BSS84L AITSEMI | Alldatasheet

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AiT Semiconductor Inc. www.ait-ic.com BSS84L POWER MOSFET P-CHANNEL 130mA, 50V REV1.1 - JUN 2017 RELEASED, MAR 2019 UPDATED - - 1 - DESCRIPTION FEATURES These miniature surface mount MOSFETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. Typical applications are dc –dc converters, load switching, power management in portable and battery–powered products such as computers, printers, cellular and cordless telephones. The BSS84L is available in SOT-23 Package  Energy Efficient  Available in SOT-23 Package ORDERING INFORMATION PIN DESCRIPTION Package Type Part Number SOT-23 BSS84L Note SPQ: 3,000pcs/Reel AiT provides all RoHS Compliant Products

AiT Semiconductor Inc. www.ait-ic.com BSS84L POWER MOSFET P-CHANNEL 130mA, 50V REV1.1 - JUN 2017 RELEASED, MAR 2019 UPDATED - - 2 - ABSOLUTE MAXIMUM RATINGS TA = 25℃ VDSS, Drain–to–Source Voltage 50Vdc VGS, Gate–to–Source Voltage–Continuous ±20Vdc ID, Drain Current–Continuous @ TA = 25°C IDM, Pulsed Drain Current (tp ≤10μs) 130mA 520mA PD, Total Power Dissipation @ TA = 25°C 225mW TJ, TSTG, Junction and Storage temperature -55°C ~150°C RθJA, Thermal Resistance – Junction–to–Ambient 556°C /W TL, Maximum Lead Temperature for Soldering Purposes, for 10 seconds 260°C Stresses above may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characte ristics are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

AiT Semiconductor Inc. www.ait-ic.com BSS84L POWER MOSFET P-CHANNEL 130mA, 50V REV1.1 - JUN 2017 RELEASED, MAR 2019 UPDATED - - 3 -

ELECTRICAL CHARACTERISTICS

TA = 25℃ Parameter Symbol Conditions Min. Typ. Max. Unit OFF CHARACTERISTICS Drain–to–Source Breakdown Voltage V(BR)DSS VGS=0Vdc, ID=250μAdc 50 - - V Zero Gate Voltage Drain Current IDSS VDS=25Vdc, VGS=0Vdc VDS=50Vdc, VGS=0Vdc VDS=50Vdc, VGS=0Vdc, TJ=125°C 0.1 μA Gate–Body Leakage Current IGSS VGS=±20Vdc, VDS=0Vdc - - ±10 nA ON CHARACTERISTICSNOTE1 Gate–Source Threshold Voltage VGS(th) VDS=VGS, ID=250μAdc 0.8 - 2.0 V Static Drain–to–Source On–Resistance RDS(on) VGS=5.0Vdc, ID=100mAdc - 5.0 10 Ohms Transfer Admittance |yfs| VDS=25Vdc, ID=100mAdc, f=1.0kHz 50 - - mS DYNAMIC CHARACTERISTICS Input Capacitance Ciss VDS=5.0Vdc - 30 - pF Output Capacitance Coss VDS=5.0Vdc - 10 - Transfer Capacitance Crss VDS=5.0Vdc - 5 - SWITCHING CHARACTERISTICSNOTE2 Turn–On Delay Time td(on) VDD=-15Vdc , ID=-2.5Adc, RL=50Ω - 2.5 - ns Rise Time tr - 1 - Turn–Off Delay Time td(off) - 16 - Fall Time tf - 8 - Gate Charge QT - 6000 - pC SOURCE–DRAIN DIODE CHARACTERISTICS Continuous Current IS - - 0.13 A Pulsed Current ISM - - 0.52 A Forward VoltageNOTE2 VSD - 2.5 - V NOTE1: Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2.0%. NOTE2: Switching characteristics are independent of operating junction temperature.

AiT Semiconductor Inc. www.ait-ic.com BSS84L POWER MOSFET P-CHANNEL 130mA, 50V REV1.1 - JUN 2017 RELEASED, MAR 2019 UPDATED - - 5 -

PACKAGE INFORMATION

Dimension in SOT-23 Package (Unit: mm) DIM INCHES MILLIMETERS MIN MAX MIN MAX A 0.1102 0.1197 2.80 3.04 B 0.0472 0.0551 1.20 1.40 C 0.0350 0.0440 0.89 1.11 D 0.0150 0.0200 0.37 0.50 G 0.0701 0.0807 1.78 2.04 H 0.0005 0.0040 0.013 0.100 J 0.0034 0.0070 0.085 0.177 K 0.0140 0.0285 0.35 0.69 L 0.0350 0.0401 0.89 1.02 S 0.0830 0.1039 2.10 2.64 V 0.0177 0.0236 0.45 0.60

AiT Semiconductor Inc. www.ait-ic.com BSS84L POWER MOSFET P-CHANNEL 130mA, 50V REV1.1 - JUN 2017 RELEASED, MAR 2019 UPDATED - - 6 - IMPORTANT NOTICE AiT Semiconductor Inc. (AiT) reserves the right to make changes to any its product, specifications, to discontinue any integrated circuit product or service without notice, and advises its customers to obtain the latest version of relevant information to verify, before placing orders, that the information being relied on is current. AiT Semiconductor Inc. 's integrated circuit products are not designed, intended, authorized, or warranted to be suitable for use in life support applications, devices or systems or other critical applications. Use of AiT products in such applications is understood to be fully at the risk of the customer. As used herein may involve potential risks of de ath, personal injury, or server property, or environmental damage. In order to minimize risks associated with the cu stomer's applications, the customer should provide adequate design and operating safeguards. AiT Semiconductor Inc . assumes to no liability to customer product design or application support. AiT warrants the performance of its products of the specifications applicable at the time of sale.