BSV52

BSV52 FAIRCHILD | Alldatasheet

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Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES : 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted BSV52 This device is designed for high speed saturated switching at collector currents of 10 mA to 100 mA. Sourced from Process 21. Symbol Parameter Value Units VCEO Collector-Emitter Voltage 12 V VCES Collector-Base Voltage 20 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current - Continuous 200 mA TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 °C Symbol Characteristic Max Units *BSV52 PD Total Device Dissipation Derate above 25°C 225 1.8 mW mW/ °C R θJA Thermal Resistance, Junction to Ambient 556 °C/W C E BSOT-23 Mark: B2 *Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.  1997 Fairchild Semiconductor Corporation BSV52

Electrical Characteristics TA = 25°C unless otherwise noted OFF CHARACTERISTICS V(BR)CEO Collector-Emitter Breakdown Voltage IC = 10 mA, IB = 01 2V V(BR)CES Collector-Base Breakdown VoltageIC = 10 µA, IE = 0 20 V V(BR)EBO Emitter-Base Breakdown Voltage IE = 100 µA, IC = 0 5.0 V ICBO Collector-Cutoff Current V CB = 10 V, IE = 0 VCB = 10 V, IE = 0, TA = 125°C 100 5.0 nA µA ON CHARACTERISTICS hFE DC Current Gain I C = 1.0 mA, VCE = 1.0 V IC = 10 mA, VCE = 1.0 V IC = 50 mA, VCE = 1.0 V 120 VCE(sat) Collector-Emitter Saturation Voltage IC = 10 mA, IB = 0.3 mA IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.3 0.25 0.4 V V V VBE(sat) Base-Emitter Saturation Voltage IC = 10 mA, IB = 1.0 mA IC = 50 mA, IB = 5.0 mA 0.7 0.85 1.2 V V Symbol Parameter Test Conditions Min Max Units SMALL SIGNAL CHARACTERISTICS fT Transition Frequency I C = 10 mA, VCE = 10 V, f = 100 MHz

400 MHz

C cb Collector-Base Capacitance I E = 0, VCB = 5.0 V, f = 1.0 MHz 4.0 pF C eb Emitter-Base Capacitance I C = 0, VEB = 1.0 V, f = 1.0 MHz 4.5 pF SWITCHING CHARACTERISTICS ts Storage Time I B1 = IB2 = IC = 10 mA 13 ns ton Turn-On Time V CC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA 12 ns toff Turn-Off Time V CC = 3.0 V, IC = 10 mA, IB1 = 3.0 mA, IB2 = 1.5 mA 18 ns Spice Model Itf=.3 Vtf=4 Xtf=4 Rb=10) NPN Switching Transistor (continued) BSV52

1. 01 0 .1 1 10 1 00 10 0 15 0 20 0 I - COLLEC TOR CU RR EN T (m A) h - DC CURRENT GAIN FE C V = 1.0 VCE - 40 °C 25 ° C 125 ° C Collector-Emitter Saturation Vol tag e vs Col lecto r C urr en t 0.1 1 10 1 00 500 0.1 0.2 0.3 0.4 0.5 I - COLLEC TOR C URR ENT (m A) V - C OLLEC TOR-EMITTER VOL TAGE (V) CESAT - 40 °C 25 °C C β = 1 0 125 °C Base-Emitter ON Voltage vs Collector Current 0.1 1 10 100 0.2 0.4 0.6 0.8 I - COLLEC TOR C URR ENT (m A) V - BASE-E MITTER ON VOLTAGE (V) BE(O N) C V = 1. 0VCE - 40°C 25 °C 125 °C Base-Emitter Saturation Voltage vs Coll ector Curr ent 0.1 1 10 1 00 3 00 0.4 0.6 0.8 1.2 1.4 I - COLLECTOR CURRENT (mA ) V - BASE -EM ITTER VOLTAG E (V) BE SAT C β = 10 - 40 °C 25 °C 125 °C Collector-Cutoff Current vs Ambient Temperature 25 50 75 1 00 125 150 10 0 60 0 T - AMBIENT TEMPERA TUR E ( C) I - COLLECTOR CURRENT (nA) A V = 20VCB CBO BSV52 NPN Switching Transistor (continued)

