BSX59 MOTOROLA | Alldatasheet
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t . wae oo a oo oe MOTOROLA SC XSTRS/R F 1cE D 6367254 OO8b50b 7 | BSX59 - CASE 79-04, STYLE 1 TO-39 (TO-205AD) MAXIMUM RATINGS a 59 60 3 Collector Collector-Emitter Voltage | Vceo [48 [/30 | vac | Collector-Emitter Voltoge [~vces [60 | 60 | vue | 2 : Emitter-Base Voltage |" Veso [5.0 | vec | 3th, , [‘Cotlector Current -Continuovs | tc | 1 | Ade _| SEminer Total Device Dissipation @TA = 25°C Lm [| 28 | tet | Derete above 25°C 467 | wie SWITCHING TRANSISTORS Total Device Dissipation @Tc = 25°C 3.5 ‘Watt Derate above 25°C 20 mw/°C NPN SILICON Operating and Storage Junction Ty, Tstg [-65 to +200 Temperature Range: Refer to 2N3725 for graphs. ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.) [Characteristic OT Symbot [Min [Max T unit] OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage \\VieR)CEO| Vv {Ic = 10 mAde, Ip = 0) [8Sx59) (BSX60] Collector-Base Breakdown Voltage \\ViaR)cBO v (ic = 10 pA, Ie = 0) 70 Collector Cutoff Current (Vcp = 40 V, Ie = 0) 500 nA (Vcp = 40 V, le = 0, Ty = 150°C) 300, pA Emitter Cutoff Current (Veg = 4.0 V, Ic = 0) 300 nA (eB = 4.0 V, Ie = 0, Ty = 150°C) 50 uA Collector Cutoff Current Icex (Vce = 40 V, ~Vee = 4.0 V) 500 1A (VCE = 40 V, - Vee = 4.0 V, Ty = 150°C) 300 pA Emitter Cutoff Current (VcE = 40 V, ~ Vee = 4.0 V) 500 nA (VceE = 40 V, -VBeE = 4.0 V, Ty = 150°C) 300 pA ON CHARACTERISTICS Collector-Emitter Saturation Voltage VCE{sat) Vv (Ic = 150 mA, Ip = 15 mA) 03 (ic = 500 mA, Ip = 50 mA) 06 (ic = 1.0 A, Ig = 100 mA) 1.0 Baso-Emitter Saturation Voltage VBE(sat) Vv (Ic = 150 mA, Ip = 15 mA) {lc = 500 mA, Ig = 50 mA) {8SX69) (BSX60) tig = 1.0 A, Ig = 100 mA) DC Current Gain {ic = 150 mA, VcE = 1.0 V) 30 {ic = 500 mA, VcE = 1.0 V) {BSXx59) 25 {BSX60) 30 lic = 1.0 A, VcE = 5.0 V) {BSX59) 20 {8SX60] 26 SMALL SIGNAL CHARACTERISTICS Small Signal Current Gain tic = 50 mA, Vce = 10 V, f = 100 MHz) Tnput Capacitance (-Vse = 0.5 V, Ic = 0, f = 1.0 MHz) MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 9-295 s
MOTOROLA SC XSTRS/R F 42e 0 Bf eaezasy ovseso? 5 fj BSX59, BSX60 T- 35 -| q ELECTRICAL CHARACTERISTICS (continued) (TA = 25°C unless otherwise noted.) [—Charscteristig SS —‘[ syrnbot | Min | mex | Ua] Output Ce sitar oes orem Te | | Turn On Time (See Figure 1) (lc = 500 mA, Ig = 50 mA, -VgeE = 2.0 V) (Voc = 60 V) (8SX59) (Woec = 30. V) {8Sx60) (Ic = 500 mA, Bi = Ip2 = 50 mA) (Voc = 50 V) (BSX69) 60 (Vec = 30 V) [8SX60} 70 FIGURE 1 — SWITCHING TIME TEST CIRCUIT Vec ° Re Nour Vin 3750 | | | | on <Sns! 860 400n¥ 2500% Pulse Generator “Ve -3V Output Impedance = 500 a Vin 1 BSX59 a |g FS 0% | Vec | 50 v | fe ela Le net Vin 24.75 Vv Vout | | | -VB 16.7 v ah | \\ smal tod el to MOTOROLA SMALL-SIGNAL TRANSISTORS, FETs AND DIODES 3-296 | .