BSS84ES MULTICOMP | Alldatasheet

Document overview

  • Manufacturer or author: Provided By alldatasheet.com(free datasheet download site)
  • PDF pages: 5

Technical content

Features

  • Low on-resistance
  • High-speed switching
  • Drive circuits can be simple
  • Parallel use is easy
  • ESD protected gate up to 2KV HBM Typical Applications
  • P-channel enhancement mode effect transistor
  • Switching application Mechanical Data
  • Case: SOT-23
  • Molding Compound: UL Flammability Classification Rating 94V-0
  • Terminals: Matte tin-plated leads; solderability-per MIL-STD-202, Method 208 Maximum Ratings (@TA=25°C unless otherwise specified) Parameter Symbol Value Units Drain-to-Source Voltage VDSS -50 V Gate-to-Source Voltage VGSS ±20 Continuous Drain Current ID -130 mA Pulsed Drain Current *4 IDM -520 Thermal Characteristics Parameter Symbol Value Unit Power Dissipation *1 SOT-23 PD 0.36 W Thermal Resistance Junction-to-Air *1 RθJA 347 °C/W Thermal Resistance Junction-to-Lead *1 RθJL 208 °C/W Thermal Resistance Junction-to-Case *1 RθJC 175 °C/W Operating Junction Temperature Range TJ -55 to +150 °C Storage Temperature Range TSTG -55 to +150 °C D G S

Page <2> V1.012/10/22 MOSFET Single, P-Ch Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Notes: 1. Surface mounted on FR4 board, and standard footprint, t ≤ 10 sec 2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2% 3. Guaranteed by design, not subject to production 4. Pulse width limited by maximum junction temperature Electrical Characteristics (@TA=25°C unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Unit Static Characteristics VDSS Drain-Source Breakdown Voltage VGS = 0V, ID = -250μA -50 - - V IDSS Zero Gate Voltage Drain Current VDS = -50V, VGS = 0V - - -1 μA IGSS Gate-Body Leakage Current VGS = ±20V, VDS = 0V - - ±10 μA On Characteristics *2 RDS(ON) Static Drain-Source On-resistance Ω VGS = -10V, ID = -0.13A - 2 6 VGS(TH) Gate Threshold Voltage VDS = VGS, ID = -250μA -1 -1.5 -2 V Dynamic Characteristics *3 CISS Input Capacitance VGS = 0V VDS = -20V f = 1.0MHz - 53 - pFCOSS Output Capacitance - 11 - CRSS Reverse Transfer Capacitance - 5 - RG Gate Resistance f = 1.0MHz, VGS = 0V - 721 - Ω Switching Characteristics td(ON) Turn-on Delay Time VDS = -15V RL = -50Ω ID = -2.5A - 2.5 - ns tr Turn-on Rise Time - 1 - td(OFF) Turn-Off Delay Time - 16 - tf Turn-Off Fall Time - 8 - QG Total Gate-Charge VDS = -25V VGS = -4.5V ID = -0.2A - 2.5 - nCQGS Gate to Source Charge - 0.83 - QGD Gate to Drain (Miller) Charge - 0.82 - Source-Drain Diode Characteristics VSD Diode Forward Voltage *2 IS = -0.26A, VGS = 0 V - -0.9 -1.4 V IS Continuous Source Current TC = 25°C - - -0.13 A ISM Pulsed Source Current TC = 25°C - - -0.52 A

Page <3> V1.012/10/22 MOSFET Single, P-Ch Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Ratings and Characteristic Curves (TA=25°C unless otherwise noted)

Page <4> V1.012/10/22 MOSFET Single, P-Ch Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro

Page <5> V1.012/10/22 MOSFET Single, P-Ch Newark.com/multicomp-pro Farnell.com/multicomp-pro sg.element14.com/b/multicomp-pro Important Notice : This data sheet and its contents (the “Information”) belong to the members of the AVNET group of companies (the “Group”) or are licensed to it. No licence is granted for the use of it other than for information purposes in connection with the products to which it relates. No licence of any intellectual property rights is granted. The Information is subject to change without notice and replaces all data sheets previously supplied. The Information supplied is believed to be accurate but the Group assumes no responsibility for its accuracy or completeness, any error in or omission from it or for any use made of it. Users of this data sheet should check for themselves the Information and the suitability of the products for their purpose and not make any assumptions based on information included or omitted. Liability for loss or damage resulting from any reliance on the Information or use of it (including liability resulting from negligence or where the Group was aware of the possibility of such loss or damage arising) is excluded. This will not operate to limit or restrict the Group’s liability for death or personal injury resulting from its negligence. Multicomp Pro is the registered trademark of Premier Farnell Limited 2019. Part Number Table Description Part Number MOSFET, Single, P-Channel, Enhancement Mode, -50V, -130mA, 0.36W, SOT-23 BSS84ES Package Outline Dimensions Mounting Pad Layout Dimensions : Millimetres SOT-23