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7 SGS-THOMSON BSY55

GENERAL PURPOSE AMPLIFIERS

DESCRIPTION

The BSY55 and BSY56 are silicon planar epitaxial NPN transistors in Jedec TO-39 metal case, in- tended for use in high performance amplifier, oscil- lator and switching circuits. TO-39 INTERNAL SCHEMATIC DIAGRAM c NPN | see E ABSOLUTE MAXIMUM RATINGS [_symbor [Parameter vate unit [Veco | Callectoremiter otage (ip =@) ———SC~d SSS Cid Total Power Dissipation at Tams < 25 °C 0.8 Ww at Toase $25 °C 3 w November 1988 15

Rin j-case | Thermal Resistance Junction-case Max 58 °C/W Rthj-ame | Thermal Resistance Junction-ambient Max 220 “CW ELECTRICAL CHARACTERISTICS (Ta) = 25 C unless otherwise specified) [ symbol | _Parameter__—|__—Test Conditions| Min. | Typ. | Max. | unit | Ica0 Collector Cutoff Vea =90V 10 nA Current (Ie = 0) Vea = 90V Tam = 150 °C 10 pA Emitter Cutoff Current Veg =5V 40 (Io =0) Voc (sat)” | Collector-emitter _ _ Saturation Voltage lo = 150 mA — Ip = 15 mA 0.2 v Vac (sat)* | Base-emitter _ _ Saturation Voltage lo=150mA — Ip = 15 mA 1 138 v hee* DC Current Gain for BSY55 Io =0.1mA Vee =10V 20 50 Io=1mA Voce =10V 60 Ic =10 mA Voce =10V 35 65 Io =150mA —-Vog = 10 V 40 120 Ic = 500 mA Voce =10V 20 for BSY56 Io = 0.1 mA Voce =10V 35 100 Io=1mA Vor =10V 125 Io =10 mA Voe =10V 75 180 Ic = 150 mA Voe =10V 100 300 Ic = 500 mA Voce =10V 35 fr Transition Frequency Io = 50 mA _ f= 50 MHz Voce =10V 100 MHz Ceso Collector-base Capacitance | I¢ =0 _ f<1MHz Vea =10V 10 pF Ceso Emitter-base Capacitance Io =0 _ (ot Mie Ves =0.5V 23 pF NF Noise Figure Io = 0.3 mA Rg=15kQ = Voce =10V f = 30 Hz to 15 kHz hte Small Signal Current Gain Io =1mA Voce =10V f=1 kHz for BSY55 30 150 for BSY56 60 250 Input Impedance Io =1mA Voe =10V f=1 kHz for BSY55 0.8 kQ for BSY56 1.6 kQ hire Reverse Voltage Ratio Io =1mA _ 4 ot ke Voe =10V 3X10 Roe Output Admittance Io =1mA Voz = 10V f=1 kHz for BSY55 2 7 us for BSY56 3 10 us * Pulsed : pulse duration = 300 1s, duty cycle = 1 %. 25 57 86S:THOMSON MSF iaicrasuscreonics SSS

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Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorizedfor use as critical components in life supportdevices or systems without express written approval of SGS-THOMSON Microelectonics. © 1994 SGS-THOMSON Microelectronics - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - ‘Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A CPF Ses-THOmson SY/ inicrosusctraics