BSX20 STMICROELECTRONICS | Alldatasheet

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HIGH SPEED SATURATED SWITCHES

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The BSX20 is a silicon planar epitaxial NPN transistors in Jedec TO-18 metal case. They are primarily intended for veery high speed saturated switching applications. INTERNAL SCHEMATIC DIAGRAM November 1997 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V CBO Collector-Base Voltage (IE =0 ) 4 0 V V CES Collector-Emitter Voltage (VBE =0 ) 4 0 V V CEO Collector-Emitter Voltage (IB =0 ) 1 5 V V EBO Emitter-Base Voltage (IC =0 ) 4 . 5 V IC Collector Current (t = 10µ s) 0.5 A P tot Total Dissipation at Tamb ≤ 25 oC at Tcase ≤ 25 oC 0.36 1.2 W W Tstg Storage Temperature -65 to 200 oC Tj Max. Operating Junction Temperature 200 oC TO-18

Thermal Resistance Junction-Case Max Thermal Resistance Junction-Ambient Max 146 486 oC/W oC/W ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) V CB =2 0V V CB =2 0V T amb =1 5 0oC 0.4 µ A µ A ICES Collector Cut-off Current (VBE =0 ) V CE =1 5V T amb =5 5 oC V CE =4 0V 0.4 µ A µ A ICEX Collector Cut-off Current (VBE =- 3 V ) V CE =1 5V T amb =5 5 oC0 . 6 µ A IBEX Base Cut-off Current (VBE =- 3 V ) V CE =1 5V T amb =5 5 oC0 . 6 µ A IEBO Emitter Cut-off Current (IC =0 ) V EB = 4.5 V 10 µ A V CER(sus) ∗ Collector-Emitter Sustaining Voltage (RBE =1 0Ω ) IC =1 0m A 2 0 V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage B =0 ) IC =1 0m A 1 5 V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =1 0m A I B =1m A IC =1 0 0m A I B =1 0m A IC =1 0m A I B =0 . 3m A 0.25 0.6 0.3 V V V V BE(sat)∗ Base-Emitter Saturation Voltage IC =1 0m A I B =1m A IC =1 0 0m A I B =1 0m A 0.7 0.85 1.5 V V V BE(on) ∗ Base-Emitter On Voltage IC =3 0 µ AV CE =2 0V Tamb = 100 oC 350 mV hFE ∗ DC Current Gain I C =1 0m A V CE =1V IC =1 0 0m A V CE =2V IC =1 0m A V CE =1V Tamb =- 5 5oC fT Transition Frequency I C =1 0m A V CE = 10 V 500 600 MHz C CBO Collector Base Capacitance IE =0 V CB =5V 4 p F C EBO Emitter Base Capacitance IC =0 V EB =1V 4 . 5 p F ts∗∗ Storage Time V CC =1 0V I C =1 0m A IB1 =- IB2 =1 0m A 61 3 n s ton∗∗ Turn-on Time V CC =3V I C =1 0m A IB1 =3m A V CC =6V I C =1 0 0m A IB1 =4 0m A ns ns toff∗∗ Turn-off Time V CC =3V I C =1 0m A IB1 =3 m A I B2 =- 1 . 5m A V CC =6V I C =1 0 0m A IB1 =4 0 m A I B2 =- 2 0m A ns ns ∗ Pulsed: Pulse duration = 300µs, duty cycle≤ 1% ∗∗ See test circuit BSX20

Base-emitter Saturation Voltage.Collector-emitter SaturationVoltage DC Current Gain Transition Frequency. BSX20

Test circuit for tS. BSX20

DIM. mm inch A 12.7 0.500 B 0.49 0.019 D 5.3 0.208 E 4.9 0.193 F 5.8 0.228 G 2.54 0.100 H 1.2 0.047 I 1.16 0.045 L4 5 o 45o L G I DA F E B H C TO-18 MECHANICAL DATA 0016043 BSX20

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ... BSX20