BST23AXX2V UMW | Alldatasheet

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Technical content

Features

PeakPulsePower（tp=8/20μs） PPP 300 Watts LeadSolderingTemperature TL 260(10sec) °C OperatingTemperature TJ -55to+125 °C StorageTemperature TSTG -55to+150 °C UMW R BST23Axx2V

ElectricalParameters(T=25℃) Symbol Parameter IPP MaximumReversePeakPulseCurrent VC ClampingVoltage@ IPP VRWM WorkingPeakReverseVoltage IR MaximumReverse LeakageCurrent @VRWM VBR BreakdownVoltage@ IT IT TestCurrent IF ForwardCurrent VF ForwardVoltage@ IF IR I IF VCVBRVRWM V IT VF IPP ElectricalCharacteristics(T=25℃) BST23A052V Parameter Symbol Conditions Minimum Typical Maximum Units ReverseStand-OffVoltage VRWM 5 V ReverseBreakdownVoltage VBR IT=1mA 6 V ReverseLeakageCurrent IR VRWM=5V,T=25°C 1 μA PeakPulseCurrent IPP tp =8/20μs 18 A ClampingVoltage VC IPP=1A,tp=8/20μs 9.8 V MaximumClampingVoltage VC IPP=18A,tp=8/20μs 16.7 V JunctionCapacitance Cj Pin1to2 VR=0V,f= 1MHz 100 pF JunctionCapacitance Cj Pin1to3andPin2to3 VR=0V,f= 1MHz 150 pFwww.umw-ic.com 2 UTD Semiconductor Co.,Limited UMW R BST23Axx2V

Parameter Symbol Conditions Minimum Typical Maximum Units ReverseStand-OffVoltage VRWM 12 V ReverseBreakdownVoltage VBR IT=1mA 13.3 V ReverseLeakageCurrent IR VRWM=12V,T=25°C 1 μA PeakPulseCurrent IPP tp=8/20μs 12 A ClampingVoltage VC IPP=1A,tp=8/20μs 19 V MaximumClampingVoltage VC IPP=12A,tp=8/20μs 25 V JunctionCapacitance Cj Pin1to2 VR=0V,f=1MHz 30 pF JunctionCapacitance Cj Pin1to3andPin2to3 VR=0V,f=1MHz 50 pF BST23A152V Parameter Symbol Conditions Minimum Typical Maximum Units ReverseStand-OffVoltage VRWM 15 V ReverseBreakdownVoltage VBR IT=1mA 16.7 V ReverseLeakageCurrent IR VRWM=15V,T=25°C 1 μA PeakPulseCurrent IPP tp=8/20μs 10 A ClampingVoltage VC IPP=1A,tp=8/20μs 24 V MaximumClampingVoltage VC IPP=10A,tp=8/20μs 30 V JunctionCapacitance Cj Pin1to2 VR=0V,f=1MHz 25 pF JunctionCapacitance Cj Pin1to3andPin2to3 VR=0V,f=1MHz 40 pF BST23A242V Parameter Symbol Conditions Minimum Typical Maximum Units ReverseStand-OffVoltage VRWM 24 V ReverseBreakdownVoltage VBR IT=1mA 26.7 V ReverseLeakageCurrent IR VRWM=24V,T=25°C 1 μA PeakPulseCurrent IPP tp=8/20μs 5 A ClampingVoltage VC IPP=1A,tp=8/20μs 43 V MaximumClampingVoltage VC IPP=5A,tp=8/20μs 60 V JunctionCapacitance Cj Pin1to2 VR=0V,f=1MHz 20 pF JunctionCapacitance Cj Pin1to3andPin2to3 VR=0V,f=1MHz 30 pFwww.umw-ic.com 3 UTD Semiconductor Co.,Limited UMW R BST23Axx2V

Ppp–PeakPulse Power–Watts BST23A362V Parameter Symbol Conditions Minimum Typical Maximum Units ReverseStand-OffVoltage VRWM 36 V ReverseBreakdownVoltage VBR IT=1mA 40 V ReverseLeakageCurrent IR VRWM=36V,T=25°C 1 μA PeakPulseCurrent IPP tp=8/20μs 4 A ClampingVoltage VC IPP=1A,tp=8/20μs 60 V MaximumClampingVoltage VC IPP=4A,tp=8/20μs 75 V JunctionCapacitance Cj Pin1to2 VR=0V,f=1MHz 20 pF JunctionCapacitance Cj Pin1to3andPin2to3 VR=0V,f=1MHz 26 pF Typical Characteristics 10,000 1,000 100 PeakPulsePowervs.Pulse Time 110 100 Power Derating Curve 0.1 1 10 100 1000 10000 td–Pulse Duration–µs 0 25 50 75 100 125 150 Ambient Temprature-TA(°C) Pulse Waveform ESDPulseWaveform (PerIEC 61000-4-2) 110 100 0 5 10 15 25 30 35 Time(µs) Ref1500mV 10.0ns 300W 8/20µs Waveform %of Rated Power orIPP Waveform Paramters tr=8µs td=20µs e-t td=Ipp/2 Percent of Ippwww.umw-ic.com 4 UTD Semiconductor Co.,Limited UMW R BST23Axx2V

Min. Max. Min. Max. A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 1.800 2.000 0.071 0.079 L L1 0.300 0.500 0.012 0.020 θ 0° 8° 0° 8° 0.550 REF. 0.022 REF. Symbol Dimensions In InchesDimensions In Millimeters 0.950 TYP. 0.037 TYP. Marking

Ordering information

Ordercode Package Baseqty Deliverymode SOT-23 3000 Tape and reel www.umw-ic.com 5 UTD Semiconductor Co.,LimitedUMW BST23A052V UMW R BST23Axx2VUMW BST23A362V SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reel SOT-23 3000 Tape and reelUMW BST23A122V UMW BST23A152V UMW BST23A242V