BSV52

BSV52 DIOTEC | Alldatasheet

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1) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 18 01.11.2003 2.5 max 1.3 ±0.1 1.1 2.9 ±0.1 0.4 1 2 Type Code 1.9 BSV 52 Switching Transistors NPN Surface mount Si-Epitaxial PlanarTransistors Si-Epitaxial PlanarTransistoren für die Oberflächenmontage NPN Power dissipation – Verlustleistung 250 mW Plastic case SOT-23 Kunststoffgehäuse (TO-236) Weight approx. – Gewicht ca. 0.01 g Plastic material has UL classification 94V-0 Gehäusematerial UL94V-0 klassifiziert Dimensions / Maße in mm 1 = B 2 = E 3 = C Standard packaging taped and reeled Standard Lieferform gegurtet auf Rolle Maximum ratings (TA = 25/g47C) Grenzwerte (TA = 25/g47C) BSV 52 Collector-Emitter-voltage B open V CE0 12 V Collector-Base-voltage E open V CB0 20 V Emitter-Base-voltage C open V EB0 5 V Power dissipation – Verlustleistung P tot 250 mW 1) Collector current – Kollektorstrom (dc) I C 100 mA Peak Collector current – Kollektor-Spitzenstrom I CM 200 mA Peak Base current – Basis-Spitzenstrom I BM 100 mA Junction temp. – Sperrschichttemperatur T j 150/g47C Storage temperature – Lagerungstemperatur T S - 65…+ 150 /g47C Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Collector-Base cutoff current – Kollektorreststrom IE = 0, VCB = 20 V I CB0 – – 400 nA IE = 0, VCB = 20 V, Tj = 125/g47CI CB0 – – 30 /g58A Emitter-Base cutoff current – Emitterreststrom IC = 0, VEB = 4 V I EB0 – – 100 nA Collector saturation volt. – Kollektor-Sättigungsspg. 1) IC = 10 mA, IB = 0.3 mA V CEsat – – 300 mV IC = 10 mA, IB = 1 mA V CEsat – – 250 mV IC = 50 mA, IB = 5 mA V CEsat – – 400 mV

1) Tested with pulses t p = 300 /g58s, duty cycle /g35 2% – Gemessen mit Impulsen tp = 300 /g58s, Schaltverhältnis /g35 2% 2) Mounted on P.C. board with 3 mm 2 copper pad at each terminal Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluß 1901.11.2003 Switching Transistors BSV 52 Characteristics (Tj = 25/g47C) Kennwerte (T j = 25/g47C) Min. Typ. Max. Base saturation voltage – Basis-Sättigungsspannung 1) IC = 10 mA, IB = 1 mA V BEsat 700 mV – 850 mV IC = 50 mA, IB = 5 mA V BEsat – – 1.2 V DC current gain – Kollektor-Basis-Stromverhältnis 1) VCE = 1 V, IC = 1 mA h FE 25 – – VCE = 1 V, IC = 10 mA h FE 40 – 120 VCE = 1 V, IC = 50 mA h FE 25 – – Gain-Bandwidth Product – Transitfrequenz VCE = 10 V, IC = 10 mA, f = 100 MHz f T 400 MHz 500 MHz – Collector-Base Capacitance – Kollektor-Basis-Kapazität VCB = 5 V, IE = ie = 0, f = 1 MHz C CB0 – – 4 pF Emitter-Base Capacitance – Emitter-Basis-Kapazität VEB = 1 V, IC = ic = 0, f = 1 MHz C EB0 – – 4.5 pF Switching times – Schaltzeiten turn-on time ICon = 10 mA IBon = 3 mA - IBoff = 1.5 mA ton – – 10 ns delay time t d – – 4 ns rise time t r – – 6 ns turn-off time t off – – 20 ns storage time t s – – 10 ns fall time t f – – 10 ns Thermal resistance junction to ambient air Wärmewiderstand Sperrschicht – umgebende Luft RthA 420 K/W 2) Marking - Stempelung BSV 52 = B2