BSV52

BSV52 STMICROELECTRONICS | Alldatasheet

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SMALL SIGNAL NPN TRANSISTORS n SILICON EPITAXIAL PLANAR NPN TRANSISTORS n MINIATURE PLASTIC PACKAGE FOR APPLICATION IN SURFACE MOUNTING CIRCUITS n LOW CURRENT, FAST SWITCHING APPLICATIONS. INTERNAL SCHEMATIC DIAGRAM March 1996 SOT-23 Type Marking BSV52 B2 SO2369 N11 SO2369A N81 ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit SO2369/A BSV52 V CES Collector-Emitter Voltage (VBE =0 ) 4 0 2 0 V V CBO Collector-Base Voltage (IE =0 ) 4 0 2 0 V V CEO Collector-Emitter Voltage (IB =0 ) 1 5 1 2 V V EBO Emitter-Base Voltage (IC =0 ) 4 . 5 5 V ICM Collector Peak Current 0.2 A P tot Total Dissipation at Tc =2 5 oC 200 mW Tstg Storage Temperature -65 to 150 oC Tj Max. Operating Junction Temperature 150 oC

R thj-amb • R thj-SR • Thermal Resistance Junction-Ambient Max Thermal Resistance Junction-Substrate Max 620 400 oC/W oC/W

• Mounted on a ceramic substrate area = 7 x 5 x 0.5 mm ELECTRICAL CHARACTERISTICS (Tcase =2 5oC unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Unit ICBO Collector Cut-off Current (IE =0 ) V CB =2 0V forSO2369/SO2369A V CB =1 0V forBSV52 V CB =1 0V T j = 150 oC forBSV52 400 100 nA nA µ A ICES Collector Cut-off Current (VBE =0 ) V CB =2 0V forSO2369A 400 nA V (BR)CES ∗ Collector-Emitter Breakdown Voltage (IB =0 ) IC =1 0 µ A forSO2369/SO2369A forBSV52 V V V (BR)CEO ∗ Collector-Emitter Breakdown Voltage B =0 ) IC =1 0m A forSO2369/SO2369A forBSV52 V V V (BR)CBO ∗ Collector-Base Breakdown Voltage B =0 ) IC =1 0 µ A forSO2369/SO2369A forBSV52 V V V (BR)EBO Emitter-Base Breakdown Voltage (IC =0 ) IE =1 0 µ A forSO2369/SO2369A forBSV52 4.5 V V V CE(sat)∗ Collector-Emitter Saturation Voltage IC =1 0m A I B =0 . 3m A forBSV52 IC =1 0m A I B =1m A forSO2369A forBSV52 IC =3 0m A I B =3m A forSO2369 BSV52 IC =5 0m A I B =5m A forBSV52 IC =1 0 0m A I B =1 0m A forSO2369A 0.3 0.2 0.25 0.25 0.4 0.5 V V V V V V V BE(sat)∗ Collector-Base Saturation Voltage IC =1 0m A I B =1m A IC =3 0m A I B =3m A forSO2369A IC =5 0m A I B =5m A forBSV52 IC =1 0 0m A I B =1 0m A forSO2369A 0.7 0.85 1.15 1.2 1.6 V V V V h FE ∗ DC Current Gain I C =1mA V CE =1V for BSV52 IC =10mA V CE =0.35V for SO2369A IC =10mA V CE =1V for All types IC =30mA V CE =0.4V for SO2369A IC =50mA V CE =1V for BSV52 IC =100mA V CE =1V for SO2369A IC =100mA V CE =2V for SO2369 120 120 ∗ Pulsed: Pulse duration = 300µs, duty cycle≤ 2% BSV52/SO2369/SO2369A

ELECTRICAL CHARACTERISTICS (Continued) Symbol Parameter Test Conditions Min. Typ. Max. Unit fT Transition Frequency I C =1 0m A V CE = 10V f = 100MHz forSO2369A forBSV52/SO2369 500 400 MHz MHz C CB Collector Base Capacitance IE =0 V CE =5V f=1M H z 4 p F C EB Emitter Base Capacitance IC =0 V EB =1V f=1M H z forBSV52 4.5 pF ton Turn On Time I C =1 0m A V BE =- 0 . 5V IB =3m A 12 ns ts Storage Time I C =1 0m A I B1 =- IB2 =1 0 m A 1 3 n s toff Turn Off Time I C =1 0m A I B1 =3m A IB2 = -1.5 mA 18 ns ∗ Pulsed: Pulse duration = 300µs, duty cycle≤ 2% BSV52/SO2369/SO2369A

DIM. mm mils A 0.85 1.1 33.4 43.3 B 0.65 0.95 25.6 37.4 C 1.20 1.4 47.2 55.1 D 2.80 3 110.2 118 E 0.95 1.05 37.4 41.3 F 1.9 2.05 74.8 80.7 G 2.1 2.5 82.6 98.4 H 0.38 0.48 14.9 18.8 L 0.3 0.6 11.8 23.6 M 0 0.1 0 3.9 N 0.3 0.65 11.8 25.6 O 0.09 0.17 3.5 6.7 0044616/B SOT-23 MECHANICAL DATA BSV52/SO2369/SO2369A

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsabilit y for the consequences of use of such information nor for any infringemen t of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise underany patent or patent rights of SGS-THOMSON Microelectr onics. Specifications mention ed in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectr onics products are not authorized for use as critical compon ents in life supportdevices or systems withoutexpre ss written approval of SGS-THOMSON Microelectonics.  1995 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserve d SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan- Korea - Malaysia - Malta - Morocco - The Netherlands - Singapore - Spain- Sweden- Switzerland - Taiwan - Thailand - United Kingdom - U.S.A BSV52/SO2369/SO2369A