BST39 DGNJDZ | Alldatasheet
Document overview
- Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
- PDF pages: 3
Technical content
- COLLECTOR 3. EMITTER BST39,BST40 TRANSI STOR (NPN)
FEATURES
APPLICATIONS
z General Purpose Switching and Amplification MARKING BCT40 MAXIMUM RA TINGS (Ta=25℃ unless other wise noted) ELECTRICAL CHARACTERISTICS (Ta=25℃ unless other wise specified) Parameter Symbol Test conditions Min Typ Max Unit BST 39 400 Co llector-base breakdown voltage V(B R)CBO I C= 100µA,IE=0 BST40 300 V BST 39 350 Co llector-emitter breakdown voltage V(B R)CEO IC=1 mA,IB=0 BST40 250 V Emitter-b ase breakdown voltage V( BR)EBO I E= 100µA,IC=0 5 V Co llector cut-off current ICB O V CB= 300V,IE= 0 20 nA Emitter cut-off current IEBO V EB=5 V,IC= 0 100 nA DC cu rrent gain hFE V CE= 10V, IC= 20mA 40 Co llector-emitter saturation voltage VCE (sat) I C= 50mA,IB=4 mA 0.5 V T ransition frequency fT V CE= 10V,IC= 10mA, f=100MHz 70 MHz Co llector output capacitance Cob V CB= 10V, IE=0 , f=1MHz 2 pF Symbol Para meter Value Unit BST 39 400 VCBO Coll ector-Base Voltage BST40 300 V BST 39 350 VCE O Coll ector-Emitter Voltage BST40 250 V VEB O Emitter-Base V oltage 5 V IC Coll ector Current 100 mA PC Coll ector Power Dissipation 500 mW RθJA T hermal Resistance From Junction To Ambient 250 ℃/W Operation Junction and Storage Temperature Range ℃ TJ,Tstg -55~ +150 AT1 AT2 BST39 S OT-89-3L Plastic-Encapsulate Transistors DONGGUAN NANJING ELECTRONICS LTD., 1/3Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
M in Max Min Max A 1.400 1.600 0.055 0.063 b 0.320 0.520 0.013 0.020 b1 0.400 0.580 0.016 0.023 c 0.350 0.440 0.014 0.017 D 4.400 4.600 0.173 0.181 E 2.300 2.600 0.091 0.102 E1 3.940 4.250 0.155 0.167 e L 0.900 1.200 0.035 0.047 Symbol Dimensions In Millimeters Dimensions In Inches 1.550 REF. 0.061 REF. 1.500 TYP. 0.060 TYP. 3.000 TYP. 0.118 TYP. Dongguan Nanjing Electronics Ltd. www.dgnjdz.com
Dongguan Nanjing Electronics Ltd. www.dgnjdz.com