BSS84DW PANJIT | Alldatasheet

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DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

FEATURES

APPLICATIONS

This device contains two electrically-isolated P-channel, enhancement-mode MOSFETs, housed in a very small SOT-363 (SC70-6L) package. This device is ideal for portable applications where board space is at a premium. Low On-Resistance Available in lead-free plating (100% matte tin finish) Low Gate Threshold Voltage Fast Switching Switching Power Supplies Hand-Held Computers, PDAs Drain-Source Voltage Drain-Gate Voltage (Note 1) Gate-Source Voltage Drain Current Total Power Dissipation (Note 2) Operating Junction Temperature Range Storage Temperature Range 8/12/2005 Page 1 www.panjit.com - 50 V V- 50 V± 20 mA130 200 mW °C-55 to +150 °C-55 to +150 V V V I P T T DSS DGR GSS D D stg T = 25°C Unless otherwise noted J J Note 2. FR-5 board 1.0 x 0.75 x 0.062 inch with minimum recommended pad layout SOT- 363 THERMAL CHARACTERISTICS Characteristic Symbol Units thjaThermal Resistance, Junction to Ambient (Note 2) 625 Value R °C/W 123 654 Note 1. R < 20K ohmsGS MARKING CODE: S84

DSV = -25V, I = -0.1A DSGSV = ±20V, V = 0V www.panjit.com8/12/2005 Page 2 Electrical Characteristics (Each Device) Parameter Symbol Min Units Drain-Source Breakdown Voltage T = 25°C Unless otherwise noted Conditions Typ Max BVDSS DI = -250µA, V = 0V Zero Gate Voltage Drain Current I DSS V = -50V, V = 0V, T =25°CDS Gate-Body Leakage -50 - - V - - -15 - - -60 µA - ±10 nA- BSS84DW -0.1-- OFF CHARACTERISTICS (Note 3) I GSS DS DS GS GS GS J J J J D Parameter Symbol Min Units Gate Threshold Voltage Conditions Typ Max VGS(th) DSV = V , I = -1mA Forward Transconductance -0.8 -1.44 -2.0 V ON CHARACTERISTICS (Note 3) gFS GS D 0.05 - - S Static Drain-Source On-ResistanceRDS(ON) GSV = -5V, I = -0.1A - 3.8 10 OhmsD Parameter Symbol Min Units Input Capacitance Conditions Typ Max Ciss Reverse Transfer Capacitance - - 45 pF DYNAMIC CHARACTERISTICS Crss - -1 2 p F Output Capacitance Coss DSV = -25V, V = 0V, f = 1.0MHz - - 25 pFGS Parameter Symbol Min Units Turn-On Delay Time Conditions Typ Max t D(ON) - 7.5 - ns SWITCHING CHARACTERISTICS Turn-Off Delay Time - 25 - ns t D(OFF) R = 50ohm, V = -10V DD D GEN GS Note 3. Short duration test pulse used to minimize self-heating GS

0.01 0.1 -VSD - Source-to-Drain Voltage (V) -IS - Source Current (A) 25oC VGS = 0V 0.8 0.9 1.1 1.2 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature ( oC) VGS Threshold Voltage (NORMALIZE D ID =250µA 2468 1 0 -VGS - Gate-to-Source Voltage (V) RDS(ON) - On-Resistance (Ohms ) Ids=-50mA Ids=-500mA 0 0.2 0.4 0.6 0.8 1 -ID - Drain Current (A) RDS(ON) - On-Resistance (Ohms ) VGS = 4.5V VGS=10.0V 0.2 0.4 0.6 0.8 01234567 GS - Gate-to-Source Voltage (V) -ID - Drain Source Current (A) VDS =10V 25oC 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 012345 -VDS - Drain-to-Source Voltage (V) -ID - Drain-to-Source Current (A ) VGS= 6V, 7V, 8V, 9V, 10V 3.0V 4.0V 5.0V Electrical Characteristic Curves (Each Device) T = 25°C Unless otherwise notedJ Fig. 1. Output Characteristics Fig. 2. Transfer Characteristics www.panjit.com8/12/2005 Page 3

www.panjit.com8/12/2005 Page 4 BSS84DW

ORDERING INFORMATION

BSS84DW T/R7 - 7 inch reel, 3K units per reel BSS84DW T/R13 - 13 inch reel, 10K units per reel Copyright PanJit International, Inc 2005 The information presented in this document is believed to be accurate and reliable. The specifications and information herein are subject to change without notice. Pan Jit makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. Pan Jit products are not authorized for use in life support devices or systems. Pan Jit does not convey any license under its patent rights or rights of others. PACKAGE LAYOUT AND SUGGESTED PAD DIMENSIONS