BSV52 KEXIN | Alldatasheet
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Features
High current (max. 100 mA). Low voltage (max. 12 V). Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage V CBO 20 V Collector-emitter voltage V CEO 12 V Emitter-base voltage V EBO 5V Collector current I C 100 mA Peak collector current I CM 200 mA Peak base current I BM 100 mA Total power dissipation P tot 250 mW Storage temperature T stg - 6 5t o+ 1 5 0 Junction temperature T j 150 Operating ambient temperature R amb - 6 5t o+ 1 5 0 Thermal resistance from junction to ambient * R th j-a 500 K/W * Transistor mounted on an FR4 printed-circuit board.
www.kexin.com.cn2 SMD Type ICSMD Type Transistors Electrical Characteristics Ta = 25 Parameter Symbol Testconditons Min Typ Max Unit IE =0 ;VCB = 20 V 400 nA IE =0 ;VCB =2 0V ;Tj = 125 30 ìA Emitter cutoff current I EBO IC =0 ;VEB = 4 V 100 nA DC current gain h FE VCE =1V ,I C = 10 mA 40 120 IC =1 0m A ;IB =3 0 0ì A 300 mV IC =1 0m A ;IB =1m A 250 mV IC =5 0m A ;IB =5m A 400 mV IC =1 0m A ;IB =1m A 700 850 mV IC =5 0m A ;IB =5m A 1.4 V Collector capacitance C c IE =i E =0 ;VCB =5V ;f=1M H z 4p F Emitter capacitance C e IC =i C =0 ;VEB =1V ;f=1M H z 4.5 pF Transition frequency f T IC =1 0m A ;VCE =1 0V ;f=1 0 0M H z 400 500 MHz Turn-on time t on 10 ns Delay time t d 4n s Rise time t r 6n s Turn-off time t off 20 ns Storage time t s 10 ns Fall time t f 10 ns ICBOCollector cutoff current VCEsat ICon =1 0m A ;IBon =3m A ; IBoff =- 1 . 5m A VBEsat collector-emitter saturation voltage base-emitter saturation voltage BSV52 Marking Marking B2