BSS84 TGS | Alldatasheet
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Technical content
0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 2.4+0.1 -0.1 1.3+0.1 -0.1 0-0.1 0.38+0.1 -0.1 0.97+0.1 -0.1 0.55 0.4 1.Base 2.Emitter 3.collector 1 2 Unit: mmSOT-23 0.1+0.05 -0.01 1. Gate 2. Source 3. Drain P-Channel Enhancement Mode MOSFET BSS84 ■ Features
- VDS (V) = -50V
- ID = -0.13 A
- RDS(ON) ≤ 10Ω (VGS = -5V) ■ Absolute Maximum Ratings Ta = 25℃ unless otherwise specified Parameter Symbol Rating Unit Drain-Source Voltage VDSS -50 V Gate-Source Voltage VGSS ±20 V Drain Current * – Continuous -130 – Pulsed -520 Total Power Dissipation * Pd 300 mW Thermal Resistance, Junction to Ambient RθJA 417 ℃/W Operating and Storage Temperature Range Tj, TSTG -55 to +150 ℃ * Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; ID mA ■ Electrical Characteristics Ta = 25℃ unless otherwise specified Parameter Symbol Test conditons Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS = 0V, ID = -250μA -50 V VDS = -50V, VGS = 0V, TJ = 25℃ -15 μA VDS = -50V, VGS = 0V, TJ = 125℃ -60 μA Gate-Body Leakage IGSS VGS = ±20V, VDS = 0V ±10 nA Gate Threshold Voltage VGS(th) VDS = VGS, ID = -1mA -0.8 -2.0 V Static Drain-Source On-Resistance RDS (ON) VGS = -5V, ID = -100mA 10 Ω Forward Transconductance gFS VDS = -25V, ID = -0.1A 0.05 S Input Capacitance Ciss 45 pF Output Capacitance Coss 25 pF Reverse Transfer Capacitance Crss 12 pF Turn-On Delay Time tD(ON) VDD = -30V, ID = -0.27A, 10 ns Turn-Off Delay Time tD(OFF) RGEN = 50Ω, VGS = -10V 18 ns IDSSZero Gate Voltage Drain Current VDS = -25V, VGS = 0V,f = 1.0MHz TIGER ELECTRONIC CO.,LTD