0 50 ± 0 10 E 1 6 ± 0 2O A C DBE I J Q H F F O L 1 2 3 0 95 MAXQ
- 08. 12 2/5 BT08D-600B Revision No : 0 ect iElectrical isCharacteristics (Tj=25℃,unless otherwise specified) SnubberlessTMTM and Logic L evel(3 quadrants) oSymbol Test cond itions nQuadrant iUnit IGT(1) VD=12V R L=30Ω Ⅰ-Ⅱ-Ⅲ MAX 50 mA VGT MAX 1.3 V VGD VD=VDRM RL=3.3KΩTj=125℃ MIN 0.2 V IH(2) IT= 100mA MAX 50 mA IL IG=1.2IGT MAX mA Ⅱ 80 Dv / Dt(2) VD=67%V DRM Gate open Tj=125℃ MIN 1000 V/us (Dl/dt)c(2) (Dv/dt)c=0.1 V/us Tj=125℃ MIN A/ms(Dv/dt)c=10V/us Tj=125℃ - Without snubber Tj=125℃ 7 Ⅰ-Ⅱ-Ⅲ Ⅳ- Ⅰ-Ⅱ-Ⅲ Ⅳ- Ⅰ-Ⅱ-Ⅲ Ⅳ- Standard (4Quadrants) Sy lSymbol TTest co d t iconditions Qu tQuadrant U iUnit IGT(1) VD=12V R L=30Ω Ⅰ-Ⅱ-Ⅲ MAX 100 mA VGT ALL MAX 1.3 V VGD VD=VDRM RL=3.3K ΩTj=125℃ ALL MIN 0.2 V IH(2) IT= 500mA MAX 50 mA IL IG=1.2IGT Ⅰ-Ⅲ- Ⅳ MAX mA Ⅱ 100 (Dl/dt)(2) VD=67%VDRM Gate open Tj=125℃ MIN 400 V/us (Dl/dt)c(2) (Dv/dt)c=3.5 A/ms Tj=125℃ MIN 10 V/us Static Characteristics b lSymbol Test co dconditions uValue Unit VTM(2) ITM=11A tp=380us TJ=25℃ MAX 1.55 V Vto(2) Threshold voltage TJ=125℃ MAX 0.85 V Rd(2) Dynamic resistance TJ=125 ℃ MAX 50 mΩ IDRM VDRM=VRRM TJ=25℃ MAX 5 uA IRRM TJ=125℃ 1 mA VDRM/VRRM Voltage TJ=25℃ MIN 600 V Note 1: minimum IGT isguaranted at 5% of IGT max Note 2: for both polarities of A2 referenced to A1 BT08D-600B BT08D-600B
2016.08. 12 3/5 BT08D-600B Revision No : 0 + Current + Voltage VTM IH Symbol Parameter VDRM Peak Repetitive Forward Off State Voltage IDRM Peak Forward Blocking Current VRRM Peak Repetitive Reverse Off StateVoltage IRRM Peak ReverseBlockingCurrent Voltage Current Characteristic of Triacs (Bidirectional Device) IDRM at VDRM on state off state IRRM at VRRM Quadrant 1 Main Terminal 2 + Quadrant 3 MainTerminal 2 − VTM IH VTM Maximum On State Voltage IH Holding Current MT1 (+) IGT GATE (+) MT2 REF MT1 (−) IGT GATE (+) MT2 REF MT1 (+) IGT GATE (−) MT2 REF MT1 (−) IGT GATE (−) MT2 REF MT2 NEGATIVE (Negative Half Cycle) MT2 POSITIVE (Positive Half Cycle) V I t n a r d a u QI I I t n a r d a u Q I t n a r d a u QI I t n a r d a u Q Quadrant Definitions for a Triac IGT − + IGT All polarities are referenced to MT1. With in−phase signals (using standard AC lines) quadrants I and III are used.
- 08. 12 4/5 BT08D-600B Revision No : 0 Descri ption
- 08. 12 5/5 BT08D-600B Revision No : 0 Descrip tion