(continued) Typical Characteristics (continued) Output Capacitance vs Reverse Bias Voltage 0.1 0.5 1 5 10 50 REVERSE BIAS VOLTAGE (V) CAPACITANCE (pF) C ibo C obo F = 1.0MHz Switching Times vs Collector Current 2 5 10 20 50 100 300 100 I - COLLECTOR CURRENT (mA) SWITCHING TIMES (ns) I = 10 I = I = 10 V = 3.0 VCC C t s t s t f t s t s t s t s t s t d t s t s t r C B1 B2 Storage Time vs Turn On and Turn Off Base Currents 02468 1 0 -12 -10 I - TURN ON BASE CURRENT (mA) I - TURN OFF BASE CURRENT (mA) 6.0 ns 4.0 ns I = 10 mA C V = 3.0 VCC t = 3.0 nss Storage Time vs Turn On and Turn Off Base Currents 02468 1 0 -12 -10 I - TURN ON BASE CURRENT (mA) I - TURN OFF BASE CURRENT (mA) 6.0 ns 4.0 ns I = 10 mA C V = 3.0 VCC t = 3.0 nss Storage Time vs Turn On and Turn Off Base Currents 0 5 10 15 20 25 30 -30 -25 -20 -15 -10 I - TURN ON BASE CURRENT (mA) I - TURN OFF BASE CURRENT (mA) I = 100 mA C V = 3.0 VCC t = 3.0 ns 4.0 ns 6.0 ns 8.0 ns 16.0 ns S Switching Times vs Ambient Temperature 25 50 75 1 00 T - A MB IENT T EMPER A TURE ( C) SWIT CHIN G TIM E S (n s) I = 10 mA, I = 3. 0 mA, I = 1.5 mA, V = 3.0 V CC A ° t s t s t f t s t s t s t s t s t d t s t s t r C B1 B2

Typical Characteristics (continued) Rise Time vs. Turn On Base Current and Collector Current 1 10 100 500 I - C OLLEC TOR CUR RENT (m A) I - TU RN ON B ASE CUR RENT (m A) C V = 3.0 VCC t = 2. 0 nsr 5.0 ns 10 ns 20 ns Fall Time vs Turn On and Turn Off Base Currents 02468 1 0 I - TURN ON BASE CURRENT (mA) I - TURN OFF BASE CURRENT (mA) I = 10 mA C V = 3.0 VCC t = 7.0 nsf 8.0 ns 10 ns Fall Time vs Turn On and Turn Off Base Currents 02468 1 0 1 2 -12 -10 I - TURN ON BASE CURRENT (mA) I - TURN OFF BASE CURRENT (mA) I = 30 mA C V = 3.0 VCC t = 2.0 nsf 5.0 ns 4.0 ns 3.0 ns Fall Time vs Turn On and Turn Off Base Currents 0 5 10 15 20 25 30 -30 -25 -20 -15 -10 I - TURN ON BASE CURRENT (mA) I - TURN OFF BASE CURRENT (mA) I = 100 mA C V = 3.0 VCC t = 2.0 nsf 8.0 ns 4.0 ns3.0 ns 12.0 ns Delay Time vs Base-Emitter OFF Voltage and Turn On Base Current 12 5 1 0 2 0 5 0 I - TURN ON BASE CURRENT (mA) V - BASE-EMITTER OFF VOLTAGE (V) BE(O) I = 10 mA C V = 3.0 VCC t = 8.0 nsd 4.0 ns5.0 ns 3.0 ns Power Dissipation vs Ambient Temperature 0 2 55 07 5 1 0 0 1 2 5 1 5 0 100 150 200 250 300 350 TEMPERA TURE ( C) P - POWER DISSIPA TION (mW) D o SOT-23 BSV52 NPN Switching Transistor (continued)

• 10 VIN VIN 0.1 µµµµµF 'A' 500 ΩΩΩΩΩ 890 ΩΩΩΩΩ 0.1 µµµµµF 1 KΩΩΩΩΩ +6V VOUT - 4V 10% VOUT ts 10% Pulse waveform at point ' A' 0.0023µµµµµ F 0.0023µµµµµF 10 µµµµµF 10 µµµµµF

11 V 10 V

500 ΩΩΩΩΩ 91 ΩΩΩΩΩ Pulse generator VIN Rise Time < 1 ns Source Impedance = 50Ω PW ≥ 300 ns Duty Cycle < 2% 56 ΩΩΩΩΩ FIGURE 1: Charge Storage Time Measurement Circuit toff 10% 90%VOUT VIN 0VOUT toff VBB = 12 V VIN = - 20.9 V VIN VOUT 10% 90% VIN ton ton VBB = - 3.0 V VIN = + 15.25 V To sampling oscilloscope input impedance = 50Ω Rise Time ≤ 1 nsPulse generator VIN Rise Time < 1 ns Source Impedance = 50Ω PW ≥ 300 ns Duty Cycle < 2% 0.0023µµµµµF 0.0023µµµµµF 0.05 µµµµµF 0.05 µµµµµF 0.1 µµµµµF 0.1 µµµµµF

3.3 KΩΩΩΩΩ

50 ΩΩΩΩΩ 3.3 KΩΩΩΩΩ 220 ΩΩΩΩΩ 50 ΩΩΩΩΩ VCC = 3.0 V VBB FIGURE 2: tON , tOFF Measurement Circuit BSV52 NPN Switching Transistor (continued)

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