BSS84 WEITRON | Alldatasheet

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http://www.weitron.com.tw BSS84 Rating Symbol Value Unite VDSS VGS ID IDM PD R JA Operating Junction and Storage Temperature Range TJ, Tstg -55 to 150 C V V mA mA mW C/W Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TA=25 C) Pulsed Drain Current(tp 10us) Power Dissipation (TA=25 C) Maximax Junction-to-Ambient Maximum Ratings (TA=25 C Unless Otherwise Specified) Device Marking BSS84=PD Small Signal MOSFET P-Channel GATE SOURCE DRAIN SOT-23 3Features: *Low On-Resistance : 10 *Low Input Capacitance: 30PF *Low Out put Capacitance : 10PF *Low Threshole : 2.0V *Fast Switching Speed : 2.5ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. 130 520 225 556

http://www.weitron.com.tw BSS84 Input Capacitance VDS=5V, VGS=0V, f=1MHZ Output Capacitance VDS=5V, VGS=0V, f=1MHZ Reverse Transfer Capacitance VDS=5V, VGS=0V, f=1MHZ Drain-Source Breakdown Voltage VGS=0V, ID=250 uA Gate-Source Threshold Voltage VDS=VGS, ID=1.0 mA Gate-Source Leakage Current VDS=0V, VGS= 20V Drain-Source On-Resistance VGS=5.0V, ID=100mA Forward Transconductance VDS=25V, ID=100mA, f=1.0KHZ Static Dynamic Switching (2) Characteristic Symbol UnitMin Typ Max V(BR)DSS VGS (th) rDS (on) IGSS IDSS gfs Ciss Coss Crss td(on) td(off ) 50 - V 0.8 - 2.0 V - -- - - 0.1 60 uA uA mS 5.0 5.0 PF 8.0 2.5 6000 nS nS 1.0 Electrical Characteristics (TA=25 C Unless otherwise noted) Zero Gate Voltage Drain Current VDS=25V, VGS=0V VDS=50V, VGS=0V 50 - - - - - Turn-On Time Turn-Off Time (1) + + Rise Time V =-15V, I =-2.5A, R =50DD D L V =-15V, I =-2.5A, R =50DD D L V =-15V, I =-2.5A, R =50DD D L V =-15V, I =-2.5A, R =50DD D L t tFall Time f QT r Gate Charge PC Source-Drain Diode Characteristics Continuous Current Pulsed Current Forward Voltage(2) IS ISM VSD 0.130 0.520 A V Note: 1. Pulse Test : PW 300us, Duty Cycle 2%. 2. Switching Time is Essentially Independent of Operating Temperature.

http://www.weitron.com.tw TYPICAL ELECTRICAL CHARACTERISTICS 0.3 0.4 0.1 0.6 0.2 FIG1. Transfer Characteristics 1 1.5 2 2.5 3 I D, DRAIN CURRENT (AM PS) VGS, GATE- TO- SOURCE VOLTAGE (VOLTS) FIG2. On-Region Characteristics VDS = 10 V 150 C 25 C - 55 C 0 2 4 10 0.15 0.2 VDS, DRAIN- TO- SOURCE VOLTAGE (VOLTS) I D, DRAIN CURRENT (AM PS) 0.05 0.3 0.1 3.5 0.5 0.25 1 3 95 7 3.25 V 2.75 V 2.25 V 2.5 V 3.0 V VGS = 3.5 V 0.35 0.4 0.5

0.45 TJ = 25 C

RDS(on), DRAIN- TO- SOURCE RESISTANCE (OHMS) FIG3. On-Resistance versus Drain Current 0 0.2 0.4 0.6 FIG4. On-Resistance versus Drain Current ID, DRAIN CURRENT (AM PS) 25 C VGS = 4.5 V RDS(on), DRAIN- TO- SOURCE RESISTANCE (OHMS) 0 0.2 0.4 0.6 ID, DRAIN CURRENT (AM PS) VGS = 10 V 0.1 0.3 0.5 150 C - 55 C 4.5 5.5 3.5 2.5 6.5 0.1 0.3 0.5 150 C 25 C - 55 C BSS84

http://www.weitron.com.tw RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) FIG5. On-Resistance Variation with Temperature 0.001 0.1 TJ, JUNCTION TEMPERATURE ( C) FIG6. Gate Charge VSD, DIODE FORWARD VOLTAGE (VOLTS) FIG7. Body Diode Forward Voltage ID, DIODE CURRENT (AMPS) VGS = 10 V ID = 0.52 A -55 -5 45 95 145 TJ = 150 C 0.6 0.8 0 0.5 1.0 1.5 0.01 -55 C25 C 2.0 VGS, GATE-T O-SOURCE VOLTAGE (VOLTS) QT, TOTAL GATE CHARGE (pC) 500 VDS = 40 V TJ = 25 C 1000 ID = 0.5 A 1500 1.2 1.4 1.6 1.8 VGS = 4.5 V ID = 0.13 A 2000 2.5 3.0 BSS84