BSZ031NE2LS5_15 INFINEON | Alldatasheet

Document overview

  • Manufacturer or author: Provided By ALLDATASHEET.COM(FREE DATASHEET DOWNLOAD SITE)
  • PDF pages: 12

Technical content

MetalOxideSemiconductorFieldEffectTransistor OptiMOSTM OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 DataSheet Rev.2.0 Final PowerManagement&Multimarket

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet (enlarged source interconnection) TSDSON-8FL 8 D 7 D 6 D 5 D S 1 S 2 S 3 G 4 1Description

Features

  • Optimizedforhighperformancebuckconverters
  • VeryLowFOMQOSSforHighFrequencySMPS
  • LowFOMSWforHighFrequencySMPS
  • ExcellentgatechargexRDS(on)product(FOM)
  • Verylowon-resistanceRDS(on)@VGS=4.5V
  • 100%avalanchetested
  • N-channel
  • QualifiedaccordingtoJEDEC1)fortargetapplications
  • Pb-freeleadplating;RoHScompliant
  • Halogen-freeaccordingtoIEC61249-2-21 Table1KeyPerformanceParameters Parameter Value Unit VDS 25 V RDS(on),max 3.1 mΩ ID 40 A QOSS 9.1 nC QG(0V..4.5V) 6.3 nC Type/OrderingCode Package Marking RelatedLinks BSZ031NE2LS5 PG-TSDSON-8 FL 31NE2L5 - 1) J-STD20 and JESD22

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet TableofContents

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet 2Maximumratings atTj=25°C,unlessotherwisespecified Table2Maximumratings Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Continuous drain current ID A VGS=10V,TC=25°C VGS=10V,TC=100°C VGS=4.5V,TC=25°C VGS=4.5V,TC=100°C VGS=4.5V,TA=25°C,RthJA=60K/W1) Pulsed drain current2) ID,pulse - - 160 A TC=25°C Avalanche current, single pulse3) IAS - - 20 A TC=25°C Avalanche energy, single pulse EAS - - 20 mJ ID=20A,RGS=25Ω Gate source voltage VGS -16 - 16 V - Power dissipation Ptot 2.1 - W TC=25°C TA=25°C,RthJA=60K/W Operating and storage temperature Tj,Tstg -55 - 150 °C IEC climatic category; DIN IEC 68-1: 55/150/56 3Thermalcharacteristics Table3Thermalcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Thermal resistance, junction - case RthJC - - 4.1 K/W - Device on PCB, 6 cm2 cooling area1) RthJA - - 60 K/W - 1) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. 2) See Diagram 3 for more detailed information 3) See Diagram 13 for more detailed information

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet 4Electricalcharacteristics Table4Staticcharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Drain-source breakdown voltage V(BR)DSS 25 - - V VGS=0V,ID=1mA Gate threshold voltage VGS(th) 1.2 - 2 V VDS=VGS,ID=250µA Zero gate voltage drain current IDSS 0.1 100 µA VDS=20V,VGS=0V,Tj=25°C VDS=20V,VGS=0V,Tj=125°C Gate-source leakage current IGSS - 10 100 nA VGS=20V,VDS=0V Drain-source on-state resistance RDS(on) 3.2 2.6 3.9 3.1 mΩ VGS=4.5V,ID=20A VGS=10V,ID=20A Gate resistance RG - 0.75 1.2 Ω - Transconductance gfs 46 93 - S |VDS|>2|ID|RDS(on)max,ID=20A Table5Dynamiccharacteristics Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Input capacitance1) Ciss - 910 1230 pF VGS=0V,VDS=12V,f=1MHz Output capacitance1) Coss - 390 530 pF VGS=0V,VDS=12V,f=1MHz Reverse transfer capacitance Crss - 38 - pF VGS=0V,VDS=12V,f=1MHz Turn-on delay time td(on) - 3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Rise time tr - 3 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Turn-off delay time td(off) - 15 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω Fall time tf - 2 - ns VDD=12V,VGS=10V,ID=30A, RG,ext=1.6Ω 1) Defined by design. Not subject to producction test

