BSZ0501NSIATMA1 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 11

Technical content

Features

  • Optimizedforhighperformancebuckconverters
  • MonolithicintegratedSchottky-likediode
  • Verylowon-resistanceRDS(on)@VGS=4.5V
  • 100%avalanchetested
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 30 V RDS(on),max 2.0 mΩ ID 123 A QOSS 18 nC QG(0V..4.5V) 11.4 nC Type/OrderingCode Package Marking RelatedLinks BSZ0501NSI PG-TSDSON-8 FL 0501NSI - 1) J-STD20 and JESD22

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet TableofContents

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet 1Maximumratings atTA=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current1) ID 123 110 A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=10V,TA=25°C,RthJA=60K/W2) Pulsed drain current3) ID,pulse - - 492 A TC=25°C Avalanche current, single pulse4) IAS - - 20 A TC=25°C Avalanche energy, single pulse EAS - - 40 mJ ID=20A,RGS=25Ω Gate source voltage VGS -20 - 20 V - Power dissipation Ptot 2.1 - W TC=25°C TA=25°C,RthJA=60K/W2) Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 2Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 2.5 K/W - Device on PCB, 6 cm2 cooling area2) RthJA - - 60 K/W - 1) Rating refers to the product only with datasheet specified absolute maximum values, maintaining case temperature as specified. For other case temperatures please refer to Diagram 2. De-rating will be required based on the actual environmental conditions. 2) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 3) See Diagram 3 for more detailed information 4) See Diagram 13 for more detailed information

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet 3Electricalcharacteristics atTj=25°C,unlessotherwisespecified Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 30 - - V VGS=0V,ID=10mA Breakdown voltage temperature coefficient dV(BR)DSS/dTj - 15 - mV/K ID=10mA,referencedto25°C Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.5 - mA VDS=20V,VGS=0V,Tj=25°C VDS=24V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 2.1 1.7 2.5 2.0 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG - 1.4 2.3 Ω - Transconductance gfs 55 110 - S |VDS|>2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 1500 2000 pF VGS=0V,VDS=15V,f=1MHz Output capacitance1) Coss - 540 730 pF VGS=0V,VDS=15V,f=1MHz Reverse transfer capacitance Crss - 36 - pF VGS=0V,VDS=15V,f=1MHz Turn-on delay time td(on) - 4 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 4 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 22 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 3 - ns VDD=15V,VGS=10V,ID=30A, RG,ext=1.6Ω 1) Defined by design. Not subject to production test

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 3.9 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 2.5 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 2.9 - nC VDD=15V,ID=30A,VGS=0to4.5V Switching charge Qsw - 4.3 - nC VDD=15V,ID=30A,VGS=0to4.5V Gate charge total2) Qg - 11.4 15 nC VDD=15V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.5 - V VDD=15V,ID=30A,VGS=0to4.5V Gate charge total2) Qg - 24 33 nC VDD=15V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 10.5 - nC VDS=0.1V,VGS=0to4.5V Output charge Qoss - 18 - nC VDD=15V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 50 A TC=25°C Diode pulse current IS,pulse - - 492 A TC=25°C Diode forward voltage VSD - 0.55 0.7 V VGS=0V,IF=7A,Tj=25°C Reverse recovery charge Qrr - 5 - nC VR=15V,IF=7A,diF/dt=400A/µs 1) See ″Gate charge waveforms″ for parameter definition 2) Defined by design. Not subject to production test

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet 4Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 100 120 140 160 100 120 140 ID=f(TC);VGS≥10V Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-3 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 200 300 400 4 V 4.5 V 5 V 10 V 3.5 V 3.2 V 3 V 2.8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 3.2 V 3.5 V 4 V 4.5 V 5 V 7 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 160 240 320 400 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 100 150 200 250 100 200 300 400 gfs=f(ID);Tj=25°C

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 typ RDS(on)=f(Tj);ID=30A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 10 mA VGS(th)=f(Tj);VGS=VDS Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.4 0.8 1.2 10-1 100 101 102 103 -55 °C 25 °C 125 °C 150 °C IF=f(VSD);parameter:Tj

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 6 V 24 V 15 V VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Typ.drain-sourceleakagecurrent VDS[V] IDSS[A] 10-6 10-5 10-4 10-3 10-2 125 °C 100 °C 75 °C 25 °C IDSS=f(VDS);VGS=0V;parameter:Tj Diagram Gate charge waveforms

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet 5PackageOutlines DIMENSIONSMIN.MAX.MILLIMETERSPG-TSDSON-8-U03REVISION: 03DATE: 20.10.2020PACKAGE - GROUPNUMBER: LE1L1aaa cDAb eED2D1 L20.402.010.103.20 0.900.243.20 0.30 1.542.19 0.500.06 (0.20) 1.100.443.40 0.50 1.742.39 0.70 Figure1OutlinePG-TSDSON-8FL,dimensionsinmm

OptiMOSTM5Power-MOSFET,30V BSZ0501NSI Rev.2.2,2020-11-16Final Data Sheet RevisionHistory BSZ0501NSI Revision:2020-11-16,Rev.2.2 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-04-27 Release of final version 2.1 2020-08-13 Update current rating and footnotes 2.2 2020-11-16 Update package drawing Trademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2020InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics (“Beschaffenheitsgarantie”). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer’scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer’sproductsandanyuseofthe productofInfineonTechnologiesincustomer’sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer’s technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.