BSS8402DW LUGUANG | Alldatasheet
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Technical content
Complementary Pair Enhancement Mode Field Effect Transistor BSS8402DW
FEATURES
z Low On-Resistance . z Low Gate Threshold Voltage. z Low Input Capacitance. z Fast Switching Speed. z Low Input/Output Leakage. z C o m p l e m e n t a r y P a i r . SOT-363
ORDERING INFORMATION
T ype No. Marking Package Code BSS8402DW KNP SOT-363 MAXIMUM RATING – Total Device @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units PD Power Dissipation 200 mW RθJA Thermal resistance,Junction-to-Ambient 625 ℃/W TJ, Tstg Junction and Storage Temperature -55 to +150 ℃ Maximum Ratings N-CHANNEL –Q1, 2N7002 Section @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage 60 V VDGR Drain-Gate voltage(RGS≤1.0MΩ) 60 V VGSS Gate -Source voltage continuous P u l s e d ±20 ±40 V ID Drain current continuous continuous@100 ℃ P u l s e d 115 800 mA http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1
Complementary Pair Enhancement Mode Field Effect Transistor Maximum Ratings N-CHANNEL –Q2, BSS84 Section @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VDSS Drain-Source voltage -50 V VDGR Drain-Gate voltage(RGS≤1.0MΩ) -50 V VGSS Gate -Source voltage continuous ±20 V ID Drain current continuous -130 mA ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Q1,2N7002 Section Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=10μA 60 70 - Gate Threshold Voltage VGS(th) VDS=VGS, ID=250μA 1 - 2.5 V Gate-body Leakage Forward R e v e r s e IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 nA VDS=60V, VGS=0V - - 1 Zero Gate Voltage Drain Current I DSS VDS=60V,VGS=0V,Tj=125℃ - - 500 μA On-state Drain Current ID(On) VGS=10V, VDS=7.5V 0.5 1.0 - A Drain-Source on-voltage V DS(ON) VGS=10V,ID=500mA VGS=5V,ID=50mA 0.6 0.09 3.75 1.5 V Forward transconductance g FS VDS=10V,ID=200mA 80 - - mS Static drain-Source on-resistance R DS(ON) VGS=5.0V,ID=50mA VGS=10V,ID=500mA, Tj=125℃ 3.2 4.4 7.5 13.5 Ω Input capacitance CISS - 22 50 Output capacitance COSS - 11 25 Reverse transfer capacitance C RSS VDS=25V,VGS=0V,f=1.0MHz - 2 5 pF Turn-On Delay Time tD(ON) - 7 20 ns Turn-Off Delay Time tD(OFF) VDD = 30V, ID= 0.2A, RL = 150Ω, VGS= 10V, RGEN= 25Ω - 11 20 ns http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1 BSS8402DW
Complementary Pair Enhancement Mode Field Effect Transistor ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Q2,BSS84 Section Parameter Symbol Test conditions MIN TYP MAX UNIT Drain-Source Breakdown Voltage V (BR)DSS VGS=0V,ID=-250μA -50 - - Gate Threshold Voltage VGS(th) VDS=VGS, ID=-1mA -0.8 - -2 V Gate-body Leakage Forward R e v e r s e IGSS VDS=0V, VGS=20V VDS=0V, VGS=-20V 100 -100 nA VDS=-50V, VGS=0V,Tj=25℃ - - -15 VDS=-50V, VGS=0V,Tj=125℃ - - -60 Zero Gate Voltage Drain Current I DSS VDS=-25V,VGS=0V,Tj=25℃ - - -100 nA Forward transconductance g FS VDS=-25V,ID=-0.1A 0.05 - - S Static drain-Source on-resistance R DS(ON) VGS=-5V,ID=-0.1A - - 10 Ω On-state drain current ID(ON) VGS=10V,VDS=7.5V 0.5 1.0 - A Input capacitance CISS - - 45 Output capacitance COSS - - 25 Reverse transfer capacitance C RSS VDS=-25V,VGS=0V,f=1.0MHz - - 12 pF Turn-On Delay Time tD(ON) - 10 - ns Turn-Off Delay Time tD(OFF) VDD =-30V, ID=-0.27A, VGS=-10V,RGEN= 50Ω - 18 - ns TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1 BSS8402DW
Complementary Pair Enhancement Mode Field Effect Transistor http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1 BSS8402DW
Complementary Pair Enhancement Mode Field Effect Transistor http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1 BSS8402DW
Complementary Pair Enhancement Mode Field Effect Transistor PACKAGE OUTLINE Plastic surface mounted package SOT-363 SOLDERING FOOTPRINT Unit : mm
PACKAGE INFORMATION
A 2.00 2.20 B 1.15 1.35 C 0.95 Typical D 0.25 Typical E 0.25 0.40 G 0.60 0.70 H 0.02 0.10 J 0.10 Typical K 2.2 2.4 All Dimensions in mm Device Package Shipping BSS8402DW SOT-363 3000/Tape&Reel 0.50 0.40 1.90 0.650.65 A B C D E G K J H http://www.lgesemi .com mail:lge@lgesemi.comRevision:20170701-P1 BSS8402DW