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet Table6Gatechargecharacteristics1) Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Gate to source charge Qgs - 2.3 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge at threshold Qg(th) - 1.5 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate to drain charge Qgd - 1.4 - nC VDD=12V,ID=30A,VGS=0to4.5V Switching charge Qsw - 2.3 - nC VDD=12V,ID=30A,VGS=0to4.5V Gate charge total Qg - 6.3 8.5 nC VDD=12V,ID=30A,VGS=0to4.5V Gate plateau voltage Vplateau - 2.5 - V VDD=12V,ID=30A,VGS=0to4.5V Gate charge total2) Qg - 13.6 18.3 nC VDD=12V,ID=30A,VGS=0to10V Gate charge total, sync. FET Qg(sync) - 5.9 - nC VDS=0.1V,VGS=0to4.5V Output charge2) Qoss - 9.1 12.3 nC VDD=12V,VGS=0V Table7Reversediode Values Min. Typ. Max. Parameter Symbol Unit Note/TestCondition Diode continuous forward current IS - - 30 A TC=25°C Diode pulse current IS,pulse - - 160 A TC=25°C Diode forward voltage VSD - 0.82 1 V VGS=0V,IF=20A,Tj=25°C Reverse recovery charge Qrr - 12 - nC VR=15V,IF=30A,diF/dt=400A/µs 1) See ″Gate charge waveforms″ for parameter definition 2) Defined by design. Not subject to producction test

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet 5Electricalcharacteristicsdiagrams Diagram1:Powerdissipation TC[°C] Ptot[W] 120 160 Ptot=f(TC) Diagram2:Draincurrent TC[°C] ID[A] 120 160 10 V 4.5 V ID=f(TC);parameter:VGS Diagram3:Safeoperatingarea VDS[V] ID[A] 10-1 100 101 102 10-1 100 101 102 103 1 µs 10 µs 100 µs 1 ms 10 ms DC ID=f(VDS);TC=25°C;D=0;parameter:tp Diagram4:Max.transientthermalimpedance tp[s] ZthJC[K/W] 10-6 10-5 10-4 10-3 10-2 10-1 100 10-2 10-1 100 101 0.5 0.2 0.1 0.05 0.02 0.01 single pulse ZthJC=f(tp);parameter:D=tp/T

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet Diagram5:Typ.outputcharacteristics VDS[V] ID[A] 100 150 200 250 300 4.5 V 5 V 10 V 3.5 V 3.2 V 3 V 2.8 V ID=f(VDS);Tj=25°C;parameter:VGS Diagram6:Typ.drain-sourceonresistance ID[A] RDS(on)[mΩ ] 3.5 V 4 V 4.5 V 5 V 6 V 7 V 8 V 10 V RDS(on)=f(ID);Tj=25°C;parameter:VGS Diagram7:Typ.transfercharacteristics VGS[V] ID[A] 120 160 200 150 °C 25 °C ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj Diagram8:Typ.forwardtransconductance ID[A] gfs[S] 120 160 100 150 200 250 gfs=f(ID);Tj=25°C

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet Diagram9:Drain-sourceon-stateresistance Tj[°C] RDS(on)[mΩ ] -60 -20 100 140 180 typ RDS(on)=f(Tj);ID=20A;VGS=10V Diagram10:Typ.gatethresholdvoltage Tj[°C] VGS(th)[V] -60 -20 100 140 180 0.0 0.5 1.0 1.5 2.0 2.5 VGS(th)=f(Tj);VGS=VDS;ID=250µA Diagram11:Typ.capacitances VDS[V] C[pF] 101 102 103 104 Ciss Coss Crss C=f(VDS);VGS=0V;f=1MHz Diagram12:Forwardcharacteristicsofreversediode VSD[V] IF[A] 0.0 0.2 0.4 0.6 0.8 1.0 1.2 100 101 102 103 25 °C 150 °C IF=f(VSD);parameter:Tj

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet Diagram13:Avalanchecharacteristics tAV[µs] IAV[A] 100 101 102 103 100 101 102 25 °C 100 °C 125 °C IAS=f(tAV);RGS=25Ω ;parameter:Tj(start) Diagram14:Typ.gatecharge Qgate[nC] VGS[V] 20 V 12 V 5 V VGS=f(Qgate);ID=30Apulsed;parameter:VDD Diagram15:Drain-sourcebreakdownvoltage Tj[°C] VBR(DSS)[V] -60 -20 100 140 180 VBR(DSS)=f(Tj);ID=1mA Gate charge waveforms

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet 6PackageOutlines Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches

OptiMOSTM5Power-MOSFET,25V BSZ031NE2LS5 Rev.2.0,2015-08-06Final Data Sheet RevisionHistory BSZ031NE2LS5 Revision:2015-08-06,Rev.2.0 Previous Revision Revision Date Subjects (major changes since last revision) 2.0 2015-08-06 Release of final version WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics.With respecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingtheapplication ofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithout limitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered.