BSV236SP

BSV236SP_06 INFINEON | Alldatasheet

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Technical content

2006-12-04Rev 1.3 Page 1 BSV 236SP OptiMOS -P Small-Signal-Transistor Product Summary VDS -20 V RDS(on) 175 mΩ ID -1.5 A Feature

• P-Channel
• Enhancement mode
• Super Logic Level (2.5 V rated)
• 150°C operating temperature
• Avalanche rated
• dv/dt rated PG-SOT-363 VPS05604 Gate pin 3 Drain pin 1,2, Source pin 4 5,6 Marking X2s Type Package Tape and Reel inf BSV 236SP PG-SOT-363 L6327:3000pcs/r. Maximum Ratings,at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous drain current TA=25°C TA=70°C ID -1.5 -1.2 A Pulsed drain current TA=25°C ID puls -6 Avalanche energy, single pulse ID=-1.5 A , VDD=-10V, RGS=25Ω EAS 9.5 mJ Reverse diode dv/dt IS=-1.5A, VDS=-16V, di/dt=200A/µs, Tjmax=150°C dv/dt -6 kV/µs Gate source voltage VGS ±12 V Power dissipation TA=25°C Ptot 0.56 W Operating and storage temperature Tj , Tstg -55... +150 °C IEC climatic category; DIN IEC 68-1 55/150/56

2006-12-04Rev 1.3 Page 2 BSV 236SP Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - soldering point RthJS - - 90 K/W SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 1) RthJA 220 110 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage VGS=0, ID=-250µA V(BR)DSS -20 - - V Gate threshold voltage, VGS = VDS ID=-8µA Zero gate voltage drain current VDS=-20V, VGS=0, Tj=25°C VDS=-20V, VGS=0, Tj=150°C IDSS -0.1 -10 -100 µA Gate-source leakage current VGS=-12V, VDS=0 IGSS - -10 -100 nA Drain-source on-state resistance VGS=-2.5V, ID=-0.8A RDS(on) - 193 285 mΩ Drain-source on-state resistance VGS=-4.5, ID=-1.5A RDS(on) - 131 175 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air; t ≤10 sec.

2006-1 2-04Rev 1.3 Page 3 BSV 236SP Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. Dynamic Characteristics Transconductance gfs /Ge7VDS/Ge7≥2*/Ge7ID/Ge7*RDS(on)max ID=-1.2A 2.2 4.4 - S Input capacitance Ciss VGS=0, VDS=-15V, f=1MHz - 228 - pF Output capacitance Coss - 92 - Reverse transfer capacitance Crss - 75 - Turn-on delay time td(on) VDD=-10V, VGS=-4.5V, ID=-1A, RG=6Ω - 5.7 8.5 ns Rise time tr - 8.5 12.7 Turn-off delay time td(off) - 14.1 21.1 Fall time tf - 12.2 18.3 Gate Charge Characteristics Gate to source charge Qgs VDD=-10V, ID=-1.5A - -0.4 -0.6 nC Gate to drain charge Qgd - -1.8 -2.7 Gate charge total Qg VDD=-10V, ID=-1.5A, VGS=0 to -4.5V - -3.8 -5.7 Gate plateau voltage V(plateau) VDD=-10V, ID=-1.5A - -1.6 - V Reverse Diode Inverse diode continuous forward current IS TA=25°C - - -0.11 A Inverse diode direct current, pulsed ISM - - -6 Inverse diode forward voltage VSD VGS=0, |IF| = |ID| - 0.88 1.3 V Reverse recovery time trr VR=-10V, |IF| = |lD|, diF/dt=100A/µs - 16.4 20.5 ns Reverse recovery charge Qrr - 3.4 4.3 nC

2006-1 2-04Rev 1.3 Page 4 BSV 236SP

1 Power dissipation

Ptot = f (TA) 0 20 40 60 80 100 120 °C 160 TA 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.1 W 1.3 BSV 236SP Ptot

