BSS84KT GWSEMI | Alldatasheet

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These miniature surface mount MOSF ETs reduce power loss conserve energy, making this device ideal for use in small power management circuitry. FEATURE z Energy Efficient z Low Threshold Voltage z High-speed Switching z Miniature Surface Mount Package Saves Board Space MARKING : 84K MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -50 V Gate-Source Voltage VGS ±20 V Continuous Drain Current ID -0.13 A Pulsed Drain Current (note 1) @tp <10 μs IDM -0.52 A Power Dissipation PD 225 mW Thermal Resistance from Junction to Ambient (note 2) R θJA 556 ℃/W Junction Temperature TJ 150 ℃ Storage Temperature TSTG -55~+ 150 ℃ Maximum Lead Temperature for Soldering Purposes , Duration for 5 Seconds TL 260 ℃ SOT-523 GATE SOUR CE DRAIN V(BR)DSS RDS(on)MAX ID -50V 8Ω@-10V -0.13A 10Ω@-5V SS84KTB P-Channel MOSFET APPLICATION z DC −DC converters,load switching, power management in portable and battery−powered products such as computers, printers, cellular and cordless telephones.

MOSFET ELECTRICAL CHARACTERISTICS aT =25 ℃ unless otherwise specified Parameter Symbol Test Condition Min Typ Max Unit STATIC CHARACTERISTICS Drain-source breakdown voltage V (BR)DSS VGS = 0V, ID =-250µA -50 V VDS =-50V,VGS = 0V -15 µA Zero gate voltage drain current IDSS VDS =-25V,VGS = 0V -0.1 µA Gate-body leakage current IGSS VGS =±20V, VDS = 0V µA Gate threshold voltage (note 3) V GS(th) VDS =VGS, ID =-250µA -0.9 -2 V VGS =-5V, ID =-0.1A 10 Ω Drain-source on-resistance (note 3) R DS(on) VGS =-10V, ID =-0.1A 8 Ω Forward transconductance (note 1) g FS V DS=-25V; ID=-100mA 50 mS DYNAMIC CHARACTERISTICS (note 4) Input capacitance Ciss 30 pF Output capacitance Coss 10 pF Reverse transfer capacitance Crss VDS =5V,VGS =0V,f =1MHz 5 pF SWITCHING CHARACTERISTICS (note 4) Turn-on delay time td(on) 2.5 ns Turn-on rise time tr 1 ns Turn-off delay time td(off) 16 ns Turn-off fall time tf VDD=-15V, RL=50Ω, ID =-2.5A 8 ns SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Current IS -0.13 A Pulsed Current ISM -0.52 A Diode forward voltage (note 3) V SD I S=-0.13A, VGS = 0V -2.2 V Notes : 1. Repetitive rating : Pulse width limited by junction temperature. 2. Surface mounted on FR4 board , t≤10s. 3. Pulse Test : Pulse Width≤300µs, Duty Cycle≤2%. 4. Guaranteed by design, not subject to producting. SS84KTB P-Channel MOSFET ±810

-0.01 -0.1 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -50 -100 -150 -200 -250 -300 -350 -400 -0.0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 25 50 75 100 125 -0.8 -1.0 -1.2 -1.4 -1.6 -1.8 -2.0 -2.2 Ta=100℃ VSDIS — — Ta=25℃ SOURCE CURRENT IS (A) SOURCE TO DRAIN VOLTAGE VSD (V) VGS=-10V VGS=-6V VGS=-4.5V VGS=-4V VGS=-3V Output Characteristics VGS=-2.5V DRAIN CURRENT ID (A) DRAIN TO SOURCE VOLTAGE VDS (V) VGS=-10V VGS=-5V Ta=25℃ Pulsed ON-RESISTANCE RDS(ON) () DRAIN CURRENT ID (mA) ID——RDS(ON) Ta=100℃ ID=-0.1A Ta=25℃ ON-RESISTANCE RDS(ON) () GATE TO SOURCE VOLTAGE VGS (V) VGS——RDS(ON) VDS=-10V DRAIN CURRENT ID (A) GATE TO SOURCE VOLTAGE VGS (V) Transfer Characteristics Ta=100℃Ta=25℃ ID=-250uA Threshold Voltage THRESHOLD VOLTAGE VTH (V) JUNCTION TEMPERATURE TJ ( )℃

Plastic surface mounted package; 3 leads SOT-523 PACKAGE OUTLINE SS84KTB P-Channel MOSFET Min. Max. Min. Max. A 0.700 0.900 0.028 0.035 A1 0.000 0.100 0.000 0.004 A2 0.700 0.800 0.028 0.031 b1 0.150 0.250 0.006 0.010 b2 0.250 0.350 0.010 0.014 c 0.100 0.200 0.004 0.008 D 1.500 1.700 0.059 0.067 E 0.700 0.900 0.028 0.035 E1 1.450 1.750 0.057 0.069 e e1 0.900 1.100 0.035 0.043 L L1 0.260 0.460 0.010 0.018 θ 0° 8° 0° 8° 0.400 REF. 0.016 REF. Symbol Dimensions In Millimeters Dimensions In Inches 0.500 TYP. 0.020 TYP.