BSZ063N04LS6ATMA1 INFINEON | Alldatasheet

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Technical content

Features

  • Optimizedforsynchronousapplication
  • Verylowon-resistanceRDS(on)
  • 100%avalanchetested
  • Superiorthermalresistance
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21
  • 175°Crated Table1KeyPerformanceParameters Parameter Value Unit VDS 40 V RDS(on),max 6.3 mΩ ID 40 A Qoss 10.2 nC QG(0V..10V) 9.5 nC QG(0V..4.5V) 4.6 nC Type/OrderingCode Package Marking RelatedLinks BSZ063N04LS6 PG-TSDSON-8 FL 63N04L6 - 1) J-STD20 and JESD22

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet TableofContents

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C, RTHJA=60°C/W1) Pulsed drain current2) ID,pulse - - 160 A TC=25°C Avalanche energy, single pulse3) EAS - - 25 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot

2.5 W TC=25°C

TA=25°C,RTHJA=60°C/W1) Operating and storage temperature Tj,Tstg -55 - 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case, bottom RthJC - - 4 °C/W - Thermal resistance, junction - case, top RthJC - - 20 °C/W - Device on PCB, 6 cm² cooling area RthJA - - 60 °C/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 40 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.3 - 2.3 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=40V,VGS=0V,Tj=25°C VDS=40V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 5.1 7.0 6.3 8.8 mΩ VGS=10V,ID=20A VGS=4.5V,ID=20A Gate resistance RG - 2.3 - Ω - Transconductance gfs - 64 - S |VDS|≥2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 650 - pF VGS=0V,VDS=20V,f=1MHz Output capacitance1) Coss - 210 - pF VGS=0V,VDS=20V,f=1MHz Reverse transfer capacitance1) Crss - 12 - pF VGS=0V,VDS=20V,f=1MHz Turn-on delay time td(on) - 3 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Rise time tr - 1 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Turn-off delay time td(off) - 10 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Fall time tf - 2 - ns VDD=20V,VGS=10V,ID=20A, RG,ext=1.6Ω Table6Gatechargecharacteristics2) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 1.9 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge at threshold Qg(th) - 1.0 - nC VDD=20V,ID=20A,VGS=0to10V Gate to drain charge1) Qgd - 1.3 - nC VDD=20V,ID=20A,VGS=0to10V Switching charge Qsw - 2.2 - nC VDD=20V,ID=20A,VGS=0to10V Gate charge total1) Qg - 9.5 - nC VDD=20V,ID=20A,VGS=0to10V Gate plateau voltage Vplateau - 2.9 - V VDD=20V,ID=20A,VGS=0to10V Gate charge total Qg - 4.6 - nC VDD=20V,ID=20A,VGS=0to4.5V Gate charge total, sync. FET Qg(sync) - 3.9 - nC VDS=0.1V,VGS=0to4.5V Output charge1) Qoss - 10.2 - nC VDD=20V,VGS=0V 1) Defined by design. Not subject to production test. 2) See ″Gate charge waveforms″ for parameter definition

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 38 A TC=25°C Diode pulse current IS,pulse - - 160 A TC=25°C Diode forward voltage VSD - 0.85 1 V VGS=0V,IF=20A,Tj=25°C Reverse recovery time1) trr - 13 - ns VR=20V,IF=20A,diF/dt=400A/µs Reverse recovery charge1) Qrr - 21 - nC VR=20V,IF=20A,diF/dt=400A/µs 1) Defined by design. Not subject to production test.

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 100 125 150 175 200 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 125 150 175 200 package limit silicon limit ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-2 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-5 10-4 10-3 10-2 10-1 100 10-1 100 101 single pulse 0.01 0.02 0.05 0.1 0.2 0.5 ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 100 120 140 160 4.5 V 5 V 10 V 4 V 3.5 V 3 V 2.8 V ID=f(VDS),Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 3 V 3.5 V 4 V 4.5 V 5 V 10 V RDS(on)=f(ID),Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 100 120 140 160 175 °C 25 °C ID=f(VGS),|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.drain-sourceonresistance VGS[V] RDS(on)[mΩ ] 175 °C 25 °C RDS(on)=f(VGS),ID=20A;parameter:Tj

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet Diagram9:Normalizeddrain-sourceonresistance Tj[°C] RDS(on)(normalizedto25°C) -80 -40 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 RDS(on)=f(Tj),ID=20A,VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -80 -40 120 160 200 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2500 µA 250 µA VGS(th=f(Tj),VGS=VDS;parameter:ID Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.00 0.25 0.50 0.75 1.00 1.25 1.50 100 101 102 103 25 °C 25 °C, max 175 °C 175 °C, max IF=f(VSD);parameter:Tj

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 10-1 100 101 102 25 °C 100 °C 150 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj,start Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 8 V 20 V 32 V VGS=f(Qgate),ID=20Apulsed,Tj=25°C;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -80 -40 120 160 200 VBR(DSS)=f(Tj);ID=1mA Diagram Gate charge waveforms

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet 5PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches

OptiMOSTM6Power-Transistor,40V BSZ063N04LS6 Rev.2.0,2018-06-04Final Data Sheet RevisionHistory BSZ063N04LS6 Revision:2018-06-04,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2018-06-04 Release of final version Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2018InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.