2 Drain current

I D = f (TA) parameter: |VGS|≥ 4.5 V 0 20 40 60 80 100 120 °C 160 TA -0.2 -0.4 -0.6 -0.8 -1.2 A -1.6 BSV 236SP ID

3 Safe operating area

I D = f ( VDS ) parameter : D = 0 , TA = 25 °C -10 -1 -10 0 -10 1 -10 2 V VDS -2 -10 -1 -10 0 -10 1 -10 A BSV 236SP ID R DS(on) = V DS / I D DC 10 ms 1 ms 100 µs tp = 45.0µs

4 Transient thermal impedance

Z thJS = f (tp) parameter : D = tp/T 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s tp -3 10 -2 10 -1 10 0 10 1 10 2 10 K/W BSV 236SP ZthJS single pulse 0.01 0.02 0.05 0.10 0.20 D = 0.50

2006-12-04Rev 1.3 Page 5 BSV 236SP 5 Typ. output characteristic ID = f (VDS); Tj=25°C parameter: tp = 80 µs 0 1 2 3 4 5 6 7 8 V 10 - VDS A - ID Vgs = -1.8V Vgs = -2V Vgs = -2.4V Vgs = -2.6V Vgs = -3V Vgs = -3.4V Vgs = -3.8V Vgs = -4.5V Vgs = -6V 6 Typ. drain-source on resistance RDS(on) = f (ID) parameter: VGS 0 2 4 6 8 A 11 - ID 0.1 0.2 0.3 Ω 0.5 RDS(on) Vgs = -2V Vgs = - 2.4V Vgs= - 2.6V Vgs = - 3V Vgs= - 3.4V Vgs = - 3.8V Vgs = - 4.5V Vgs= - 5V Vgs = - 6V 7 Typ. transfer characteristics ID= f ( VGS ); |VDS|≥ 2 x |ID| x RDS(on)max parameter: tp = 80 µs - VGS 0.5 1.5 2.5 3.5 A - ID 8 Typ. forward transconductance gfs = f(ID); Tj=25°C parameter: tp = 80 µs 0 0.5 1 1.5 2 2.5 3 3.5 4 A 5 - ID S gfs

2006-12-04Rev 1.3 Page 6 BSV 236SP

9 Drain-source on-resistance

RDS(on) = f(Tj) parameter: ID = -1.5 A, VGS = -4.5 V -60 -20 20 60 100 °C 160 Tj 100 120 140 160 180 200 mΩ 240 RDS(on) typ. 98%

10 Gate threshold voltage

V GS(th) = f (Tj) parameter: VGS = VDS, ID = -8 µA -60 -20 20 60 100 °C 160 Tj 0.2 0.4 0.6 0.8 V 1.4 - VGS(th) typ. 98% 11 Typ. capacitances C = f (V DS) parameter: VGS=0, f=1 MHz 0 5 10 V 20 - VDS 1 10 2 10 3 10 pF C Crss Coss Ciss 12 Forward character. of reverse diode I F = f (VSD) parameter: Tj , tp = 80 µs VSD -2 -10 -1 -10 0 -10 1 -10 A BSV 236SP IF Tj = 25 °C typ Tj = 25 °C (98%) Tj = 150 °C typ Tj = 150 °C (98%)

2006-1 2-04Rev 1.3 Page 7 BSV 236SP 13 Typ. avalanche energy EAS = f (Tj), par.: ID = -1.5 A VDD = -10 V, RGS = 25 Ω 25 50 75 100 °C 150 Tj mJ EAS 14 Typ. gate charge GS| = f (QGate) parameter: ID = -1.5 A pulsed 0 1 2 3 4 5 6 nC 8 |QGate| V - VGS 0.2 VDS max. 0.5 VDS max. 0.8 VDS max.

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj) -60 -20 20 60 100 °C 180 Tj -18 -18.5 -19 -19.5 -20 -20.5 -21 -21.5 -22 -22.5 -23 -23.5 V -24.5 BSV 236SP V(BR)DSS

2006-12-04Rev 1.3 Page 8 BSV 236SP Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.