BSV57B TFUNK | Alldatasheet
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Silizium-Unijunction-Transistor Silicon Unijunction Transistor Anwendungen: Ansteuerung von Thyristoren Applications: Thyristor control Abmessungen in mm Dimensions in mm | be 8 ' e 25s 92 ds 8 ; mores Soe or Normgehause Case
10 B 3 DIN 41868
max. 0,49 Absolute Grenzdaten Absolute maximum ratings Interbasisspannung Upip2') 35 v Interbase voltage Emitter-Basis-1-Sperrspannung -Uep} 35 v Emitter-base-one voltage EmitterstoBstrom TesM 18 A Emitter-surge current Gesamtverlustleistung Total power dissipation tamb = 25°C Prot 300 mw Sperrschichttemperatur 4 125 °C Junction temperature Lagerungstemperaturbereich ‘stg 55... +125 °C Storage temperature range ') Upops = VreB° tot B 21V.2.531/0875A1 397
Kenngréfen Min. Typ. Max. Characteristics tamb = 25°C Emittersperrstrom Emitter cut-off current = Uppy = 30V -Tep10") 20. nA Emitter-Sdttigungsspannung Emitter saturation voltage Upopt = 10V, Ie = 50 mA Uspisat 2 3 v Héckerstrom Peak point current Ugogi = 25 Ip 6 WA Talstrom Valley point current Upopi = 20V, Rpg = 1009 ly 4 mA Interbasiswiderstand Interbase resistance Ugopy = 3V. ig =0 rep”) 47 91 ka Inneres Spannungsverhiltnis Intrinsic stand-off ratio Uppy = 10 a) 0,68 0,82
75494 TH 9+10v
Eichen: S-gedruckt J Calibration with 8 [| S-pressed D 75k 1N 4149 2 — Ca L) Be, a Yoo xa tur our rors MeBschaltung fir: Test circuit for: hi ——— , 398