BSV52 ZETEX | Alldatasheet

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SOT23 NPN SILICON PLANAR BSV52 HIGH SPEED SWITCHING TRANSISTOR PARTMARKING DETAILS. BSV52 - B2 BSV52R - Ba c e ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage [Vea [20 | Collector-Emitter Voltage | Vces | OV [ Emitter-Base Voltage | ep | ST | Peak Pulse Current Tew | 200m | Continuous Collector Current | ie | 100 mA Power Dissipation at Tamp = 25°C [Prop 80 mw Operating and Storage Temperature Range 55 to +150 ELECTRICAL CHARACTERISTICS (at T,,,)=25°C unless otherwise stated) PARAMETER SYMBOL [ mv. [rv | ax. UNIT | CONDITIONS Collector-Base Cut-Off Teo nA | 1¢=0, Vog= 10V Current HA | Ip=0, Veg=10V, F-12558 Collector-Emitter Vesa 300° | mV | ic=10mA, Ig=0.3mA Saturation Voltage 250 | mv | Ic¢=10mA\\ Ip=1.0mA 400 | mV | Ic=50mA, Ig=5.0mA Base-Emitter Vetiean 700 B50 | mV | c= 10mA, Ig=1.0mA Saturation Voltage 1.2 | V_| I¢=50mA\\ Ip=5.0ma Static Forward Current hee 25 I= 1.0mA, Veg=1.0V Transfer Ratio 40 IG=10mA, Voe= 1.0V 25 IG=50mA, Veg = 1.0V Transition Frequency i Ic=10mA, Veg = 10V f= 100MHz Collector Capacitance Cre Ig=1,=0, Veg=5.0V f= 1/OMHz Emitter Capacitance Cre 45 | pF | ic=I=0, Veg=1.0V f= 1J0MHz Turn-On Time T, 12 Voc =3V, Veco = 1-5V ° 1S 10mA, Ie 2 ma {see Fig. 1) Turn-Off Time Tow 18 Vee =3V, Ic=10mA, Igy = 3mA lgz=1-5mA (see Fig. 2) Storage Time ts 13 Ip =Ig2=Ic= 10mA, (see Fig. 3) For Switching Time Circuit see page 0S201