BSS84 YANGJIE | Alldatasheet
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Technical content
Yangzhou Yangjie Electronic Technology Co., Ltd. S-S2050 Rev.20,25-Dec-18 www.21yangjie.com P-Channel Enhancement Mode Field Effect Transistor Product Summary
- VDS -60 V
- ID -0.17 A
- RDS(ON)( at VGS=-10V) ＜8 ohm
- RDS(ON)( at VGS=-4.5V) ＜10 ohm General Description
- Trench Power LV MOSFET technology
- Low RDS(ON)
- Low Gate Charge
Applications
- Video monitor
- Power management ■ Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Maximum Unit Drain-source Voltage VDS -60 V Gate-source Voltage VGS ±20 V Drain Current TA=25℃ @ Steady State ID -0.17 A TA=70℃ @ Steady State -0.14 Pulsed Drain Current A IDM -0.68 A Total Power Dissipation @ TA=25℃ PD 225 mW Thermal Resistance Junction-to-Ambient B RθJA 556 ℃/ W Junction and Storage Temperature Range TJ ,TSTG -55～+150 ℃ ■ Ordering Information (Example) PREFERED P/N PACKING CODE Marking MINIMUM PACKAGE(pcs) INNER BOX QUANTITY(pcs) OUTER CARTON QUANTITY(pcs) DELIVERY MODE BSS84 F2 B84. 3000 30000 120000 7“ reel COMPLIANT RoHS
Yangzhou Yangjie Electronic Technology Co., Ltd. S-S2050 Rev.20,25-Dec-18 www.21yangjie.com ■ Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Typ Max Units Static Parameter Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -60 V Zero Gate Voltage Drain Current IDSS VDS=-60V,VGS=0V,TC=25℃ -1 μA Gate-Body Leakage Current IGSS VGS= ±20V, VDS=0V ±100 nA Gate Threshold Voltage VGS(th) VDS= VGS, ID=-250μA -0.9 -1.4 -2.0 V Static Drain-Source On-Resistance RDS(ON) VGS= -10V, ID=-0.15A 3.3 8 Ω VGS= -4.5V, ID=-0.15A 3.5 10 Diode Forward Voltage VSD IS=-0.17A,VGS=0V -1.2 V Maximum Body-Diode Continuous Current IS -0.17 A Dynamic Parameters Input Capacitance Ciss VDS=-30V,VGS=0V,f=1MHZ pF Output Capacitance Coss 10 Reverse Transfer Capacitance Crss 5 Switching Parameters Turn-on Delay Time tD(on) VGS=-4.5V, VDD=-30V, ID=-0.15A, RGEN=2.5Ω 2.5 ns Turn-on Rise Time tr 1 Turn-off Delay Time tD(off) 16 Turn-off Fall Time tf 8 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch.
Yangzhou Yangjie Electronic Technology Co., Ltd. S-S2050 Rev.20,25-Dec-18 www.21yangjie.com ■ Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Drain-Source on Resistance Figure4. Drain-Source on Resistance Figure5. Diode Forward Voltage vs. current Figure6. Gate Threshold vs. Junction Temperature
Yangzhou Yangjie Electronic Technology Co., Ltd. S-S2050 Rev.20,25-Dec-18 www.21yangjie.com ■ SOT-23 Package information ■ SOT-23 Suggested Pad Layout
Yangzhou Yangjie Electronic Technology Co., Ltd. S-S2050 Rev.20,25-Dec-18 www.21yangjie.com Disclaimer The information prese nted in this document is for reference only. Yangzhou Yangjie Electronic Technology Co., Ltd. reserves the right to make changes without notice for the specification of the products displayed herein to improve reliability, function or design or otherwise. The product listed herein is designed to be used with ordinary electronic equipment or devices, and not designed to be used w ith equipment or devices which require high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear -reactor controllers, fuel controllers and other safety devices), Yangjie or anyone on its behalf, assumes no responsibility or liability for any damages resulting from su ch improper use of sale. This publication supersedes & replaces all information previously supplied. For additional information, please visit our website http:// www.21yangjie.com , or consult your nearest Yangjie’s sales office for further assistance.