BSZ110N08NS5 INFINEON | Alldatasheet

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MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSª5Power-Transistor,80V BSZ110N08NS5 DataSheet Rev.2.1 Final PowerManagement&Multimarket

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet (enlarged source interconnection) TSDSON-8FL 8 D 7 D 6 D 5 D S 1 S 2 S 3 G 4 1Description

Features

  • Idealforhighfrequencyswitchingandsync.rec.
  • OptimizedtechnologyforDC/DCconverters
  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowon-resistanceRDS(on)
  • N-channel,normallevel
  • 100%avalanchetested
  • Pb-freeplating;RoHScompliant
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Halogen-freeaccordingtoIEC61249-2-21
  • Highersolderjointreliabilitywithenlargedsourceinterconnection Table1KeyPerformanceParameters Parameter Value Unit VDS 80 V RDS(on),max 11.0 mΩ ID 40 A Qoss 19 nC QG(0V..10V) 15 nC Type/OrderingCode Package Marking RelatedLinks BSZ110N08NS5 PG-TSDSON-8 FL 110N08N - 1) J-STD20 and JESD22

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet TableofContents

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID

33 A TC=25°C

TC=100°C Pulsed drain current1) ID,pulse - - 160 A TC=25°C Avalanche energy, single pulse2) EAS - - 40 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot - - 50 W TC=25°C Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - 1.5 2.5 K/W - Device on PCB, 6 cm2 cooling area3) RthJA - - 60 K/W - 1) See figure 3 for more detailed information 2) See figure 13 for more detailed information 3) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 80 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=22µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=80V,VGS=0V,Tj=25°C VDS=80V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 1 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 9.6 13.4 11.0 16.3 mΩ VGS=10V,ID=20A VGS=6V,ID=5A Gate resistance RG - 1.4 2 Ω - Transconductance gfs 17 33 - S |VDS|>2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance Ciss - 1000 1300 pF VGS=0V,VDS=40V,f=1MHz Output capacitance1) Coss - 180 235 pF VGS=0V,VDS=40V,f=1MHz Reverse transfer capacitance1) Crss - 11 19 pF VGS=0V,VDS=40V,f=1MHz Turn-on delay time td(on) - 9 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 3 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 15 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=40V,VGS=10V,ID=20A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 4.9 - nC VDD=40V,ID=20A,VGS=0to10V Gate to drain charge1) Qgd - 3.3 5 nC VDD=40V,ID=20A,VGS=0to10V Switching charge Qsw - 5.4 - nC VDD=40V,ID=20A,VGS=0to10V Gate charge total Qg - 15 18.5 nC VDD=40V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 4.9 - V VDD=40V,ID=20A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 13 - nC VDS=0.1V,VGS=0to10V Output charge1) Qoss - 19 26 nC VDD=40V,VGS=0V 1) Defined by design. Not subject to production test 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continous forward current IS - - 40 A TC=25°C Diode pulse current IS,pulse - - 160 A TC=25°C Diode forward voltage VSD - 0.88 1.2 V VGS=0V,IF=20A,Tj=25°C Reverse recovery time1) trr - 36 72 ns VR=40V,IF=20A,diF/dt=100A/µs Reverse recovery charge1) Qrr - 36 72 nC VR=40V,IF=20A,diF/dt=100A/µs 1) Defined by design. Not subject to production test

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 120 160 10 V 7 V 6 V 5.5 V 5 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 100 5 V 5.5 V 6 V 7 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 gfs=f(ID);Tj=25°C

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 max typ RDS(on)=f(Tj);ID=20A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 220 µA 22 µA VGS(th)=f(Tj);VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 100 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.5 1.0 1.5 2.0 2.5 100 101 102 103 25 °C 150 °C 25 °C, max 150 °C, max IF=f(VSD);parameter:Tj

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 20 V 40 V 60 V VGS=f(Qgate);ID=20Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet 6PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches

OptiMOSª5Power-Transistor,80V BSZ110N08NS5 Rev.2.1,2014-05-05Final Data Sheet RevisionHistory BSZ110N08NS5 Revision:2014-05-05,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2014-05-05 Release of Final Version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2014InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.